Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: A ferroelectric memory device and a semiconductor die are provided. The ferroelectric memory device includes a gate electrode; a channel layer, overlapped with the gate electrode; source/drain contacts, in contact with separate ends of the channel layer; a ferroelectric layer, lying between the gate electrode and the channel layer; and a first insertion layer, extending in between the ferroelectric layer and the channel layer, and comprising a metal carbonitride or a metal nitride.

Abstract: A hinge assembly adapted to an electronic device is provided. The hinge assembly comprises a fixing member, a sliding shaft, a connecting member, a rotating shaft and a rotating member. A curved guide rail is formed at the side plate. When the sliding shaft is located at a first position and a force applies on the rotating member, the sliding shaft moves from the first position to a second position along the curved guide rail, when the sliding shaft is located at the second position of the curved guide rail and the force applies on the rotating member continuously, the rotating member rotates around the rotating shaft.

Abstract: A hinge component for an electronic device includes a fixing member, a rotating member and a central shaft. The fixing member includes a side plate and two fixing plates, a curved guiding rail is formed on the side plate. The rotating member includes a rotating portion, a connecting portion and an engaging portion. The fixing member and the rotating member are assembled to the casing and the back plate of the electronic device. The fixing member is disposed inside the casing but not exposed. As a result, the electronic device is made thinner. The hinge component is not easily damaged under an external force, and the lifecycle of the hinge component is improved. The rotating portion rotates around the connection of the back plate and the casing as a virtual rotating axis. At the same time, the central shaft is driven to slide in the curved guiding rail.

Abstract: A hinge assembly adapted to an electronic device is provided. The hinge assembly comprises a fixing member, a sliding shaft, a connecting member, a rotating shaft and a rotating member. A curved guide rail is formed at the side plate. When the sliding shaft is located at a first position and a force applies on the rotating member, the sliding shaft moves from the first position to a second position along the curved guide rail, when the sliding shaft is located at the second position of the curved guide rail and the force applies on the rotating member continuously, the rotating member rotates around the rotating shaft.

Abstract: A hinge component for an electronic device includes a fixing member, a rotating member and a central shaft. The fixing member includes a side plate and two fixing plates, a curved guiding rail is formed on the side plate. The rotating member includes a rotating portion, a connecting portion and an engaging portion. The fixing member and the rotating member are assembled to the casing and the back plate of the electronic device. The fixing member is disposed inside the casing but not exposed. As a result, the electronic device is made thinner. The hinge component is not easily damaged under an external force, and the lifecycle of the hinge component is improved. The rotating portion rotates around the connection of the back plate and the casing as a virtual rotating axis. At the same time, the central shaft is driven to slide in the curved guiding rail.

Abstract: The present invention provides a method and a thermal compression head for flip chip bonding. The thermal compression head includes a main body and a contact portion. The main body has a main body opening. The contact portion has a contact surface and a plurality of openings. The openings communicate with the main body opening. When the contact surface of the contact portion is used to adsorb a chip, the contact surface of the chip has a plurality of adsorbed zones corresponding to the contact surface openings. After the chip is bonded to a substrate, the protrusions of the adsorbed zones are relatively slight. Therefore, the interconnection between the chip and the substrate is ensured.