Patents by Inventor Chung-I Hung

Chung-I Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240195082
    Abstract: An antenna structure includes a ground element, a feeding radiation element, a first radiation element, a second radiation element, a shorting radiation element, a third radiation element, and a fourth radiation element. The feeding radiation element has a feeding point. The first radiation element is coupled to the feeding radiation element. The second radiation element is coupled to the feeding radiation element. The second radiation element and the first radiation element substantially extend in opposite directions. The feeding radiation element is further coupled through the shorting radiation element to the ground element. The third radiation element is coupled to the ground element. The third radiation element is adjacent to the first radiation element. The fourth radiation element is coupled to the ground element. The fourth radiation element is adjacent to the second radiation element.
    Type: Application
    Filed: January 12, 2023
    Publication date: June 13, 2024
    Inventors: Yi-Chih LO, Chung-Ting HUNG, Chun-Yuan WANG, Chun-I CHEN, Jing-Yao XU, Yan-Cheng HUANG, Chu-Yu TANG
  • Patent number: 11996630
    Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, and a nonconductive support element. The first radiation element is coupled to a first grounding point on the ground element. The second radiation element has a feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to a second grounding point on the ground element. The third radiation element is adjacent to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are disposed on the nonconductive support element. The second radiation element is at least partially surrounded by the first radiation element. The third radiation element is at least partially surrounded by the second radiation element.
    Type: Grant
    Filed: September 2, 2022
    Date of Patent: May 28, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Yu-Chen Zhao, Chung-Ting Hung, Chin-Lung Tsai, Ying-Cong Deng, Kuan-Hsien Lee, Yi-Chih Lo, Kai-Hsiang Chang, Chun-I Cheng, Yan-Cheng Huang
  • Patent number: 11996633
    Abstract: A wearable device includes a ground element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, and a fifth radiation element. The first radiation element has a feeding point, and is coupled to a first grounding point on the ground element. A slot region is surrounded by the first radiation element and the ground element. The second radiation element is coupled to a second grounding point on the ground element. The third radiation element is coupled to the second grounding point. The third radiation element and the second radiation element substantially extend in opposite directions. The fourth radiation element and the fifth radiation element are disposed inside the slot region. An antenna structure is formed by the first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element.
    Type: Grant
    Filed: September 6, 2022
    Date of Patent: May 28, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Chun-I Cheng, Chung-Ting Hung, Chin-Lung Tsai, Kuan-Hsien Lee, Yu-Chen Zhao, Kai-Hsiang Chang
  • Publication number: 20240154015
    Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.
    Type: Application
    Filed: March 22, 2023
    Publication date: May 9, 2024
    Inventors: Jui-Lin CHEN, Hsin-Wen SU, Chih-Ching WANG, Chen-Ming LEE, Chung-I YANG, Yi-Feng TING, Jon-Hsu HO, Lien-Jung HUNG, Ping-Wei WANG
  • Patent number: 10872873
    Abstract: A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Chih Chen, Tsung-Yi Yang, Chung-I Hung, Mu-Han Cheng, Tzu-Shin Chen, Su-Yu Yeh
  • Publication number: 20190148333
    Abstract: A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.
    Type: Application
    Filed: January 12, 2018
    Publication date: May 16, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Chih CHEN, Tsung-Yi YANG, Chung-I HUNG, Mu-Han CHENG, Tzu-Shin CHEN, Su-Yu YEH
  • Patent number: 6644078
    Abstract: A lock furnished with a replaceable lock core, in which the inner lock assembly includes a lock core, a sleeve, and a control ring; the inner lock assembly is mounted in a fixed lock casing; the inner lock assembly and the lock casing are assembled together by means of a catch pin; the key normally used for unlocking the lock can only be turned clockwise without hindering the catching function between he inner lock assembly and the lock casing; when an inner lock assembly is replaced, the key should be inserted for unlocking, and then turned counter-clockwise so as to release the catching function between the lock casing and the inner lock assembly; then, pull the key outwards so as to pull out the inner lock assembly simultaneously, and the replacement of a new lock core for the lock casing is done simply.
    Type: Grant
    Filed: January 27, 2003
    Date of Patent: November 11, 2003
    Inventor: Chung-I Hung
  • Patent number: 6584819
    Abstract: A lock with two layers of lock mechanism, which comprises a body casing, an upper lock body, a lower lock body, a connection plate and a key; the chamber of the body casing is used for mounting the two lock bodies; the two lock bodies are connected together with the connection plate; the center of the upper lock body has a key hole for receiving a flat key to plug into a key hole of the lower lock body; the other end of the key has a cylindrical key, which is to be plugged into a ring-shaped key groove; when the key is pushed and turned, both the upper and lower lock bodies will be unlock simultaneously.
    Type: Grant
    Filed: February 6, 2002
    Date of Patent: July 1, 2003
    Inventor: Chung-I Hung