Abstract: A simple chemical technique has been developed to grow large quantity of carbon nanostructures, including carbon nanotubes, hydrocarbon nanotubes and carbon nanoonions, in the organic solution at ambient (room) temperature and atmospheric pressure using silicon nanostructures (nanowires, nanodots, ribbons, and porous silicon) as starting materials. These CNT and CNO have the lattice d-spacing from 3.4 Å to 5 Å.

Abstract: An organic electroluminescence device which includes an anode, a cathode, a hole transport layer, an electron transport layer, and at least one organic luminescent medium doped with a pyrazolo[3,4b]quinoxaline derivative is disclosed. The present device provides improved efficiency, and the emission band associated therewith is surprisingly narrow. The improved green emitting organic electroluminescence device exhibits high color purity.

Abstract: An organic light-emitting diode is described in which the anode comprises midfrequency magnetron sputtered aluminum-doped zinc oxide to increase the device stability and to decrease the material cost. Due the novel deposition technique, ZnO:Al film with ITO-like electrical conductivity can be deposited and improved device performance, especially the long-term stability can be obtained which are attributed to the modification of the ZnO:Al conductivity and surface chemistry.

Abstract: An electroluminescent element has an anode, a cathode, and an organic layer structure between the two electrodes. The layer structure has a luminescent zone containing 1,9-perinaphtylene-10-1′-naphthylanthracene or derivatives as dopant. The luminescent material utilized as dopant has the following structure called pNNA or pNNA derivatives: Wherein: R1, R2, R3, R4 are individual substituents or a group of substituents, and they may be identical or different. Each substituent is individually selected from the following groups consisting of: H, alkyl (—R), halogen (—X), aryl (—Ar), alkenyl (RCH═CH—), allyl(CH2═CHCH2—), cyano (NC—), isocyano (CN—), amino (H2N—), tertiary amino (R2N—or Ar1Ar2N—), amide (RCONR—), nitro (N2O—), acyl (RCO—), carboxyl (—CO2H), alkoxyl (RO—), alkylsulfonyl (RSO2—), hydroxy (HO—) and single or fused aromatic heterocyclic rings.

Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

Abstract: An organic EL device, includes an anode, cathode, and at least one organic luminescent layer including a compound of the formula: 1

Abstract: An electroluminescent element has an anode, a cathode, and an organic layer structure between the two electrodes. The layer structure has a luminescent zone containing 1,9-perinaphtylene-10-1′-naphthylanthracene or derivatives as dopant.

Abstract: An organic electroluminescent device such as a light-emitting diode is disclosed, in which the emission layer comprises a single emitting material at different aggregate state to obtain constant chromaticity white emission. Correspondingly, a novel configuration has been developed to get white emission and color change in the organic EL devices.

Abstract: An organic light-emitting diode has been disclosed, in which crystalline organic films were utilized to increase device stability upon operation. Correspondingly, a novel method has been developed to improve device performance through depositing organic electroluminescent materials at elevated substrate temperatures. The improvements are attributed to the formation of crystalline films or amorphous films with a better short range order.

Abstract: An organic electroluminescent device such as a light-emitting diode is disclosed, in which the emission layer comprises a single emitting material at different aggregate state to obtain constant chromaticity white emission. Correspondingly, a novel configuration has been developed to get white emission and color change in the organic EL devices.

Abstract: Silicon nanowires and silicon nanoparticle chains are formed by the activation of silicon monoxide in the vapor phase. The silicon monoxide source may be solid or gaseous, and the activation may be by thermal excitation, laser ablation, plasma or magnetron sputtering. The present invention produces large amounts of silicon nanowires without requiring the use of any catalysts that may cause contamination.

Abstract: A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus includes graphite powder as the carbon source, and silicon powder as silicon sources. Metal powders (Fe, Cr and/or Ni) are used as catalyst. Hydrogen was the only feeding gas to the system.

Abstract: A method for the growth of diamond on a substrate combines an ECR (Electron cyclotron resonance) MPCVD (Microwave plasma chemical vapor deposition) method with a MPCVD method in one system. A two-step diamond growing method comprises firstly etching and nucleation performed by the ECR method and then diamond grown by the microwave plasma CVD method. Not only are high quality continuous polycrystalline diamond films on silicon wafer obtained but also heteroepitaxial growth has been achieved in the present invention. Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and Raman spectroscopy have been used to characterize the structure and morphology of the synthesized diamond films.

Abstract: A method and an apparatus have been developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus includes a graphite plate as the carbon source and the silicon substrate as the silicon source. Hydrogen was the only feeding gas to the system.