Patents by Inventor Chun Lin Chang
Chun Lin Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20130330938Abstract: A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.Type: ApplicationFiled: August 12, 2013Publication date: December 12, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Zin-Chang WEI, Hsin-Hsien WU, Chun-Lin CHANG
-
Patent number: 8592785Abstract: An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.Type: GrantFiled: September 22, 2011Date of Patent: November 26, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Nai-Han Cheng, Chin-Hsiang Lin, Chi-Ming Yang, Chun-Lin Chang, Chih-Hong Hwang
-
Patent number: 8581204Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.Type: GrantFiled: September 16, 2011Date of Patent: November 12, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Lin Chang, Chih-Hong Hwang, Nai-Han Cheng, Chi-Ming Yang, Chin-Hsiang Lin
-
Publication number: 20130295753Abstract: A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.Type: ApplicationFiled: May 4, 2012Publication date: November 7, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Hong HWANG, Chun-Lin CHANG, Nai-Han CHENG, Chi-Ming YANG, Chin-Hsiang LIN
-
Publication number: 20130280823Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.Type: ApplicationFiled: June 14, 2013Publication date: October 24, 2013Inventors: Chun-Lin Chang, Chih-Hong Hwang, Nai-Han Cheng, Chi-Ming Yang, Chin-Hsiang Lin
-
Publication number: 20130270454Abstract: An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.Type: ApplicationFiled: April 11, 2012Publication date: October 17, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Hong HWANG, Chun-Lin CHANG, Chi-Ming YANG, Chin-Hsiang LIN, Wen-Yu KU
-
Publication number: 20130264498Abstract: An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.Type: ApplicationFiled: April 4, 2012Publication date: October 10, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin CHANG, Chih-Hing HWANG, Wen-Yu KU, Chi-Ming YANG, Chin-Hsiang LIN
-
Patent number: 8536491Abstract: A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers.Type: GrantFiled: March 24, 2009Date of Patent: September 17, 2013Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Zin-Chang Wei, Hsin-Hsien Wu, Chun-Lin Chang
-
Publication number: 20130140987Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.Type: ApplicationFiled: December 1, 2011Publication date: June 6, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Hong Hwang, Chun-Lin Chang, Nai-Han Cheng, Chi-Ming Yang, Chin-Hsiang Lin
-
Publication number: 20130110276Abstract: A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.Type: ApplicationFiled: November 1, 2011Publication date: May 2, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Nai-Han Cheng, Chin-Hsiang Lin, Chi-Ming Yang, Chun-Lin Chang, Chih-Hong Hwang
-
Publication number: 20130075624Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.Type: ApplicationFiled: September 23, 2011Publication date: March 28, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Hong Hwang, Chun-Lin Chang, Nai-Han Cheng, Chi-Ming Yang, Chin-Hsiang Lin
-
Publication number: 20130075623Abstract: An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.Type: ApplicationFiled: September 22, 2011Publication date: March 28, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Nai-Han CHENG, Chin-Hsiang LIN, Chi-Ming YANG, Chun-Lin CHANG, Chih-Hong HWANG
-
Patent number: 8404572Abstract: An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.Type: GrantFiled: February 13, 2009Date of Patent: March 26, 2013Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Chun-Lin Chang, Hsin-Hsien Wu, Zin-Chang Wei, Chi-Ming Yang, Chyi-Shyuan Chern, Jun-Lin Yeh, Jih-Jse Lin, Jo-Fei Wang, Ming-Yu Fan, Jong-I Mou
-
Publication number: 20130068960Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.Type: ApplicationFiled: September 16, 2011Publication date: March 21, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Lin Chang, Chih-Hong Hwang, Nai-Han Cheng, Chi-Ming Yang, Chin-Hsiang Lin
-
Publication number: 20120292629Abstract: A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.Type: ApplicationFiled: May 20, 2011Publication date: November 22, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")Inventors: Hsin-Hsien Wu, Chyi Shyuan Chern, Chun-Lin Chang, Ching-Wen Hsiao, Kuang-Huan Hsu
-
Patent number: 8309444Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.Type: GrantFiled: July 7, 2010Date of Patent: November 13, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Keung Hui, Chun-Lin Chang, Jong-I Mou
-
Patent number: 8294124Abstract: An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.Type: GrantFiled: January 15, 2010Date of Patent: October 23, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Keung Hui, Chun-Lin Chang
-
Publication number: 20120264296Abstract: A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.Type: ApplicationFiled: April 14, 2011Publication date: October 18, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chyi Shyuan CHERN, Hsin-Hsien WU, Chun-Lin CHANG, Hsing-Kuo HSIA, Hung-Yi KUO
-
Publication number: 20120009692Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.Type: ApplicationFiled: July 7, 2010Publication date: January 12, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Keung Hui, Chun-Lin Chang, Jong-I Mou
-
Publication number: 20110174991Abstract: An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.Type: ApplicationFiled: January 15, 2010Publication date: July 21, 2011Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Keung HUI, Chun-Lin CHANG