Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: An LED light set comprising at least one LED dice and two conductive wires covered by insulated layer, a holder is installed on the wires at every certain distance, one LED dice is installed on every holder; each of the LED dice connects to two conductive wires with very thin metal wires, every LED dice is wrapped with transparent package, the transparent package packs in the holder, LED dice, the thin metal wires and the conductive wires. Based on above description, the present invention achieves smaller in physical size, easy to manufacture at lower cost, also has pantoscopic emission, waterproof and bendable characters.

Abstract: An LED light set comprising at least one LED dice and two conductive wires covered by insulated layer, a holder is installed on the wires at every certain distance, one LED dice is installed on every holder; each of the LED dice connects to two conductive wires with very thin metal wires, every LED dice is wrapped with transparent package, the transparent package packs in the holder, LED dice, the thin metal wires and the conductive wires. Based on above description, the present invention achieves smaller in physical size, easy to manufacture at lower cost, also has pantoscopic emission, waterproof and bendable characters.