Patents by Inventor Chun-Shiang CHANG

Chun-Shiang CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and testing method thereof
    Patent number: 11942380
    Abstract: A method includes forming a dummy pattern over test region of a substrate; forming an interlayer dielectric (ILD) layer laterally surrounding the dummy pattern; removing the dummy pattern to form an opening; forming a dielectric layer in the opening; performing a first testing process on the dielectric layer; performing an annealing process to the dielectric layer; and performing a second testing process on the annealed dielectric layer.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Shiang Lin, Chia-Cheng Ho, Chun-Chieh Lu, Cheng-Yi Peng, Chih-Sheng Chang
  • Semiconductor device and method for making same
    Patent number: 8736072
    Abstract: A semiconductor circuit pattern includes an angled conductive pattern having a line portion and a pad portion at an end of the line portion extending normal to the line portion on a first side of the line portion. The pad portion has a width greater than a width of the line portion. A spacing has a first portion adjacent the first side of the pad portion, and a second portion adjacent a second side of the pad portion opposite the first side. The first portion of the spacing has a width greater than the width of the second portion of the spacing.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: May 27, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Ching Wang, Chan-Kang Kuo, Ting-Yu Yen, Hsing-Wang Chen, Chun-Shiang Chang, Yen-Shen Chen
  • SEMICONDUCTOR DEVICE AND METHOD FOR MAKING SAME
    Publication number: 20130154114
    Abstract: A semiconductor circuit pattern includes an angled conductive pattern having a line portion and a pad portion at an end of the line portion extending normal to the line portion on a first side of the line portion. The pad portion has a width greater than a width of the line portion. A spacing has a first portion adjacent the first side of the pad portion, and a second portion adjacent a second side of the pad portion opposite the first side. The first portion of the spacing has a width greater than the width of the second portion of the spacing.
    Type: Application
    Filed: December 16, 2011
    Publication date: June 20, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Ching WANG, Chan-Kang KUO, Ting-Yu YEN, Hsing-Wang CHEN, Chun-Shiang CHANG, Yen-Shen CHEN