Patents by Inventor Chun-Liang A. Chen

Chun-Liang A. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240195451
    Abstract: A method for performing antenna tuning control of a wireless transceiver device in a wireless communications system and associated apparatus are provided.
    Type: Application
    Filed: December 8, 2023
    Publication date: June 13, 2024
    Applicant: MEDIATEK INC.
    Inventors: Yen-Liang Chen, Chun-Hsiang Chen, Po-Chung Hsiao, Kuo-Hao Chen
  • Publication number: 20240174892
    Abstract: This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.
    Type: Application
    Filed: November 21, 2023
    Publication date: May 30, 2024
    Inventors: Ting-Kai Huang, Yannan Liang, Bin Hu, Chun-Fu Chen, Ying-Shen Chuang, Tzu-Wei Chiu, Sung TsaiLin, Hanyu Fan, Hsin-Hsien Lu
  • Publication number: 20240178102
    Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.
    Type: Application
    Filed: April 21, 2023
    Publication date: May 30, 2024
    Inventors: Chun-Ti LU, Hao-Yi TSAI, Chiahung LIU, Ken-Yu CHANG, Tzuan-Horng LIU, Chih-Hao CHANG, Bo-Jiun LIN, Shih-Wei CHEN, Pei-Rong NI, Hsin-Wei HUANG, Zheng GangTsai, Tai-You LIU, Steve SHIH, Yu-Ting HUANG, Steven SONG, Yu-Ching WANG, Tsung-Yuan YU, Hung-Yi KUO, CHung-Shi LIU, Tsung-Hsien CHIANG, Ming Hung TSENG, Yen-Liang LIN, Tzu-Sung HUANG, Chun-Chih CHUANG
  • Patent number: 11994146
    Abstract: A fan device includes a hub and a plurality of fan blades. Each of the fan blades includes a driving surface, and the driving surface includes a first tooth column and a second tooth column. The first tooth column includes a plurality of first skin-tooth units. Each of the first skin-tooth units includes a first body. A first middle ridge and two first side ridges protrude from a surface of the first body, and a groove is formed between two adjacent first skin-tooth units. The second tooth column includes a plurality of second skin-tooth units. Each of the second skin-tooth units includes a second body and an extension element. A second middle ridge and two second side ridges protrude from a surface of the second body, and the extension element is located in the groove and includes an extension rib.
    Type: Grant
    Filed: November 22, 2022
    Date of Patent: May 28, 2024
    Assignee: GIGA-BYTE TECHNOLOGY CO., LTD.
    Inventors: Shun-Chih Huang, Tai-Chuan Mao, Huan-Zhong Chen, Chun-Liang Guo
  • Publication number: 20240161998
    Abstract: A deflecting plate includes a silicon-on-insulator (SOI) substrate. The SOI substrate includes: an insulator layer having a top surface and a bottom surface; a device layer coupled to the insulator layer at the top surface, wherein multiple deflecting apertures are disposed in the device layer, each of which extending from a top open end to a bottom open end through the device layer, and wherein the bottom open end is coplanar with the top surface of the insulator layer; and a handle substrate coupled to the insulator layer at the bottom surface, wherein a cavity is disposed in the handle substrate and extends from a cavity open end to a cavity bottom wall, and wherein the bottom wall is coplanar with the top surface of the insulator layer, such that the bottom open end of each deflecting aperture is exposed to the cavity.
    Type: Application
    Filed: September 10, 2023
    Publication date: May 16, 2024
    Inventors: Cheng-Hsien Chou, Yung-Lung Lin, Chun Liang Chen, Kuan-Liang Liu, Chin-Yu Ku, Jong-Yuh Chang
  • Publication number: 20240145691
    Abstract: The present invention is related to a novel positive electrode active material for lithium-ion battery. The positive electrode active material is expressed by the following formula: Li1.2NixMn0.8-x-yZnyO2, wherein x and y satisfy 0<x?0.8 and 0<y?0.1. In addition, the present invention provides a method of manufacturing the positive electrode active material. The present invention further provides a lithium-ion battery which uses said positive electrode active material.
