Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A liquid-cooling heat dissipation plate with pin-fins and an enclosed liquid cooler having the same are provided. The liquid-cooling heat dissipation plate includes a heat dissipation plate body, a plurality of rhombus-shaped pin-fins, and a plurality of ellipse-shaped pin-fins. The heat dissipation plate body has a first heat dissipation surface and a second heat dissipation surface opposite to each other. The first heat dissipation surface is in contact with a heat source, and the second heat dissipation surface is in contact with a cooling fluid. The rhombus-shaped pin-fins and the ellipse-shaped pin-fins are integrally formed on the second heat dissipation surface and in a high density arrangement. The ellipse-shaped pin-fins correspond in position to a relative low temperature region of the heat source, and the rhombus-shaped pin-fins correspond in position to a relative high temperature region of the heat source.

Abstract: A memory device includes a main array comprising main memory cells; a redundancy array comprising redundancy memory cells; and write circuitry configured to perform a first programming operation on a main memory cell, to detect whether a current of the main memory cell exceeds a predefined current threshold during the first programming operation, and to disable a second programming operation for a redundancy memory cell if the current of the main memory cell exceeds the predefined current threshold during the first programming operation.

Abstract: A two-phase immersion-type heat dissipation structure having acute-angle notched structures is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins has first and second surfaces defined thereon and connected to each other. An angle between the first surface and the fin surface is from 80 degrees to 100 degrees, and an angle between the second surface and the fin surface is less than 75 degrees.

Abstract: A two-phase immersion-cooling heat-dissipation composite structure is provided. The heat-dissipation composite structure includes a heat dissipation base, a plurality of high-thermal-conductivity fins, and at least one high-porosity solid structure. The heat dissipation base has a first surface and a second surface that face away from each other. The second surface of the heat dissipation base is in contact with a heating element immersed in a two-phase coolant. The first surface of the heat dissipation base is connected to the high-thermal-conductivity fins. The at least one high-porosity solid structure is located at the first surface of the heat dissipation base, and is connected and alternately arranged between side walls of two adjacent ones of the high-thermal-conductivity fins. Each of the high-porosity solid structure includes a plurality of closed holes and a plurality of open holes.

Abstract: A two-phase immersion-type heat dissipation structure having fins for facilitating bubble generation is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the plurality of fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins and the fin surface have an included angle therebetween that is from 80 degrees to 100 degrees. A center line average roughness (Ra) of the side surface is less than 3 ?m, and a ten-point average roughness (Rz) of the side surface is not less than 12 ?m.

Abstract: A two-phase immersion-type heat dissipation structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate and a plurality of non-vertical fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other. The non-fin surface is configured to be in contact with a heating element immersed in a two-phase coolant. The fin surface is connected with the non-vertical fins, a cross-sectional contour of one of the non-vertical fins has a top end point and a bottom end point connected with the fin surface, and the top and bottom end points are opposite to each other. A length of a cross-sectional contour line defined from the top end point to the bottom end point is greater than a perpendicular line length of a perpendicular line defined from the top end point to the fin surface.

Abstract: A two-phase immersion-type heat dissipation structure having a porous structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, a plurality of fins, and a reinforcement frame. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fins are integrally formed on the fin surface. A porous structure is covered onto at least one portion of the fin surface and at least one portion of the plurality of fins, and has a porosity of from 10% to 50% and a thickness that is from 0.1 mm to 1 mm. The reinforcement frame is bonded to the heat dissipation substrate and surrounds another one portion of the plurality of fins.

Abstract: A two-phase immersion-type heat dissipation structure having skived fin with high porosity is provided. The two-phase immersion-type heat dissipation structure having skived fin with high porosity includes a porous heat dissipation structure having a total porosity that is equal to or greater than 5%. The porous heat dissipation structure includes a porous substrate and a plurality of porous and skived fins. The porous substrate has a first surface and a second surface that face away from each other. The second surface of the porous substrate is configured to be in contact with a heating element that is immersed in a two-phase coolant. The plurality of porous and skived fins are integrally formed on the first surface of the porous substrate by skiving. A first porosity of the plurality of porous and skived fins is greater than a second porosity of the porous substrate.

