Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: A method of manufacturing a semiconductor device includes depositing a photoresist material over a substrate. The substrate is rotated to spread the photoresist material. A gas is blown to an edge of the substrate when rotating the substrate. The rotating of the substrate is stopped. The blowing of the gas is stopped.

Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: An electrochemical extended-gate transistor (EET) system is provided, the system includes: a field effect transistor (FET), having a gate, a source, and a drain; a potentiostat, having a working electrode, a counter electrode, and a reference electrode; wherein the working electrode is coupled with a detection region, and the counter electrode is coupled with the gate; wherein the detection region, the gate, and the reference electrode are arranged in an ion fluid; wherein the potentiostat is configured to generate redox in the ion fluid by an electrochemical method to detect the target. A method for detecting targets are used to such system.

Abstract: An electrochemical extended-gate transistor (EET) system is provided, the system includes: a field effect transistor (FET), having a gate, a source, and a drain; a potentiostat, having a working electrode, a counter electrode, and a reference electrode; wherein the working electrode is coupled with a detection region, and the counter electrode is coupled with the gate; wherein the detection region, the gate, and the reference electrode are arranged in an ion fluid; wherein the potentiostat is configured to generate redox in the ion fluid by an electrochemical method to detect the target. A method for detecting targets are used to such system.