Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A semiconductor device includes a first transistor and a protection structure. The first transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, and a channel layer disposed on the gate dielectric. The protection structure is laterally surrounding the gate electrode, the gate dielectric and the channel layer of the first transistor. The protection structure includes a first capping layer and a dielectric portion. The first capping layer is laterally surrounding and contacting the gate electrode, the gate dielectric and the channel layer of the first transistor. The dielectric portion is disposed on the first capping layer and laterally surrounding the first transistor.

Abstract: Semiconductor structure and methods of forming the same are provided. An exemplary method includes receiving a workpiece including a magnetic tunneling junction (MTJ) and a conductive capping layer disposed on the MTJ, depositing a first dielectric layer over the workpiece, performing a first planarization process to the first dielectric layer, and after the performing of the first planarization process, patterning the first dielectric layer to form an opening exposing a top surface of the conductive capping layer, selectively removing the conductive capping layer. The method also includes depositing an electrode layer to fill the opening and performing a second planarization process to the workpiece such that a top surface of the electrode layer and a top surface of the first dielectric layer are coplanar.

Abstract: In one example, an electronic device housing may include a first cover, a second cover, and a latch assembly to detachably connect the first cover and the second cover. The latch assembly may include a first bracket to fixedly engage with the first cover, a latch to slide back and forth along the first bracket between a lock position to hold the second cover and an unlock position to release the second cover, an elastic member disposed between the latch and the first bracket to generate a force to the latch to hold the second cover, and a cable connected to the latch. The cable may generate a pulling force to the latch to release the second cover when an external force is applied to the cable.

Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

Abstract: A security device and method receives gas pressure signals from a pair of gas pressure sensors, one set at the inside and the other at the outside of a door or a window. Gas pressure values for the signals (of the indoor and outdoor environments) are obtained and a camera, working in the same location as the pair of sensors, is controlled to capture photos or videos when it is determined that the gas pressure values of both sensors have changed and magnitude of the changes are both within a preset gas pressure range. Photos and videos are captured by the camera and transmitted to at least one validated contact according to preset contact information.

Abstract: A security device and method receives gas pressure signals from a pair of gas pressure sensors, one set at the inside and the other at the outside of a door or a window. Gas pressure values for the signals (of the indoor and outdoor environments) are obtained and a camera, working in the same location as the pair of sensors, is controlled to capture photos or videos when it is determined that the gas pressure values of both sensors have changed and magnitude of the changes are both within a preset gas pressure range. Photos and videos are captured by the camera and transmitted to at least one validated contact according to preset contact information.

Abstract: The present invention provides a microcomputer safe medication reminder manager that includes an electronic medicine storage case and a timing device. A support base is located on the electronic medicine storage case, and medicine boxes are located on the support base. The medicine boxes are separated into a plurality of medicine compartments, and indicator lights are correspondingly located on the support base and coupled to match each of the medicine compartments. The timing device is electrically connected to the electronic medicine storage case, thereby enabling the timing device to control flickering of the corresponding indicator lights. Accordingly, the present invention is provided with convenience of use, portability and effectiveness to remind a user of times when to take medicine and exact location of the medicine.

Abstract: A microprocessor parking meter includes: a casing; a plurality of control keys formed on the casing for selecting several parking areas, for starting a timing operation or for stopping the timing operation; a display of multiple digits formed on the casing for showing a selected parking area, a number of parking units and a real clock time, a microprocessor operatively scanning the display and the control keys for showing or sequentially degrading the number of parking units each unit corresponding to a time interval with respect to a selected parking areas among the plural different parking areas during a lapse of parking time, forming a compact unit held in a car ready for outside inspection or for convenient parking service by a owner of the meter.