Abstract: A bathtub exercise auxiliary apparatus includes: a first support, a bathtub, a second support, a traction unit and an exercise rack. The first support includes a plurality of base rods, traverse rods, longitudinal support rods, and longitudinal assembling rods. The bathtub is disposed in the first support and includes a trough and a plurality of housing portions. The second support is removably fixed to the first support, located above the bathtub, and includes a plurality of longitudinal connecting rods fixed to the longitudinal assembling rods, two parallel traverse connecting rods connected to the longitudinal connecting rods, two traverse rods connected between the longitudinal connecting rods, and two longitudinal rods connected to the traverse rods. The traction unit is disposed at the connections of the longitudinal rods and the traverse rods. The exercise rack is disposed between the traverse connecting rods, bridges over the trough, and includes a griping portion.

Abstract: A network card with searching ability inquires connection information from all network cards at a network by using a broadcasting manner when it is connected to the same network, and build a connection list according to the received connection information. A user terminal can connect to a management page by one of the network cards on the network by a browser thereon, and check the connection list at the management page upon login successfully. User can obtain connection information of all network cards at the network through the connection list. Therefore, the user terminal can connect to a target network card according to the obtained connection information through a redirection manner. Else, it can also connect to the target network card via the logged network card through a relay manner.

Abstract: A photonic device includes: a first-type III-V group layer; a second-type III-V group layer formed on the first-type III-V group layer; and a multi-quantum well layer disposed between the first-type III-V group layer and the second-type III-V group layer; wherein: the multi-quantum well layer comprises a plurality of active layers interleaved with a plurality of barrier layers such that each barrier layer is separated from adjacent barrier layers by a respective one of the active layer; a material of each barrier layer comprises semiconductor compound devoid of Al element; the barrier layers comprises a first group layers between the first-type III-V group layer and the second-type III-V group layer and a second group layers between the second-type III-V group layer and the first group layers, and a thickness of each barrier layer of the first group layers is greater than that of each barrier layer of the second group layers; and the barrier layers of the first group layers comprise uniform thickness.

Abstract: The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.

Abstract: A network card with searching ability inquires connection information from all network cards at a network by using a broadcasting manner when it is connected to the same network, and build a connection list according to the received connection information. A user terminal can connect to a management page by one of the network cards on the network by a browser thereon, and check the connection list at the management page upon login successfully. User can obtain connection information of all network cards at the network through the connection list. Therefore, the user terminal can connect to a target network card according to the obtained connection information through a redirection manner. Else, it can also connect to the target network card via the logged network card through a relay manner.

Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).

Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).

Abstract: The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.

Abstract: A bathtub exercise auxiliary apparatus includes: a first support, a bathtub, a second support, a traction unit and an exercise rack. The first support includes a plurality of base rods, traverse rods, longitudinal support rods, and longitudinal assembling rods. The bathtub is disposed in the first support and includes a trough and a plurality of housing portions. The second support is removably fixed to the first support, located above the bathtub, and includes a plurality of longitudinal connecting rods fixed to the longitudinal assembling rods, two parallel traverse connecting rods connected to the longitudinal connecting rods, two traverse rods connected between the longitudinal connecting rods, and two longitudinal rods connected to the traverse rods. The traction unit is disposed at the connections of the longitudinal rods and the traverse rods. The exercise rack is disposed between the traverse connecting rods, bridges over the trough, and includes a griping portion.

Abstract: The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.

Abstract: The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.

Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).

Abstract: A bathtub exercise auxiliary apparatus includes a housing trough, a sitting portion and an ancillary support installed on the housing trough. The housing trough has a surrounding wall, a bottom surface and an opening remote from the bottom surface. The sitting portion is connected to the bottom surface. The ancillary support has a plurality of connection posts fastening to the housing trough, at least one holding rack connecting vertically to the connection posts and at least one exercise rack connecting to the holding rack and straddling the opening. The apparatus provides a private aquatic exercise environment to allow a user to do exercises or stretching movements via the ancillary support installed on the housing trough to make user's body stronger or provide muscle rehabilitation therapy.