    Type: Application
    Filed: March 14, 2023
    Publication date: May 2, 2024
    Inventors: CHUAN-PU LIU, YIN-WEI CHENG, SHIH-AN WANG, BO-LIANG PENG, CHUN-HUNG CHEN, JUN-HAN HUANG, YI-CHANG LI
  • Publication number: 20240124844
    Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 18, 2024
    Inventors: Chia-Hsin Lee, Po-Cheng Lin, Yong-Cheng Kao, Ming-Hsi Chuang, Chun-Hung Chen, Chao-Liang Chang, Kai-Ling Zhang
  • Patent number: 11960253
    Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: April 16, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Po-Yu Huang, Chun-Fang Chen, Hong-Chi Ku, Te-Ming Chen, Chien-Liang Lai, Sen-Chia Chang
  • Patent number: 11951091
    Abstract: Disclosed herein is a complex, a contrast agent and the method for treating a disease related to CXCR4 receptor. The complex is configured to bind the CXCR4 receptor, and is used as a medicament for diagnosis and treatment of cancers and other indications related to the CXCR4 receptor.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: April 9, 2024
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C
    Inventors: Chien-Chung Hsia, Chung-Hsin Yeh, Cheng-Liang Peng, Chun-Tang Chen
  • Patent number: 11937932
    Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.
    Type: Grant
    Filed: July 8, 2022
    Date of Patent: March 26, 2024
    Assignees: TAICHUNG VETERANS GENERAL HOSPITAL, TUNGHAI UNIVERSITY
    Inventors: Chieh-Liang Wu, Chun-Te Huang, Cheng-Hsu Chen, Tsai-Jung Wang, Kai-Chih Pai, Chun-Ming Lai, Min-Shian Wang, Ruey-Kai Sheu, Lun-Chi Chen, Yan-Nan Lin, Chien-Lun Liao, Ta-Chun Hung, Chien-Chung Huang, Chia-Tien Hsu, Shang-Feng Tsai
  • Publication number: 20240096867
    Abstract: A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 21, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Charles Chew-Yuen YOUNG, Chih-Liang CHEN, Chih-Ming LAI, Jiann-Tyng TZENG, Shun-Li CHEN, Kam-Tou SIO, Shih-Wei PENG, Chun-Kuang CHEN, Ru-Gun LIU
  • Patent number: 11935947
    Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: March 19, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20240088030
    Abstract: Provided are semiconductor devices that include a first gate structure having a first end cap portion, a second gate structure having a second end cap portion coaxial with the first gate structure, a first dielectric region separating the first end cap portion and the second end cap portion, a first conductive element extending over the first gate structure, a second conductive element extending over the second gate structure, and a gate via electrically connecting the second gate structure and the second conductive element, with the first dielectric region having a first width and being positioned at least partially under the first conductive element and defines a spacing between the gate via and an end of the second end cap portion that exceeds a predetermined distance.
    Type: Application
    Filed: January 23, 2023
    Publication date: March 14, 2024
    Inventors: Chin-Liang CHEN, Chi-Yu LU, Ching-Wei TSAI, Chun-Yuan CHEN, Li-Chun TIEN
  • Publication number: 20240087902
    Abstract: The present disclosure is directed to methods and devices for devices including multiple die. A wafer is received having a plurality of die and a plurality of scribe lines. A dicing process is performed on the wafer. The dicing process includes identifying a first scribe line of the plurality of scribe lines, the first scribe line interposing a first die and a second die of the plurality of die; and performing a partial cut on the first scribe line. In embodiments, other scribe lines of the wafer are, during the dicing process, fully cut. After the dicing, the first die and the second die are mounted on a substrate such as an interposer. The first die and the second die are connected by a portion of the first scribe line, e.g., remaining from the partial cut, during the mounting.
