Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: This invention provides a plant senescence-inducible promoter and its relevant recombinant plasmid and transgenic plant.

Abstract: This invention provides a plant senescence-inducible promoter and its relevant recombinant plasmid and transgenic plant.

Abstract: Disclosed herein is a post-etch treatment for plasma etched metal-comprising features in semiconductor devices. The post-etch treatment significantly reduces or eliminates surface corrosion of the etched metal-comprising feature. It is particularly important to prevent the formation of moisture on the surface of the feature surface prior to an affirmative treatment to remove corrosion-causing contaminants from the feature surface. Avoidance of moisture formation is assisted by use of a high vacuum; use of an inert, moisture-free purge gas; and by maintaining the substrate at a sufficiently high temperature to volatilize moisture.