Abstract: A heat dissipation structure having a heat pipe is provided. The heat dissipation structure includes a heat dissipation base, a plurality of fins, at least one heat pipe, and at least a first heat dissipation contact material and a second heat dissipation contact material that are different from one another. The heat dissipation base has a first and a second heat dissipation surface opposite to each other. The second heat dissipation surface is connected to the fins. At least one recessed trough is concavely formed on the first heat dissipation surface. The at least one heat pipe is located in the at least one recessed trough. The first and the second heat dissipation contact material are filled in the at least one recessed trough. A melting point of the second heat dissipation contact material is smaller than a melting point of the first heat dissipation contact material.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A two-phase immersion-type heat dissipation structure having high density heat dissipation fins is provided. The two-phase immersion-type heat dissipation structure having high density heat dissipation fins includes a heat dissipation substrate, a plurality of sheet-like heat dissipation fins, and a reinforcement structure. A bottom surface of the heat dissipation substrate is in contact with a heating element immersed in a two-phase coolant. The plurality of sheet-like heat dissipation fins are integrally formed on an upper surface of the heat dissipation substrate and arranged in high density. An angle between at least one of the sheet-like heat dissipation fins and the upper surface of the heat dissipation substrate is from 60° to 120°. At least one of the sheet-like heat dissipation fins has a length from 50 mm to 120 mm, a width from 0.1 mm to 0.35 mm, and a height from 2 mm to 8 mm.

Abstract: An immersion-type heat dissipation structure having high density heat dissipation fins is provided, which includes a heat dissipation substrate and the plurality of sheet-like heat dissipation fins. A thickness of the heat dissipation substrate is from 2 mm to 6 mm, and a bottom surface of the heat dissipation substrate contacts a heating element immersed in a two-phase coolant. The sheet-like heat dissipation fins are integrally formed on an upper surface of the heat dissipation substrate and arranged in high density. A length, a width, and a height of at least one of the sheet-like heat dissipation fins are from 60 mm to 120 mm, from 0.1 mm to 0.5 mm, and from 3 mm to 10 mm, respectively. Further, a distance between at least two of the sheet-like heat dissipation fins that are arranged in parallel to each other is from 0.1 mm to 0.5 mm.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A memory device includes a main array comprising main memory cells; a redundancy array comprising redundancy memory cells; and write circuitry configured to perform a first programming operation on a main memory cell, to detect whether a current of the main memory cell exceeds a predefined current threshold during the first programming operation, and to disable a second programming operation for a redundancy memory cell if the current of the main memory cell exceeds the predefined current threshold during the first programming operation.

Abstract: It has been established that CD55 expression on human mesenchymal stem cells (hMSCs) is positively correlated with successful allogenic transplantation procedures. Compositions and methods for improved hMSCs, having increased expression of CD55 mRNA and/or increased expression of CD55 on the surface of the cell as compared to a control cell, are provided. Methods include isolating hMSCs from a tissue that naturally has increased CD55 expression, such as adipose tissue derived hMSC (AT-hMSC); and/or in vitro culturing hMSCs in the presence of one or more active agents that stimulates or enhances the expression of CD55 mRNA, and/or increases the surface expression of CD55 in the hMSC to provide improved hMSCs. Preferred active agents include HMG-CoA reductase inhibitors such as atorvastatin and EGFR inhibitors such as erlotinib. Compositions and methods for administering the improved hMSCs to a subject in need thereof are also provided.

Abstract: A thin heat pipe structure includes a main body having a chamber. The chamber has a wick structure and a working fluid provided therein, and internally defines an evaporating section and at least one condensing section. The condensing section is extended towards at least one or two ends of the evaporating section. The wick structure is provided with at least one groove. The groove is extended through the wick structure along a thickness direction of the main body to connect to two opposite wall surfaces of the chamber, and also extended along a length direction of the main body to communicate with the condensing section and the evaporating section. With these arrangements, the thin heat pipe structure has an extremely small overall thickness and is flexible.