    Type: Application
    Filed: January 19, 2023
    Publication date: March 14, 2024
    Inventors: Chieh-Lung LAI, Meng-Liang LIN, Chun-Yueh YANG, Hsien-Wei CHEN
  • Publication number: 20240079356
    Abstract: An integrated circuit package includes an interposer, the interposer including: a first redistribution layer, a second redistribution layer over the first redistribution layer in a central region of the interposer, a dielectric layer over the first redistribution layer in a periphery of the interposer, the dielectric layer surrounding the second redistribution layer in a top-down view, a third redistribution layer over the second redistribution layer and the dielectric layer, and a first direct via extending through the dielectric layer. A conductive feature of the third redistribution layer is coupled to a conductive feature of the first redistribution layer through the first direct via.
    Type: Application
    Filed: January 9, 2023
    Publication date: March 7, 2024
    Inventors: Hsien-Wei Chen, Chieh-Lung Lai, Meng-Liang Lin, Chun-Yueh Yang, Shin-Puu Jeng
  • Publication number: 20240071815
    Abstract: A method includes depositing a first dielectric layer over a first conductive feature, depositing a first mask layer over the first dielectric layer, and depositing a second mask layer over the first mask layer. A first opening is patterned in the first mask layer and the second mask layer, the first opening having a first width. A second opening is patterned in a bottom surface of the first opening, the second opening extending into the first dielectric layer, the second opening having a second width. The second width is less than the first width. The first opening is extended into the first dielectric layer and the second opening is extended through the first dielectric layer to expose a top surface of the first conductive feature.
    Type: Application
    Filed: October 31, 2023
    Publication date: February 29, 2024
    Inventors: Chun-Kai Chen, Jei Ming Chen, Tze-Liang Lee
  • Publication number: 20230335401
    Abstract: A method is disclosed that includes performing a directional ion implantation process on a developed resist pattern to reduce roughness. A substrate can be tilted at a tilt angle with respect to the direction of an incoming ion beam. Ions can be directionally implanted at the tilt angle, along sidewall surfaces of the developed resist pattern to trim roughness from the sidewall surfaces. After implanting, the substrate can be rotated along the axis normal to a surface, and ions can then be directionally implanted at the tilt angle along the sidewall surfaces to further trim roughness from the sidewall surfaces of the developed resist pattern. The directional ion implantation process can be performed over a number of iterations, and during each iteration of the directional ion implantation process, the tilt angle can be adjusted so that the tilt angle is different than during previous iterations.
    Type: Application
    Filed: April 14, 2022
    Publication date: October 19, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Liang Chen, Wei-Ting Chien, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
  • Publication number: 20230326785
    Abstract: A height adjustable semiconductor wafer support is provided. The height adjustable semiconductor wafer support includes a chuck for supporting a semiconductor wafer, an adjustment mechanism having a top surface for supporting the chuck, and a stage coupled to the adjustment mechanism such that movement of the top surface of the adjustment mechanism relative to the stage changes a distance between the top surface of the adjustment mechanism and a top surface of the stage.
    Type: Application
    Filed: June 15, 2023
    Publication date: October 12, 2023
    Inventors: Ming SHING, Yichi YEN, Chun Liang CHEN, Kuo Lun LO
  • Patent number: 11715665
    Abstract: A height adjustable semiconductor wafer support is provided. The height adjustable semiconductor wafer support includes a chuck for supporting a semiconductor wafer, an adjustment mechanism having a top surface for supporting the chuck, and a stage coupled to the adjustment mechanism such that movement of the top surface of the adjustment mechanism relative to the stage changes a distance between the top surface of the adjustment mechanism and a top surface of the stage.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: August 1, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ming Shing, Yichi Yen, Chun Liang Chen, Kuo Lun Lo
  • Publication number: 20230166297
    Abstract: A probe pin cleaning sheet with cleaning power and a manufacturing method thereof are disclosed, comprising a release layer, a cleaning layer, and a substrate. Thus, in the process that the probe pin pierces the cleaning layer, through the material of cleaning layer, and the cleaning grains of abrasive material contained in the cleaning material in the cleaning layer, the cleaning power is increased to scrape off dirt from the surface of probe pin. In addition, by the negative charges and lipophilic property of the silicone itself, the dirt on the probe pin can be transferred onto the cleaning layer.
    Type: Application
    Filed: May 11, 2022
    Publication date: June 1, 2023
    Inventors: Li-Wen HSU, Chun-Liang CHEN, Chih-Tang LEE