Patents by Inventor Chun I. Hung
Chun I. Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996630Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, and a nonconductive support element. The first radiation element is coupled to a first grounding point on the ground element. The second radiation element has a feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to a second grounding point on the ground element. The third radiation element is adjacent to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are disposed on the nonconductive support element. The second radiation element is at least partially surrounded by the first radiation element. The third radiation element is at least partially surrounded by the second radiation element.Type: GrantFiled: September 2, 2022Date of Patent: May 28, 2024Assignee: QUANTA COMPUTER INC.Inventors: Yu-Chen Zhao, Chung-Ting Hung, Chin-Lung Tsai, Ying-Cong Deng, Kuan-Hsien Lee, Yi-Chih Lo, Kai-Hsiang Chang, Chun-I Cheng, Yan-Cheng Huang
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Patent number: 11996633Abstract: A wearable device includes a ground element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, and a fifth radiation element. The first radiation element has a feeding point, and is coupled to a first grounding point on the ground element. A slot region is surrounded by the first radiation element and the ground element. The second radiation element is coupled to a second grounding point on the ground element. The third radiation element is coupled to the second grounding point. The third radiation element and the second radiation element substantially extend in opposite directions. The fourth radiation element and the fifth radiation element are disposed inside the slot region. An antenna structure is formed by the first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element.Type: GrantFiled: September 6, 2022Date of Patent: May 28, 2024Assignee: QUANTA COMPUTER INC.Inventors: Chun-I Cheng, Chung-Ting Hung, Chin-Lung Tsai, Kuan-Hsien Lee, Yu-Chen Zhao, Kai-Hsiang Chang
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Publication number: 20240170381Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.Type: ApplicationFiled: February 1, 2024Publication date: May 23, 2024Inventors: Chun-Hsien HUANG, Peng-Fu HSU, Yu-Syuan CAI, Min-Hsiu HUNG, Chen-Yuan KAO, Ken-Yu CHANG, Chun-I TSAI, Chia-Han LAI, Chih-Wei CHANG, Ming-Hsing TSAI
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Patent number: 11955329Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.Type: GrantFiled: April 28, 2023Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Wei Chang, Min-Hsiu Hung, Chun-I Tsai, Ken-Yu Chang, Yi-Ying Liu
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Patent number: 11955379Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.Type: GrantFiled: September 15, 2020Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Wen Wu, Chun-I Tsai, Chi-Cheng Hung, Jyh-Cherng Sheu, Yu-Sheng Wang, Ming-Hsing Tsai
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Patent number: 11929314Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.Type: GrantFiled: March 12, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hsien Huang, Peng-Fu Hsu, Yu-Syuan Cai, Min-Hsiu Hung, Chen-Yuan Kao, Ken-Yu Chang, Chun-I Tsai, Chia-Han Lai, Chih-Wei Chang, Ming-Hsing Tsai
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Publication number: 20240079493Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Inventors: GUAN-QI CHEN, CHEN CHI HSIAO, KUN-TSANG CHUANG, FANG YI LIAO, YU SHAN HUNG, CHUN-CHIA CHEN, YU-SHAN HUANG, TUNG-I LIN
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Patent number: 7260965Abstract: A locking device, which mounts a user key (the first key) and a manager key (the second key) separatedly, places a first lock and a second lock unitedly in an outer cylinder. The first lock is opened or rotated by the first key. After the first lock is open, the first key cannot be pulled out of the locking device. If the second lock is open by the second key, the first key can be pulled out together with the second key.Type: GrantFiled: July 11, 2005Date of Patent: August 28, 2007Assignee: Andamiro Co., Ltd.Inventor: Chun I. Hung
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Patent number: 5078762Abstract: It is filter structure for an air-spray gun, which includes a cylinder portion mounted between a push-button switch and the intake port of the air-spray gun. The cylinder portion includes a centrifugal filter, of which the upper end is mounted with a micro-filter chamber closely connected with the inlet of the push-button switch. The lower end of the centrifugal filter is mounted with a filtering cylinder and a water-guide plate. The moisture will be separated from the pressurized air when the pressurized air flows through the centrifugal filter. The moisture separated will flow into a water chamber, and will be drained off through a water-exhausting valve. After the pressurized air passes through the filtering cylinder, impurities in the air will be filtered out of the air, and then the air flows through a micro-filter chamber to separate any moisture from the air so as to let the pressurized air sprayed out of the gun contain no impurities and moisture at all.Type: GrantFiled: March 5, 1990Date of Patent: January 7, 1992Inventor: Chun-I Hung