Abstract: A multilayer electronic component includes: a body including dielectric layers and having first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction; side margin portions disposed on the fifth and sixth surfaces, respectively; and external electrodes disposed on the third and fourth surfaces, respectively. The body includes an active portion including internal electrodes disposed alternately with the dielectric layers in the first direction, one of the internal electrodes includes a central portion and an interface portion disposed between the central portion and one of the dielectric layers, and the interface portion and one of the side margin portions include Sn.

Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Abstract: Disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. The semiconductor device comprises a source structure that includes a support source layer, a gate stack structure on the support source layer, a memory channel structure that penetrates through the gate stack structure and the support source layer, and a separation structure that penetrates through the gate stack structure and the support source layer. The support source layer includes a first source part through which the memory channel structure penetrates, and a second source part through which the separation structure penetrates. A top surface of the first source part is at a level lower than that of a top surface of the second source part.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: A bonding tool includes a bonding monitoring system. The bonding monitoring system may include one or more sensors that are configured to generate bonding wave propagation data associated with a bonding operation. As a bond between a top semiconductor substrate and a bottom semiconductor substrate propagates from respective centers to respective perimeters of the top semiconductor substrate and the bottom semiconductor substrate, the one or more sensors of the bonding monitoring system generates the bonding wave propagation data. A controller that communicates with the one or more sensors receives the bonding wave propagation data from the one or more sensors. The controller may monitor the bonding wave propagation based on the bonding wave propagation data and/or may determine various performance parameters of the bonding operation, such as a bonding wave propagation rate and/or a bonding wave propagation uniformity, among other examples.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: A semiconductor device includes a first semiconductor die and a second semiconductor die connected to the first semiconductor die. Each of the first semiconductor die and the second semiconductor die includes a substrate, a conductive bump formed on the substrate and a conductive contact formed on the conductive bump. The conductive contact has an outer lateral sidewall, there is an inner acute angle included between the outer lateral sidewall and the substrate is smaller than 85°, and the conductive contact of the first semiconductor die is connected opposite to the conductive contact of the second semiconductor die.

Abstract: Disclosed is a method for providing real-time bus information by a terminal, the method including: receiving ultra-precise bus information about buses scheduled to arrive at a bus stop from a server; and based on the ultra-precise bus information, displaying at least one bus which moves toward the bus stop and disappears after passing the bus stop on a map area.

Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.

Abstract: An electronic device is provided, and the electronic device includes a base, a cover plate, and a bezel. The base has a sidewall where an opening portion is formed. An airflow selectively passes through the opening portion. The cover plate is pivotally connected to the base. The bezel is movably connected to the cover plate, wherein the bezel is rotated facing the opening portion selectively. The arrangement of the bezel may reduce the gap between the bezel and the down edge of the opening portion of the base, reducing the airflow flowing downward back to the heat-dissipation mechanism in the base. Therefore, the heat-dissipation efficiency of the electronic device is enhanced.

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments isolation regions are formed by modifying a dielectric material of a dielectric layer such that a first portion of the dielectric layer is more readily removed by an etching process than a second portion of the dielectric layer. The modifying of the dielectric material facilitates subsequent processing steps that allow for the tuning of a profile of the isolation regions to a desired geometry based on the different material properties of the modified dielectric material.

Abstract: A multilayer electronic component includes: a body including dielectric layers and having first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction; side margin portions disposed on the fifth and sixth surfaces, respectively; and external electrodes disposed on the third and fourth surfaces, respectively. The body includes an active portion including internal electrodes disposed alternately with the dielectric layers in the first direction, one of the internal electrodes includes a central portion and an interface portion disposed between the central portion and one of the dielectric layers, and the interface portion and one of the side margin portions include Sn.

Abstract: Provided is a method for producing a biomimetic nutrient mixture via biomimicry, comprising: Step (1) providing a mineral nutrient element precursor solution, and Step (2) reacting the mineral nutrient element precursor solution with a natural bio-reactor to obtain the biomimetic nutrient mixture, wherein the biomimetic nutrient mixture comprises a mineral nutrient element and a nutrient solution. The method can produce high biologically active mineral nutrient by an auto-synthesizing natural antioxidant through photosynthesis in the natural bio-reactor containing chlorophyll, which can provide mineral nutrient element without additional extraction procedure or extra component for manufacturing a nutritional supplement.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: Cooling covers including trapezoidal cooling chambers for cooling packaged semiconductor devices and methods of forming the same are disclosed. In an embodiment, a cooling cover for a semiconductor device includes an inlet; an outlet; and a cooling chamber in fluid communication with the inlet and the outlet, the cooling chamber having a trapezoidal shape in a cross-sectional view.

Abstract: The present application relates to a method of operating a capacitance sensing device comprises: calculating a difference of a raw data compared to one of the raw data received in a previous data frame; and performing a comparison calculation based on the raw data and a stored baseline value to determine whether a proximity event has occurred. Under the proximity event, selects one of several baseline value update procedures based on the magnitude of the difference. Thus, the present application effectively avoids the problem of failure to update the baseline value when the object is close to the capacitance sensing device for a long period of time, which may lead to misjudgment of the capacitance sensing device.

Abstract: The disclosure provides an air conditioner capable of smoothly performing communication between an outdoor unit and indoor units using piping communication, and a piping communication method thereof. When communicating between an outdoor unit and indoor units using piping communication, a communication mode is automatically changed to a differential mode and a single mode to set the most suitable communication method for field characteristics according to a communication state, so that communication between the outdoor unit and the indoor units can be performed smoothly. This enables smooth piping communication by increasing a communication success rate even if a physical short between refrigerant pipes occurs in a multi-system air conditioner that connects a plurality of indoor units to a single outdoor unit, or even if there are more branch pipes for branching the refrigerant pipe.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: The present invention is related to a method for proximity sensing and an applied electronic device thereof. The present invention provides that a movement signal is generated according to a detection data, a move baseline data and a move threshold and cooperated with a proximity signal for generating a judgement signal to judge if the human body or the object body is close to the electronic device.

Abstract: A light diffuser includes a main body and first fillers. The first fillers are dispersed in the main body. The first fillers include at least one of ZrO2, Nb2O5, Ta2O5, SixNy, Si, Ge GaP, InP, and PbS, and a diameter of each of the first fillers is in a range from 0.1 ?m to 1 ?m.