Abstract: This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.

Abstract: A high voltage transistor structure including a substrate, a first isolation structure, a second isolation structure, a gate structure, a first source and drain region, and a second source and drain region is provided. The first isolation structure and the second isolation structure are disposed in the substrate. The gate structure is disposed on the substrate, at least a portion of the first isolation structure, and at least a portion of the second isolation structure. The first source and drain region and the second source and drain region are located in the substrate on two sides of the first isolation structure and the second isolation structure. The depth of the first isolation structure is greater than the depth of the second isolation structure.

Abstract: A power module including at least one power device, an insulation thermally conductive layer, and a heat dissipation device is provided. The insulation thermally conductive layer has a patterned circuit layer. The power device is disposed on the patterned circuit layer and is electrically connected to the patterned circuit layer. The heat dissipation device includes a heat dissipation plate and a heat dissipation base. The heat dissipation plate has a first surface and a second surface opposite to each other, and the insulation thermally conductive layer is disposed on the first surface. The heat dissipation base is partially bonded to the heat dissipation plate, and a chamber is formed between the heat dissipation plate and the heat dissipation bases. The heat dissipation base has a plurality of first heat dissipation bumps located in the chamber.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: This invention discloses a desktop computer and a method for manufacturing the same. The desktop computer includes a display device and a main body. The display device has a display side and a back side. One end of the main body is connected to the back side of the display device. The other end of the main body and the display device contact a surface where the desktop computer is disposed. The angle between the main body and the display device is adjustable.

Abstract: This invention discloses a desktop computer and a method for manufacturing the same. The desktop computer includes a display device and a main body. The display device has a display side and a back side. One end of the main body is connected to the back side of the display device. The other end of the main body and the display device contact a surface where the desktop computer is disposed. The angle between the main body and the display device is adjustable.