Abstract: A method includes providing a first channel layer and a second channel layer over a substrate; forming a first patterned hard mask covering the first channel layer and exposing the second channel layer; selectively depositing a cladding layer on the second channel layer and not on the first patterned hard mask; performing a first thermal drive-in process; removing the first patterned hard mask; after removing the first patterned hard mask, forming an interfacial dielectric layer on the cladding layer and the first channel layer; and forming a high-k dielectric layer on the interfacial dielectric layer.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: In one aspect, an analog-to-digital converter circuit includes a transimpedance amplifier including a feedback capacitor electrically connected between an inverting or a non-inverting input of the transimpedance amplifier and an output of the transimpedance amplifier. The circuit includes an hourglass switch electrically connected on a first side to a first input and a second input, and electrically connected on a second side to the non-inverting input and the inverting input. A fine input current to the transimpedance amplifier is received at the first and second inputs. In a first mode, the hourglass switch electrically connects the first input to the non-inverting input and the second input to the inverting input, and in a second mode, the hourglass switch electrically connects the second input to the non-inverting input and the first input to the inverting input.

Abstract: Disclosed are biosensor devices, systems, and methods for point-of-care applications.

Abstract: In one aspect, an analog-to-digital converter circuit includes a transimpedance amplifier including a feedback capacitor electrically connected between an inverting or a non-inverting input of the transimpedance amplifier and an output of the transimpedance amplifier. The circuit includes an hourglass switch electrically connected on a first side to a first input and a second input, and electrically connected on a second side to the non-inverting input and the inverting input. A fine input current to the transimpedance amplifier is received at the first and second inputs. In a first mode, the hourglass switch electrically connects the first input to the non-inverting input and the second input to the inverting input, and in a second mode, the hourglass switch electrically connects the second input to the non-inverting input and the first input to the inverting input.

Abstract: In a method for testing booting of servers, the servers are controlled to boot and perform a booting test, and are controlled to quit the booting test and a current state of the booting test is stored in a test log, if the booting of one of the servers is unsuccessful. System logs of all of the servers are saved if the booting times of all of the servers do not exceed the first predefined time. An alarm device is controlled to alarm if the booting time of one of the servers exceeds the first predefined time but does not exceed the second predefined time. And the servers are controlled to quit the booting test if the booting time of one of the servers exceeds the first predefined time and further exceeds the second predefined time.

Abstract: In a method for testing a booting of servers, the servers are controlled to boot to perform a booting test, and are controlled to quit the booting test. A current state of the booting test is stored in a test log, if the booting of one of the servers is unsuccessful. A system log of each server is saved in the storage device if a first component list of each server is identical to the second component list of the server. The servers are controlled to quit the booting test, and a current state of the booting test is recorded in the test log if the component list of one of the servers is not identical to the second component list the server.

Abstract: In a method for testing a booting of servers, the servers are controlled to boot to perform a booting test, and are controlled to quit the booting test. A current state of the booting test is stored in a test log, if the booting of one of the servers is unsuccessful. A system log of each server is saved in the storage device if a first component list of each server is identical to the second component list of the server. The servers are controlled to quit the booting test, and a current state of the booting test is recorded in the test log if the component list of one of the servers is not identical to the second component list the server.

Abstract: In a method for testing booting of servers, the servers are controlled to boot and perform a booting test, and are controlled to quit the booting test and a current state of the booting test is stored in a test log, if the booting of one of the servers is unsuccessful. System logs of all of the servers are saved if the booting times of all of the servers do not exceed the first predefined time. An alarm device is controlled to alarm if the booting time of one of the servers exceeds the first predefined time but does not exceed the second predefined time. And the servers are controlled to quit the booting test if the booting time of one of the servers exceeds the first predefined time and further exceeds the second predefined time.

Abstract: An exemplary electronic element design method includes obtaining a stored transfer function, determining electronic elements, determining information of the determined electronic elements, and obtaining the information of the electronic elements. Next, the method calculates a deviation value of the electronic element with the model number. The method then determines the model number of the electronic element having the greatest deviation value, and further determining the parameter of the electronic element with the determined model number. Next, the method inputs all the determined parameters into the obtained transfer function to generate a real value, and comparing the real value with a stored reference rule to determine whether all of the electronic elements are eligible. If yes, the method then controls a display unit to display information to prompt that all of the electronic elements are eligible.

Abstract: An exemplary electronic element design method includes determining an element value, and determining an element value range. The method searches a stored bill of material table to determine groups of electronic elements, determines the accuracy of the groups of electronic elements, and obtains the information of the determined groups of electronic elements with the determined accuracy. The method also determines the parameters of each model number of each group of electronic element with the determined accuracy, inputs all the determined parameters into an obtained transfer function to generate actual values to determine whether one or more actual values satisfy a reference rule. The method can determine that the electronic elements with the model numbers corresponding to each determined actual value are eligible. The method can control a display unit to display the information of the electronic element with the determined model numbers.