Abstract: In one embodiment, a polishing composition can comprise abrasive particles including zirconia, an oxidizing agent including hydroxylamine and water. The polishing composition can have a high copper removal rate of at least 3500 ?/min, and a polishing selectivity of copper to silicon dioxide(Cu:SiO2) can be at least 2.5:1. In another embodiment, a combination product can comprise a first polishing composition and a second polishing composition, wherein each of the first polishing composition and the second polishing composition can comprise abrasive particles including zirconia and an oxidizing agent including hydroxylamine, wherein a hydroxylamine weight % ratio of the first polishing composition to the second polishing composition may be at least 5:1.

Abstract: A chemical mechanical polishing (CMP) slurry can comprise a plurality of particles distributed in a carrier, wherein at least a portion of the particles of the plurality of particles can have a body including a core comprising zirconia and a shell overlying at least a portion of the core, wherein the shell comprises silica; an oxidizing agent; and a carrier. The CMP slurry can comprise at least one of a Hydrogen Peroxide Stability % Reduction of not greater than 50%; and a high copper material removal rate.

Abstract: A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.

Abstract: A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.

Abstract: An aqueous coolant fluid for cutting or machining a semiconductor substrate, comprising at least one organic phosphorous containing acid or salt thereof, at least one polyol; and at least one surfactant, and a method of cutting a silicon ingot or wafer using the coolant fluid.