Abstract: A semiconductor device includes first nanostructures vertically separated from one another, a first gate structure wrapping around each of the first nanostructures, and second nanostructures vertically separated from one another. The semiconductor device also includes a second gate structure wrapping around the second nanostructures, a first drain/source structure coupled to a first end of the first nanostructures, a second drain/source structure coupled to both of a second end of the first nanostructures and a first end of the second nanostructures, and a third drain/source structure coupled to a second end of the second nanostructures. The first drain/source structure has a first doping type, the second and third drain/source structures have a second doping type, and the first doping type is opposite to the second doping type.

Abstract: An embodiment a device package includes a semiconductor die, a molding compound extending along sidewalls of the semiconductor die, and a planarizing polymer layer over the molding compound and extending along the sidewalls of the semiconductor die. The molding compound includes first fillers, and the planarizing polymer layer includes second fillers smaller than the first fillers. The device package further includes one or more fan-out redistribution layers (RDLs) electrically connected to the semiconductor die, wherein the one or more fan-out RDLs extend past edges of the semiconductor die onto a top surface of the planarizing polymer layer.

Abstract: An embodiment a device package includes a semiconductor die, a molding compound extending along sidewalls of the semiconductor die, and a planarizing polymer layer over the molding compound and extending along the sidewalls of the semiconductor die. The molding compound includes first fillers, and the planarizing polymer layer includes second fillers smaller than the first fillers. The device package further includes one or more fan-out redistribution layers (RDLs) electrically connected to the semiconductor die, wherein the one or more fan-out RDLs extend past edges of the semiconductor die onto a top surface of the planarizing polymer layer.

Abstract: A grinding wheel includes a base disk, and a plurality of teeth protruding beyond a surface of the base disk. The plurality of teeth is aligned to an elongated ring encircling a center of the grinding wheel.

Abstract: A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step recess. During a fabrication process of the wafer level package, the step recess helps to reduce the stress on the wafer level package.

Abstract: A grinding wheel includes a base disk, and a plurality of teeth protruding beyond a surface of the base disk. The plurality of teeth is aligned to an elongated ring encircling a center of the grinding wheel.

Abstract: A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step recess. During a fabrication process of the wafer level package, the step recess helps to reduce the stress on the wafer level package.

Abstract: A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step recess. During a fabrication process of the wafer level package, the step recess helps to reduce the stress on the wafer level package.

Abstract: A method includes performing a dicing on a composite wafer including a plurality of dies, wherein the composite wafer is bonded on a carrier when the step of dicing is performed. After the step of dicing, the composite wafer is mounted onto a tape. The carrier is then de-bonded from the composite wafer and the first tape.

Abstract: A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step recess. During a fabrication process of the wafer level package, the step recess helps to reduce the stress on the wafer level package.

Abstract: A method includes performing a dicing on a composite wafer including a plurality of dies, wherein the composite wafer is bonded on a carrier when the step of dicing is performed. After the step of dicing, the composite wafer is mounted onto a tape. The carrier is then de-bonded from the composite wafer and the first tape.

Abstract: A method for manufacturing a chip package includes exposing a ground ring out of encapsulating material in a direct or indirect way and forming a conductive film electrically connected to the ground ring so as to form an EMI shield and prevent external EMI. The present invention also massively forms conductive film for package structure for lowering the complexity and cost of manufacturing processes.