Abstract: A thin film transistor includes an active layer and at least one gate stack. The active layer may be formed using multiple iterations of a unit layer stack deposition process, which includes an acceptor-type oxide deposition process and a post-transition metal oxide deposition process. A surface of each gate dielectric within the at least one gate stack contacts a surface of a respective layer of the oxide of the acceptor-type element so that leakage current of the active layer may be minimized. A source electrode and a drain electrode may contact an oxide layer providing lower contact resistance such as a layer of the post-transition metal oxide or a zinc oxide layer within the active layer.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.

Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: A hand-held electrical communication device including an image sensing unit, a mobile TV receiver, an image signal processing unit, a display unit and a baseband processing unit is provided. The image sensing unit generates an original image frame. The mobile TV receiver receives a compressed video data. The image signal processing unit adjusts the original image frame to be an adjusted image frame or decompresses the compressed video data into a video image frame, and respectively scales the adjusted image frame or the video image frame to be a scaled image frame. The baseband processing unit displays the scaled image frame on the display unit.

Abstract: A hand-held electrical communication device including a host processor, a multi-media processor and a display unit is provided. The host processor is used for outputting a graphic rendering command. The multi-media processor is used for adjusting an original image frame as an adjusted image frame, processing a dynamic image of the adjusted image frame as a processed dynamic image frame, processing a static image of the adjusted image frame as a processed static image frame, or drawing a graphic frame according to the graphic rendering command. The multi-media processor scales the adjusted image frame, the processed dynamic image frame, the processed static image frame or the graphic frame. The display unit is controlled by the host processor to display the scaled adjusted image frame, the scaled processed dynamic image frame, the scaled processed static image frame or the scaled graphic frame.

Abstract: A hand-held electrical communication device including an image sensing unit, a mobile TV receiver, an image signal processing unit, a display unit and a baseband processing unit is provided. The image sensing unit generates an original image frame. The mobile TV receiver receives a compressed video data. The image signal processing unit adjusts the original image frame to be an adjusted image frame or decompresses the compressed video data into a video image frame, and respectively scales the adjusted image frame or the video image frame to be a scaled image frame. The baseband processing unit displays the scaled image frame on the display unit.

Abstract: A handheld electrical communication device includes an image sensing unit, an image signal processing unit, a storage unit, a display unit and a baseband processing unit. The image sensing unit generates an original image frame. The image signal processing unit adjusts the original image frame to be an adjusted image frame, scales the adjusted image frame to be a scaled image frame, and compresses the adjusted image frame into compressed image data. The storage unit stores the compressed image data. The baseband processing unit reads and outputs the compressed image data from the storage unit to the image signal processing unit. The image signal processing unit decompresses the compressed image data to be the adjusted image frame, scales the adjusted image frame to be the scaled image frame and outputs the scaled image frame to the baseband processing unit. The scaled image frame is displayed on the display unit.

Abstract: A method of coating a roll of material with a plurality of sequins comprising steps of (1) passing a roll of material with a plurality of sequins with the sequins on an upper surface of said roll of material through two wooden guards; (2) passing said roll of material with a plurality of sequins with the sequins on said upper surface of said roll of material through a coating device, (3) passing said roll of material with a plurality of sequins with the sequins on said upper surface of said roll of material through a scrapper device to ensure the evenness of said roll of material; (4) passing said roll of material with a plurality of sequins with the sequins on said upper surface of the material through a drying room; and (5) rolling said roll of material into a second roll through a roller. This method is repeated four times to ensure that the material will be able to pass the physical and mechanical tests imposed by the Consumer Product Safety Commission.