Patents by Inventor Chung Tien-Tung

Chung Tien-Tung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240178319
    Abstract: A semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. At least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. The first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. The third dopant species forms a plurality of second dipole elements having a second polarity. A first concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the p-type transistor is different from a second concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the n-type transistor.
    Type: Application
    Filed: February 2, 2024
    Publication date: May 30, 2024
    Inventors: Hsiang-Pi Chang, Yen-Tien Tung, Dawei Heh, Chung-Liang Cheng, I-Ming Chang, Yao-Sheng Huang, Tzer-Min Shen, Huang-Lin Chao
  • Patent number: 11990522
    Abstract: A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Tien Tung, Szu-Wei Huang, Zhi-Ren Xiao, Yin-Chuan Chuang, Yung-Chien Huang, Kuan-Ting Liu, Tzer-Min Shen, Chung-Wei Wu, Zhiqiang Wu
  • Patent number: 7565741
    Abstract: The present invention provides a method for designing lobe-type rotors which enables a defined rotor and a conjugate rotor having three or more than three lobes intermeshing and conjugating to each other and by setting suitable parameters to generate curve portions of a single lobe of the defined rotor as a pattern including a curve E, an arc A, an arc B, an arc F, and a straight line Y; the main feature of the present invention is that a radius rB of the arc B is defined by following equation: r B + ( R - r B ) ? sin ? ? ? = D 2 r B = D / 2 - R ? ? sin ? ? ? 1 - sin ? ? ? moreover, the straight line Y is the external common tangent line of the arc B and the arc F, and respectively getting two tangent points therefrom to be defined as two end points of the straight line Y.
    Type: Grant
    Filed: January 25, 2006
    Date of Patent: July 28, 2009
    Assignee: Liung Feng Industrial Co., Ltd.
    Inventors: Chung Tien-Tung, Lin Heng-I
  • Patent number: 7565742
    Abstract: The present invention provides a method for designing lobe-type rotors which enables a defined rotor and a conjugate rotor with three or more than three lobes intermeshing and conjugating to each other; by setting suitable parameters to generate a curve portion of a single lobe of the defined rotor as a pattern including a curve E, an arc A, an arc B, a straight line Y, an arc C and an arc F, then imaging (N-1) copy of the curve portion in which N represents number of lobes and is bigger than or equal to three, and then respectively rotating each curve portion in sequence from an appropriate degree computed by 360/N to a terminal degree computed by (N-1)*360/N; whereby to integrately form the defined rotor with three or more than three lobes.
    Type: Grant
    Filed: January 25, 2006
    Date of Patent: July 28, 2009
    Assignee: Liung Feng Industrial Co., Ltd.
    Inventors: Chung Tien-Tung, Lin Heng-I
  • Patent number: 7255545
    Abstract: A double-lobe type rotor design process includes a process for forming a defined rotor and a process for forming a conjugate rotor, wherein the defined rotor and the conjugate rotor intermesh and conjugate to each other. The rotor profile curves suitably for the completed operation period of carryover, suction and exhaust could be well defined by proper parameters, thereby optimizing rotor performance, enhancing compression ratio, providing a smooth suction and exhaust process and avoiding noise and vibration.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: August 14, 2007
    Assignee: Liung Feng Industrial Co., Ltd.
    Inventors: Chung Tien-Tung, Lin Heng-I, Chuang Feng-Ming
  • Publication number: 20070050055
    Abstract: The present invention provides a method for designing lobe-type rotors which enables a defined rotor and a conjugate rotor with three or more than three lobes intermeshing and conjugating to each other; by setting suitable parameters to generate a curve portion of a single lobe of the defined rotor as a pattern including a curve E, an arc A, an arc B, a straight line Y, an arc C and an arc F, then imaging (N-1) copy of the curve portion in which N represents number of lobes and is bigger than or equal to three, and then respectively rotating each curve portion in sequence from an appropriate degree computed by 360/N to a terminal degree computed by (N-1)*360/N; whereby to integrately form the defined rotor with three or more than three lobes.
    Type: Application
    Filed: January 25, 2006
    Publication date: March 1, 2007
    Inventors: Chung Tien-Tung, Lin Heng-I