Patents by Inventor Chung Ta Chen

Chung Ta Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IMAGING LENS ASSEMBLY MODULE, CAMERA MODULE AND ELECTRONIC DEVICE
    Publication number: 20240111139
    Abstract: An imaging lens assembly module includes a lens barrel, a catadioptric lens assembly, an imaging lens assembly, a first fixing element and a second fixing element. The lens barrel has a first relying surface and a second relying surface, which face towards an object side of the imaging lens assembly module. The catadioptric lens assembly relies on the first relying surface. The imaging lens assembly is disposed on an image side of the catadioptric lens assembly, and relies on the second relying surface. The first fixing element is for fixing the catadioptric lens assembly to the lens barrel. The second fixing element is for fixing the imaging lens assembly to the lens barrel. The catadioptric lens assembly is for processing at least twice internal reflections of an image light in the imaging lens assembly module, and for providing optical refractive power.
    Type: Application
    Filed: September 26, 2023
    Publication date: April 4, 2024
    Inventors: Lin-An CHANG, Chung Hao CHEN, Wen-Yu TSAI, Ming-Ta CHOU
  • Capping Layers in Metal Gates of Transistors
    Publication number: 20220208984
    Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.
    Type: Application
    Filed: March 21, 2022
    Publication date: June 30, 2022
    Inventors: Tsung-Ta Tang, Yi-Ting Wang, Chung Ta Chen, Hsien-Ming Lee
  • Capping layers in metal gates of transistors
    Patent number: 11282938
    Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: March 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Ta Tang, Yi-Ting Wang, Chung Ta Chen, Hsien-Ming Lee
  • Capping Layers in Metal Gates of Transistors
    Publication number: 20200105895
    Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.
    Type: Application
    Filed: July 1, 2019
    Publication date: April 2, 2020
    Inventors: Tsung-Ta Tang, Yi-Ting Wang, Chung Ta Chen, Hsien-Ming Lee