Patents by Inventor Chun-Wen Cheng

Chun-Wen Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11186481
    Abstract: A sensor device includes a microelectromechanical system (MEMS) force sensor, and a capacitive acceleration sensor. In the method of manufacturing the sensor device, a sensor portion of the MEMS force sensor is prepared over a front surface of a first substrate. The sensor portion includes a piezo-resistive element and a front electrode. A bottom electrode and a first electrode are formed on a back surface of the first substrate. A second substrate having an electrode pad and a second electrode to the bottom of the first substrate are attached such that the bottom electrode is connected to the electrode pad and the first electrode faces the second electrode with a space therebetween.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: November 30, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen Hsiung Yang, Chun-Wen Cheng, Jiou-Kang Lee
  • Patent number: 11180363
    Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: November 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kuei-Sung Chang, Tai-Bang An, Chun-wen Cheng, Hung-Hua Lin
  • Patent number: 11184694
    Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: November 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun-Yin Tsai, Tzu-Heng Wu, Wen-Cheng Kuo
  • Patent number: 11174158
    Abstract: In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: November 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Fei-Lung Lai, Kuei-Sung Chang, Shang-Ying Tsai
  • Publication number: 20210309508
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.
    Type: Application
    Filed: June 16, 2021
    Publication date: October 7, 2021
    Inventors: Kuei-Sung Chang, Chun-Wen Cheng, Fei-Lung Lai, Shing-Chyang Pan, Yuan-Chih Hsieh, Yi-Ren Wang
  • Publication number: 20210314707
    Abstract: A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen-Tuan Lo
  • Publication number: 20210302367
    Abstract: A biochip including a fluidic substrate having an opening extending completely through the fluidic substrate. The biochip further includes a silicon oxide coating on the fluidic substrate. The biochip further includes a plurality of sidewalls on the fluidic substrate, wherein the plurality of sidewalls defines a channel in fluid communication with the opening, the silicon oxide coating is between adjacent sidewalls of the plurality of sidewalls, and each of the plurality of sidewalls comprises polydimethylsiloxane (PDMS). The biochip further includes a detection substrate spaced from the fluidic substrate.
    Type: Application
    Filed: April 2, 2021
    Publication date: September 30, 2021
    Inventors: Yi-Shao LIU, Chun-Ren CHENG, Chun-wen CHENG
  • Patent number: 11117796
    Abstract: An embodiment is a MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: September 14, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Shang-Ying Tsai, Hung-Chia Tsai, Yi-Chuan Teng
  • Patent number: 11099152
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: August 24, 2021
    Inventors: Yi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
  • Publication number: 20210246014
    Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.
    Type: Application
    Filed: February 7, 2020
    Publication date: August 12, 2021
    Inventors: Kuei-Sung Chang, Tai-Bang An, Chun-wen Cheng, Hung-Hua Lin
  • Patent number: 11089408
    Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
  • Publication number: 20210238030
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.
    Type: Application
    Filed: March 31, 2021
    Publication date: August 5, 2021
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen Cheng Kuo
  • Patent number: 11078074
    Abstract: Processes for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices are provided. In some embodiments, the MEMS devices are formed on a sacrificial substrate or wafer, the sacrificial substrate or wafer is bonded to a CMOS die or wafer, and the sacrificial substrate or wafer is removed. In other embodiments, the MEMS devices are formed over a sacrificial region of a CMOS die or wafer and the sacrificial region is subsequently removed. Integrated circuit (ICs) resulting from the processes are also provided.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: August 3, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • Patent number: 11051109
    Abstract: A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a second backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: June 29, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen-Tuan Lo
  • Publication number: 20210188627
    Abstract: Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.
    Type: Application
    Filed: March 5, 2021
    Publication date: June 24, 2021
    Inventors: Chia-Hua Chu, Chun-Wen Cheng, Wen Cheng Kuo
  • Patent number: 11040870
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: June 22, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuei-Sung Chang, Chun-Wen Cheng, Fei-Lung Lai, Shing-Chyang Pan, Yuan-Chih Hsieh, Yi-Ren Wang
  • Publication number: 20210179419
    Abstract: A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.
    Type: Application
    Filed: December 16, 2019
    Publication date: June 17, 2021
    Inventors: Chun-wen CHENG, Chi-Hang CHIN, Kuei-Sung CHANG
  • Patent number: 11027310
    Abstract: The present disclosure relates to a method of depositing a fluid onto a substrate. In some embodiments, the method may be performed by mounting a substrate to a micro-fluidic probe card, so that the substrate abuts a cavity within the micro-fluidic probe card that is in communication with a fluid inlet and a fluid outlet. A first fluidic chemical is selectively introduced into the cavity via the fluid inlet of the micro-fluidic probe card.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: June 8, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Yi-Shao Liu, Fei-Lung Lai, Shang-Ying Tsai
  • Patent number: 11014805
    Abstract: A method of making a semiconductor package includes bonding a carrier to a surface of the substrate, wherein the carrier is free of active devices, wherein the carrier includes a carrier bond pad on a surface of the carrier. The method further includes bonding a wafer bond pad of an active circuit wafer to the carrier bond pad, wherein the bonding of the wafer bond pad to the carrier bond pad comprises re-graining the wafer bond pad to form at least one grain boundary extending from the wafer bond pad to the carrier bond pad.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: May 25, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-wen Cheng, Hung-Chia Tsai, Lan-Lin Chao, Yuan-Chih Hsieh, Ping-Yin Liu
  • Patent number: 10989685
    Abstract: A method of sensing a biological sample includes introducing a fluid containing the biological sample through a first opening in a substrate. The method further includes passing the fluid from the first opening to a first cavity through at least one microfluidic channel. The method further includes repelling the biological sample from a first surface of the first cavity using a first surface modification layer. The method further includes attracting the biological sample to a sensing device using a plurality of modified surface patterns, wherein a first modified surface pattern of the plurality of modified surface patterns has different surface properties from a second modified surface pattern of the plurality of modified surface patterns. The method further includes outputting the fluid through a second opening in the substrate.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: April 27, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Shao Liu, Chun-Wen Cheng, Chun-Ren Cheng