Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.

Abstract: In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: An object detection method is suitable for a virtual reality system. The object detection method includes a plurality of first cameras of a head-mounted display (HMD) to capture a plurality of first frames. A plurality of second frames are captured through a plurality of second cameras in a tracker, wherein, the object detector searches for the object position in the first frames and the second frames.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: A touch sensitive processing method, comprising: performing capacitance sensing by a touch panel to gather an approximating or touching position of an external conductive object with regard to the touch panel; determining whether the approximating or touching position is within a non-report area, wherein a shape of the non-report area is a circle or an ellipse; when the approximating or touching position is determined outside the non-report area, reporting the approximating or touching position to a host; and when the approximating or touching position is determined inside the non-report area, ignoring the approximating or touching position.

Abstract: In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Abstract: When there is an interruption in power to an area of an integrated circuit manufacturing facility, product may be stranded in a vehicle mounted to an automated material handling system. An automated rescue vehicle can be deployed to retrieve the stranded vehicle so that a payload carried by that vehicle can be recovered and processing can resume. The rescue vehicle can carry a battery payload. The battery payload provides backup power while the rescue operation is performed. With such an automated system, no human intervention is needed to recover product during a power outage. In addition to improving wafer throughput during the power outage, such a rescue operation may prevent quality degradation for time-critical sequences of processing operations.

Abstract: A touch sensitive processing method, comprising: performing capacitance sensing by a touch panel to gather an approximating or touching position of an external conductive object with regard to the touch panel; determining whether the approximating or touching position is within a non-report area, wherein a shape of the non-report area is a circle or an ellipse; when the approximating or touching position is determined outside the non-report area, reporting the approximating or touching position to a host; and when the approximating or touching position is determined inside the non-report area, ignoring the approximating or touching position.

Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Abstract: In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Abstract: A planarization method includes forming a dielectric layer over a polish stop layer. The dielectric layer is polished until reaching the polish stop layer, and the polished dielectric layer has a concave top surface. A compensation layer is formed over the concave top surface. The compensation layer is polished.

Abstract: The disclosure provides a floating touch display device which includes a capacitive touch panel, a display device, an interval layer, and an optical-lens structure. The capacitive touch panel is configured to provide a floating touch surface at a floating height above a first surface. The display device includes a second surface, and the display device is configured to provide a display image from the second surface. The optical-lens structure is disposed between the capacitive touch panel and the display device. The interval layer is disposed between the second surface and the optical-lens structure, and a first optical distance is between the second surface and the optical-lens structure. The optical-lens structure is configured to image the display image on the floating touch surface at a second optical distance, and the first optical distance is equal to the second optical distance.

Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Abstract: In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Abstract: A method for monitoring a transport vehicle is provided. The method includes the operations as follows. A transport vehicle is scanned by a monitor during the transport vehicle is operated on a rail to acquire a vehicle pattern of the transport vehicle. The vehicle pattern of the transport vehicle is analyzed. An abnormal transport vehicle is determined based on the vehicle pattern. The monitor is placed nearby the rail. A method for transport vehicle maintenance is also provided.

Abstract: A touch display device includes a cover plate, a touch module, a frame, and a display module. The touch module is disposed on the cover plate and defines thereon a sensing zone and a peripheral zone connecting each other. The frame is located at a side of the touch module away from the cover plate and includes a plurality of fixing members and an accommodating trough. The fixing members cross the peripheral zone to be fixed to the cover plate. At least one part of the touch module in the peripheral zone is attached to a side of the frame away from the cover plate. The display module is disposed in the accommodating trough and over the sensing zone.