Patents by Inventor Chung-En Kao
Chung-En Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160181152Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.Type: ApplicationFiled: February 29, 2016Publication date: June 23, 2016Inventors: Hsiang-Huan Lee, Shau-Lin Shue, Keith Kuang-Kuo Koai, Hai-Ching Chen, Tung-Ching Tseng, Wen-Cheng Yang, Chung-En Kao, Ming-Han Lee, Hsin-Yen Huang
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Patent number: 9318364Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.Type: GrantFiled: January 13, 2014Date of Patent: April 19, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiang-Huan Lee, Shau-Lin Shue, Keith Kuang-Kuo Koai, Hai-Ching Chen, Tung-Ching Tseng, Wen-Cheng Yang, Chung-En Kao, Ming-Han Lee, Hsin-Yen Huang
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Patent number: 9279179Abstract: In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).Type: GrantFiled: February 6, 2012Date of Patent: March 8, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Chin Tsai, Bo-Hung Lin, Chung-En Kao, Chin-Hsiang Lin
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Patent number: 9281221Abstract: One or more techniques or systems for ultra-high vacuum (UHV) wafer processing are provided herein. In some embodiments, a vacuum system includes one or more cluster tools connected via one or more bridges. For example, a first cluster tool is connected to a first bridge. Additionally, a second cluster tool is connected to a second bridge. In some embodiments, the first bridge is configured to connect the second cluster tool to the first cluster tool. In some embodiments, the second cluster tool is connected to the first bridge, thus forming a ‘tunnel’. In some embodiments, the second bridge comprises one or more facets configured to enable a connection to an additional process chamber or an additional cluster tool. In this manner, a more efficient UHV environment is provided, thus enhancing a yield associated with wafer processing, for example.Type: GrantFiled: November 16, 2012Date of Patent: March 8, 2016Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chung-En Kao, Tien-Chen Hu, Mao-Lin Kao, Kuo-Fu Chien, Keith Koai
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Publication number: 20150307985Abstract: In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.Type: ApplicationFiled: July 6, 2015Publication date: October 29, 2015Inventors: Bo-Hung Lin, Ming-Chih Tsai, You-Hua Chou, Chung-En Kao
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Patent number: 9093252Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.Type: GrantFiled: February 16, 2012Date of Patent: July 28, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bo-Hung Lin, Ming-Chih Tsai, You-Hua Chou, Chung-En Kao
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Publication number: 20150197849Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.Type: ApplicationFiled: January 13, 2014Publication date: July 16, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsiang-Huan Lee, Shau-Lin Shue, Keith Kuang-Kuo Koai, Hai-Ching Chen, Tung-Ching Tseng, Wen-Cheng Yang, Chung-En Kao, Ming-Han Lee, Hsin-Yen Huang
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Patent number: 9026241Abstract: The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.Type: GrantFiled: February 24, 2012Date of Patent: May 5, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Cheng Yang, Chung-En Kao, You-Hua Chou, Ming-Chih Tsai, Chen-Chia Chiang, Bo-Hung Lin, Chin-Hsiang Lin
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Publication number: 20150118843Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.Type: ApplicationFiled: January 5, 2015Publication date: April 30, 2015Inventors: Ming-Chin Tsai, Bo-Hung Lin, You-Hua Chou, Chung-En Kao
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Publication number: 20150107273Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.Type: ApplicationFiled: October 22, 2013Publication date: April 23, 2015Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin
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Publication number: 20150053563Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.Type: ApplicationFiled: August 21, 2013Publication date: February 26, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Ming-Chin Tsai, Chung-En Kao, Victor Y. Lu
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Patent number: 8953298Abstract: A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.Type: GrantFiled: November 30, 2011Date of Patent: February 10, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung-En Kao, You-Hua Chou, Chih-Tsung Lee, Ming-Shiou Kuo
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Patent number: 8926806Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.Type: GrantFiled: January 23, 2012Date of Patent: January 6, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Chin Tsai, Bo-Hung Lin, You-Hua Chou, Chung-En Kao
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Patent number: 8884526Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.Type: GrantFiled: January 20, 2012Date of Patent: November 11, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bo-Hung Lin, Ming-Chih Tsai, Chia-Ho Chen, Chung-En Kao
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Publication number: 20140140792Abstract: One or more techniques or systems for ultra-high vacuum (UHV) wafer processing are provided herein. In some embodiments, a vacuum system includes one or more cluster tools connected via one or more bridges. For example, a first cluster tool is connected to a first bridge. Additionally, a second cluster tool is connected to a second bridge. In some embodiments, the first bridge is configured to connect the second cluster tool to the first cluster tool. In some embodiments, the second cluster tool is connected to the first bridge, thus forming a ‘tunnel’. In some embodiments, the second bridge comprises one or more facets configured to enable a connection to an additional process chamber or an additional cluster tool. In this manner, a more efficient UHV environment is provided, thus enhancing a yield associated with wafer processing, for example.Type: ApplicationFiled: November 16, 2012Publication date: May 22, 2014Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chung-En Kao, Tien-Chen Hu, Mao-Lin Kao, Kuo-Fu Chien, Keith Koai
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Publication number: 20130267045Abstract: An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.Type: ApplicationFiled: April 4, 2012Publication date: October 10, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tsung LEE, Hung Jui CHANG, You-Hua CHOU, Shiu-Ko JANGJIAN, Chung-En KAO, Ming-Chin TSAI, Huan-Wen LAI
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Publication number: 20130226327Abstract: The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.Type: ApplicationFiled: February 24, 2012Publication date: August 29, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Cheng Yang, Chung-En Kao, You-Hua Chou, Ming-Chih Tsai, Chen-Chia Chiang, Bo-Hung Lin, Chin-Hsiang Lin
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Publication number: 20130213797Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.Type: ApplicationFiled: February 16, 2012Publication date: August 22, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bo-Hung Lin, Ming-Chih Tsai, You-Hua Chou, Chung-En Kao
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Publication number: 20130199926Abstract: In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).Type: ApplicationFiled: February 6, 2012Publication date: August 8, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Chih Tsai, Bo-Hung Lin, Chung-En Kao, Chin-Hsiang Lin
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Publication number: 20130187546Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.Type: ApplicationFiled: January 20, 2012Publication date: July 25, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bo-Hung Lin, Ming-Chih Tsai, Chia-Ho Chen, Chung-En Kao