Patents by Inventor Chung-Chang Chang

Chung-Chang Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-GAN HIGH-ELECTRON-MOBILITY TRANSISTOR
    Publication number: 20240154021
    Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.
    Type: Application
    Filed: December 29, 2022
    Publication date: May 9, 2024
    Inventors: TING-CHANG CHANG, Wei-Chen Huang, Shih-Kai Lin, Yong-Ci Zhang, Sheng-Yao Chou, Chung-Wei Wu, Po-Hsun Chen
  • Sensor with dam structure and method for manufacturing the same
    Patent number: 11676983
    Abstract: A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: June 13, 2023
    Assignee: Powertech Technology Inc.
    Inventors: Chung-Chang Chang, Chang-Lun Lu, Ming-Hung Lin
  • SENSOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20210210539
    Abstract: A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.
    Type: Application
    Filed: December 28, 2020
    Publication date: July 8, 2021
    Applicant: Powertech Technology Inc.
    Inventors: Chung-Chang Chang, Chang-Lun Lu, Ming-Hung Lin