Patents by Inventor Chung-Liang Hung

Chung-Liang Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEALING ARTICLE COMPRISING METAL COATING, METHOD OF MAKING AND METHOD OF USING THE SAME
    Publication number: 20240084447
    Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Peng-Cheng Hong, Jun-Liang Pu, W.L. Hsu, Chung-Hao Kao, Chia-Chun Hung, Cheng-Yi Wu, Chin-Szu Lee
  • Sealing article comprising metal coating, method of making and method of using the same
    Patent number: 11920238
    Abstract: A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Peng-Cheng Hong, Jun-Liang Pu, W. L. Hsu, Chung-Hao Kao, Chia-Chun Hung, Cheng-Yi Wu, Chin-Szu Lee
  • Fin field-effect transistor and method of forming the same
    Patent number: 11923433
    Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Liang Pan, Yungtzu Chen, Chung-Chieh Lee, Yung-Chang Hsu, Chia-Yang Hung, Po-Chuan Wang, Guan-Xuan Chen, Huan-Just Lin
  • Magnetic fan-attaching structure and magnetic attaching element thereof
    Publication number: 20080227379
    Abstract: A magnetic fan-attaching structure and a magnetic attaching element are disclosed. The magnetic fan-attaching structure includes a fan body and at least one magnetic attaching element. The fan body has at least one through hole. The magnetic attaching element includes a main body and a magnetic unit located at the main body. The main body has a head portion and a rod body. The head portion has a contacting surface and an attaching surface that are opposite to the contacting surface. The contacting surface is linked to the rod body. The attaching surface is exposed to a side surface of the fan body. The rod body passes through the through hole to combine the magnetic attaching element with the fan body. Thereby, the fan body can be easily and rapidly installed at the desired location by a magnetic-absorbing method. It is convenient for users.
    Type: Application
    Filed: March 15, 2007
    Publication date: September 18, 2008
    Inventor: Chung-Liang Hung