Abstract: A semiconductor structure includes a substrate and a stack of p-n junction structures embedded in the substrate. The semiconductor structure includes a semiconductor fin protruding from the substrate. The semiconductor structure includes a pair of source/drain structures disposed in the semiconductor fin. The semiconductor structure includes a gate structure over a channel region of the semiconductor fin and interposed between the pair of source/drain structures.

Abstract: A semiconductor cell structure includes a first complementary metal oxide silicon (CMOS) a second CMOS, a first conducting element, and a second conducting element. The first and second CMOSs are disposed on the substrate and a reference voltage is provided to the first CMOS and the second CMOS respectively through the first conducting element and the second conducting element. A product of a width of the first conducting element multiplied by a channel length of the first CMOS is positively related to a product of a width of the second conducting element multiplied by a channel length of the second CMOS.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: A three-dimensional integrated circuit testing apparatus comprises a probe card configured to couple a device-under-test of a three-dimensional integrated circuit with an automatic testing equipment board having a plurality of testing modules, wherein the probe card comprises a plurality of known good dies of the three-dimensional integrated circuit, a plurality of interconnects of the three-dimensional integrated circuit and a plurality of probe contacts, wherein the probe contacts are configured to couple the probe card with testing contacts of the device-under-test of the three-dimensional integrated circuit.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: An interposer of a package system includes a first probe pad disposed adjacent to a first surface of the interposer. A second probe pad is disposed adjacent to the first surface of the interposer. A first bump of a first dimension is disposed adjacent to the first surface of the interposer. The first bump is electrically coupled with the first probe pad. A second bump of the first dimension is disposed adjacent to the first surface of the interposer. The second bump is electrically coupled with the second probe pad. The second bump is electrically coupled with the first bump through a redistribution layer (RDL) of the interposer.

Abstract: One or more techniques or systems for incorporating a common template into a system on chip (SOC) design are provided herein. For example, a common template mask set is generated based on a first set of polygon positions from a first vendor and a second set of polygon positions from a second vendor. A third party creates a third party SOC design using a set of design rules generated based on the common template mask set. The common template is fabricated based on the third party SOC design using the common template mask set. Because the common template is formed using the common template mask set and because the common template mask set is based on polygon positions from both the first vendor and the second vendor, a part can be connected to the SOC regardless of whether the part is sourced from the first vendor or the second vendor.

Abstract: One or more techniques or systems for incorporating a common template into a system on chip (SOC) design are provided herein. For example, a common template mask set is generated based on a first set of polygon positions from a first vendor and a second set of polygon positions from a second vendor. A third party creates a third party SOC design using a set of design rules generated based on the common template mask set. The common template is fabricated based on the third party SOC design using the common template mask set. Because the common template is formed using the common template mask set and because the common template mask set is based on polygon positions from both the first vendor and the second vendor, a part can be connected to the SOC regardless of whether the part is sourced from the first vendor or the second vendor.

Abstract: One or more techniques or systems for incorporating a common template into a system on chip (SOC) design are provided herein. For example, a common template mask set is generated based on a first set of polygon positions from a first vendor and a second set of polygon positions from a second vendor. A third party creates a third party SOC design using a set of design rules generated based on the common template mask set. The common template is fabricated based on the third party SOC design using the common template mask set. Because the common template is formed using the common template mask set and because the common template mask set is based on polygon positions from both the first vendor and the second vendor, a part can be connected to the SOC regardless of whether the part is sourced from the first vendor or the second vendor.

Abstract: One or more techniques or systems for incorporating a common template into a system on chip (SOC) design are provided herein. For example, a common template mask set is generated based on a first set of polygon positions from a first vendor and a second set of polygon positions from a second vendor. A third party creates a third party SOC design using a set of design rules generated based on the common template mask set. The common template is fabricated based on the third party SOC design using the common template mask set. Because the common template is formed using the common template mask set and because the common template mask set is based on polygon positions from both the first vendor and the second vendor, a part can be connected to the SOC regardless of whether the part is sourced from the first vendor or the second vendor.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: An interposer of a package system includes a first probe pad disposed adjacent to a first surface of the interposer. A second probe pad is disposed adjacent to the first surface of the interposer. A first bump of a first dimension is disposed adjacent to the first surface of the interposer. The first bump is electrically coupled with the first probe pad. A second bump of the first dimension is disposed adjacent to the first surface of the interposer. The second bump is electrically coupled with the second probe pad. The second bump is electrically coupled with the first bump through a redistribution layer (RDL) of the interposer.

Abstract: A method of designing an integrated circuit includes providing an integrated circuit design including a power network. A voltage drop mitigation system is provided, which includes a power strap enhancer configured to automatically find a source node and a terminal node in the power network. A redundant strap for the power network using the voltage drop mitigation system is added, wherein the redundant strap interconnects the source node and the terminal node. After the step of adding the redundant strap, dummy patterns may be added.

Abstract: A method of designing an integrated circuit includes providing an integrated circuit design including a power network. A voltage drop mitigation system is provided, which includes a power strap enhancer configured to automatically find a source node and a terminal node in the power network. A redundant strap for the power network using the voltage drop mitigation system is added, wherein the redundant strap interconnects the source node and the terminal node. After the step of adding the redundant strap, dummy patterns may be added.