Abstract: In an embodiment, a device includes: a word line extending in a first direction; a data storage layer on a sidewall of the word line; a channel layer on a sidewall of the data storage layer; a back gate isolator on a sidewall of the channel layer; and a bit line having a first main region and a first extension region, the first main region contacting the channel layer, the first extension region separated from the channel layer by the back gate isolator, the bit line extending in a second direction, the second direction perpendicular to the first direction.

Abstract: A semiconductor device and method of manufacture are provided. In embodiments a memory array is formed by manufacturing portions of a word line during different and separate processes, thereby allowing the portions formed first to act as a structural support during later processes that would otherwise cause undesired damage to the structures.

Abstract: A multi-channel payment method for a multi-channel payment system comprises the payer or the payee who initiated the payment request logs in to the multi-channel payment system; the payer or the payee who initiated the payment request placing an order in the multi-channel payment system, wherein the order comprises a designated payment gateway; the multi-channel payment system determining a predicted fee of the order according to the designated payment gateway, past order records, and a real-time exchange rate; the multi-channel payment system performing an anti-money laundering verification of the order; the payer reviewing the order and the predicted fee through a multiple auditing method; and the multi-channel payment system executing payment from the payer to the payee according to the order and the designated payment gateway, and storing a payment detail of the order.

Abstract: In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.

Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure over and in a substrate. The method includes forming a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack over the substrate. Each of the first gate stack or the second gate stack is wider than each of the third gate stack or the fourth gate stack. The method includes forming a first contact structure and a second contact structure over the first source/drain structure and the second source/drain structure respectively. A first average width of the first contact structure is substantially equal to a second average width of the second contact structure.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first trench in the base and between the first fin and the second fin. The method includes forming an isolation layer over the base and in the first trench. The first fin and the second fin are partially in the isolation layer. The method includes forming a first gate stack over the first fin and the isolation layer. The method includes forming a second gate stack over the second fin and the isolation layer. The method includes removing a bottom portion of the base. The isolation layer passes through the base after the bottom portion of the base is removed.

Abstract: The present disclosure provides a detection system and a detection method. The microphone of the detection system receives the response signal formed according to the shape of the sealed cavity. The conversion unit transfers the response signal in the time domain to the frequency domain signal in the frequency domain. The calculation unit obtains every frequency value corresponding to the frequency gradient being zero of each frequency waveform which is chosen of the response signal. The average unit averages every frequency value corresponding to the frequency gradient being zero of each chosen frequency waveform into the average frequency value and outputs an average frequency value. The determination unit determines whether the average frequency value is located in the corresponding frequency tolerance range, so that the wearing status of the in-ear earphone is confirmed.

Abstract: The present disclosure provides a detection system and a detection method. The microphone of the detection system receives the response signal formed according to the shape of the sealed cavity. The conversion unit transfers the response signal in the time domain to the frequency domain signal in the frequency domain. The calculation unit obtains every frequency value corresponding to the frequency gradient being zero of each frequency waveform which is chosen of the response signal. The average unit averages every frequency value corresponding to the frequency gradient being zero of each chosen frequency waveform into the average frequency value and outputs an average frequency value. The determination unit determines whether the average frequency value is located in the corresponding frequency tolerance range, so that the wearing status of the in-ear earphone is confirmed.

Abstract: A biological image processing method is provided. The method acquires first time-frequency data from an image data; processing the first time-frequency data into the second time-frequency data using a filter module; and converting the second time-frequency data into a time domain signal. The filter module is obtained by machine learning, and is trained using a first sample time-frequency signal as input and a second sample time-frequency signal as output, wherein the noise of the time domain signal corresponding to the second sample time-frequency signal is less than the noise of the time domain signal corresponding to the first sample time-frequency signal. A biological information detection device is also provided.

Abstract: The present disclosure provides a control method for a touch device. The control method of the touch device allows the plurality of pressure sensors to be activated to detect the pressure on the touch position of the touch panel while the capacitive touch sensor is probably invalid and the touch device is abnormal. Therefore, the touch device works continuously when the capacitive touch sensor is probably invalid.

Abstract: The present disclosure provides a control method for a touch device. The control method of the touch device allows the plurality of pressure sensors to be activated to detect the pressure on the touch position of the touch panel while the capacitive touch sensor is probably invalid and the touch device is abnormal. Therefore, the touch device works continuously when the capacitive touch sensor is probably invalid.

Abstract: A wind noise filtering device includes a mixer, an extraction unit, a decision unit, a wind noise filter and an output module. The mixer receives a source sound and outputs an input audio. The extraction unit is electrically connected to the mixer to receive the input audio, the extraction unit performs feature extraction on the input audio to generate a plurality of feature data. The decision unit is electrically connected to the extraction unit to receive the feature data, the decision unit outputs a decision signal according to the plurality of feature data. The wind noise filter is electrically connected to the decision unit to receive the decision signal and is controlled to be turned on or off by the decision signal. The output module is electrically connected to the wind noise filter and the mixer to output an output audio according to the input audio or the filtered audio.

Abstract: A biological image processing method is provided. The method acquires first time-frequency data from an image data; processing the first time-frequency data into the second time-frequency data using a filter module; and converting the second time-frequency data into a time domain signal. The filter module is obtained by machine learning, and is trained using a first sample time-frequency signal as input and a second sample time-frequency signal as output, wherein the noise of the time domain signal corresponding to the second sample time-frequency signal is less than the noise of the time domain signal corresponding to the first sample time-frequency signal. A biological information detection device is also provided.

Abstract: A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.

Abstract: An isolation feature with a nitrogen-doped fill dielectric and a method of forming the isolation feature are disclosed. In an exemplary embodiment, the method of forming the isolation feature comprises receiving a substrate having a top surface. A recess is etched in the substrate, the recess extending from the top surface into the substrate. A dielectric is deposited within the recess such that the depositing of the dielectric includes introducing nitrogen during a chemical vapor deposition process. Accordingly, the deposited dielectric includes a nitrogen-doped dielectric. The deposited dielectric may include a nitrogen-doped silicon oxide. In some embodiments, the depositing of the dielectric disposes the nitrogen-doped dielectric in contact with a surface of the recess. In further embodiments, a liner material is deposited within the recess prior to the depositing of the dielectric within the recess.

Abstract: A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.

Abstract: An isolation feature with a nitrogen-doped fill dielectric and a method of forming the isolation feature are disclosed. In an exemplary embodiment, the method of forming the isolation feature comprises receiving a substrate having a top surface. A recess is etched in the substrate, the recess extending from the top surface into the substrate. A dielectric is deposited within the recess such that the depositing of the dielectric includes introducing nitrogen during a chemical vapor deposition process. Accordingly, the deposited dielectric includes a nitrogen-doped dielectric. The deposited dielectric may include a nitrogen-doped silicon oxide. In some embodiments, the depositing of the dielectric disposes the nitrogen-doped dielectric in contact with a surface of the recess. In further embodiments, a liner material is deposited within the recess prior to the depositing of the dielectric within the recess.

Abstract: A collision detection circuit for a multi-port memory system is presented. The collision detection circuit detects a collision condition if the addresses at two or more ports at the same time match and if one of the two or more ports is writing to the memory location associated with that address. A collision flag can then be set when the collision condition exists. In some embodiments, arbitration can occur when the collision flag is set.