Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes second spacers over the semiconductor fin. The second spacers vertically extend farther from the semiconductor fin than the first spacers. The semiconductor device includes a metal gate over the semiconductor fin, the metal gate is sandwiched by the first spacers. The metal gate includes a glue layer that contains tantalum nitride.

Abstract: A method of forming a semiconductor device includes surrounding a dummy gate disposed over a fin with a dielectric material; forming a gate trench in the dielectric material by removing the dummy gate and by removing upper portions of a first gate spacer disposed along sidewalls of the dummy gate, the gate trench comprising a lower trench between remaining lower portions of the first gate spacer and comprising an upper trench above the lower trench; forming a gate dielectric layer, a work function layer and a glue layer successively in the gate trench; removing the glue layer and the work function layer from the upper trench; filling the gate trench with a gate electrode material after the removing; and removing the gate electrode material from the upper trench, remaining portions of the gate electrode material forming a gate electrode.

Abstract: An atomization module includes a main fixing member, an auxiliary fixing member, an atomization component and a piezoelectric component. The main fixing member includes a first bonding part, a second bonding part and a connecting part. The first bonding part has a first opening and a first bonding surface surrounding the first opening. The second bonding part is connected to the first bonding part, and the connecting part and the second bonding part surround the first bonding part. The auxiliary fixing member has a second opening and a second bonding surface surrounding the second opening. The piezoelectric component surrounds the first bonding part. The main fixing member has a first adhesive groove, which is jointly defined at least by the main fixing member, the auxiliary fixing member and the atomization component. The first adhesive is provided in the first adhesive groove.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device includes a gate electrode over a channel region of a semiconductor fin, first spacers over the semiconductor fin, and second spacers over the semiconductor fin. A lower portion of the gate electrode is between the first spacers. An upper portion of the gate electrode is above the first spacers. The second spacers are adjacent the first spacers opposite the gate electrode. The upper portion of the gate electrode is between the second spacers.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: An electroless semiconductor bonding structure, an electroless plating system and an electroless plating method of the same are provided. The electroless semiconductor bonding structure includes a first substrate and a second substrate. The first substrate includes a first metal bonding structure disposed adjacent to a first surface of the first substrate. The second substrate includes a second metal bonding structure disposed adjacent to a second surface of the second substrate. The first metal bonding structure connects to the second metal bonding structure at an interface by electroless bonding and the interface is substantially void free.

Abstract: The present disclosure relates to a bicyclic compound, a pharmaceutical composition thereof, and its novel use. More particularly, the present disclosure relates to the bicyclic compound according to Formula I or Formula II, the pharmaceutical composition for treating a stroke, and the use of the bicyclic compound treating the stroke.

Abstract: The present disclosure relates to a bicyclic compound, a pharmaceutical composition thereof, and its novel use. More particularly, the present disclosure relates to the bicyclic compound according to Formula I or Formula II, the pharmaceutical composition for treating a stroke, and the use of the bicyclic compound treating the stroke.

Abstract: A ceiling fan blade includes a foamed layer, two paper layers, and two cover layers. The foamed layer is formed by foaming a polystyrene material. The paper layers are positioned on two opposite faces of the foamed layer respectively The cover layers are positioned on the paper layers respectively so that each paper layer is sandwiched between the foamed layer and one of the cover layers. Thereby, the ceiling fan blade of the present invention is light-weight, low-cost, and easy to manufacture. In addition, energy to rotate the ceiling fan is reduced.

Abstract: A ceiling fan blade includes a foamed layer, two paper layers, and two cover layers. The foamed layer is formed by foaming a polyvinyl chloride material. The paper layers are positioned on two opposite faces of the foamed layer respectively The cover layers are positioned on the paper layers respectively so that each paper layer is sandwiched between the foamed layer and one of the cover layers. Thereby, the ceiling fan blade is light-weight, low-cost, and easy to manufacture. In addition, energy to rotate the ceiling fan is reduced.

Abstract: A ceiling fan blade includes a foamed layer, two paper layers, and two cover layers. The foamed layer is formed by foaming a polystyrene material. The paper layers are positioned on two opposite faces of the foamed layer respectively. The cover layers are positioned on the paper layers respectively so that each paper layer is sandwiched between the foamed layer and one of the cover layers. Thereby, the ceiling fan blade of the present invention is light-weight, low-cost, and easy to manufacture. In addition, energy to rotate the ceiling fan is reduced.

Abstract: A backlight module is disclosed in the present invention. The backlight module includes a light guiding plate, a light source, a transformer and a constrainer. The transformer is disposed between the light guiding plate and the light source. The transformer is for transforming a first beam emitted from the light source into a second beam, so as to transmit the second beam to the light guiding plate, wherein a spectrum of the first beam is different from a spectrum of the second beam. The constrainer is connected to the light source for constraining a movement of the transformer. The constrainer includes a first fixing portion disposed on the light source and a second fixing portion connected to the first fixing portion, the second fixing portion being disposed on the transformer to fix the transformer relative to the light source.

Abstract: A flat display panel includes a bridge line disposed between adjacent common lines. When a short defect occurs, the common line near the short defect can be directly cut off in order to repair the short defect and the common voltage can be transferred through the bridge line to maintain the normal operation of the flat display panel.

Abstract: A backlight module is disclosed in the present invention. The backlight module includes a light guiding plate, a light source, a transformer and a constrainer. The transformer is disposed between the light guiding plate and the light source. The transformer is for transforming a first beam emitted from the light source into a second beam, so as to transmit the second beam to the light guiding plate, wherein a spectrum of the first beam is different from a spectrum of the second beam. The constrainer is connected to the light source for constraining a movement of the transformer. The constrainer includes a first fixing portion disposed on the light source and a second fixing portion connected to the first fixing portion, the second fixing portion being disposed on the transformer to fix the transformer relative to the light source.

Abstract: A flat display panel includes a bridge line disposed between adjacent common lines. When a short defect occurs, the common line near the short defect can be directly cut off in order to repair the short defect and the common voltage can be transferred through the bridge line to maintain the normal operation of the flat display panel.

Abstract: A flat display panel includes a plurality of bridge lines disposed between adjacent common lines. When a short defect occurs, the common line near the short defect can be directly cut off in order to repair the short defect and the common voltage can be transferred through the bridge lines to maintain the normal operation of the flat display panel.

Abstract: A flat display panel includes a plurality of bridge lines disposed between adjacent common lines. When a short defect occurs, the common line near the short defect can be directly cut off in order to repair the short defect and the common voltage can be transferred through the bridge lines to maintain the normal operation of the flat display panel.