Abstract: Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming an interconnect structure over a substrate. The forming the interconnect structure over the semiconductor device structure includes forming a dielectric layer, then performing an annealing process, then forming one or more openings in the dielectric layer, then performing a first ultraviolet (UV) curing process, and then forming conductive features in the one or more openings.

Abstract: A thin film photovoltaic structure has a substrate, a first conductive layer, a photovoltaic layer, a second conductive layer, multiple serial connection conductive layers and multiple first insulating areas. By using the serial connection conductive layer, each width between each adjacent serially connected photovoltaic structures is reduced, and an effective area of the thin film photovoltaic structure for collecting optic energy is increased, thus enhancing a geometry fill factor of the thin film photovoltaic structure. Further, by using the serial connection conductive layer and the first insulating area to form contact overlap areas in an overlapping arrangement, it can effectively protect conductive areas in the first conductive layer when etching the second conductive layer during the manufacturing process, which prevents the conductive areas from being damaged to not act as electrodes, and efficiently increases a manufacture yielding rate of the thin film photovoltaic structure.

Abstract: An electrode interface layer material is generated by using a modifier to react with polyethyleneimine, and the amine group on the polyethyleneimine is converted into an ammonium group by reacting with the modifier to form a zwitterionic polyethyleneimine. When an active layer containing a non-fullerene material is formed on the surface of the electrode interface layer, or when the surface of the electrode interface layer is contacted with a non-fullerene material, the possibility that the non-fullerene material is destroyed by the amine groups in the electrode interface layer can be reduced. In addition, the aforementioned electrode interface layer material or zwitterionic polymer is used for an organic photovoltaic device.

Abstract: An organoluminescent compound. The compound has formula (I) wherein X1 and X2 independently represent C10-25 aryl, heteroaryl, stilbenyl, silylaryl, or arylsilyl; n represents an integer of 0 to 2; L represents aryl or heteroaryl; and A1, A2, and A3 independently represent aryl or heteroaryl. The invention also provides an organic light-emitting diode and a display utilizing the organoluminescent compound.

Abstract: An organic electro-luminescent device. The device comprises two electrodes and an organic electro-luminescent structure interposed therebetween. The electrodes are disposed on a substrate, one serving as an anode and the other as a cathode. The organic electro-luminescent structure comprises a fluorescent emissive layer, a phosphorescent emissive layer and a nondoped organic material layer interposed therebetween. The phosphorescent emissive layer has a host material. The nondoped organic material layer has a highest occupied molecular orbital (HOMO) energy level no higher than that of the host material in the phosphorescent emissive layer.

Abstract: A method for fabrication organic light emitting diode (OLED) displays. A white light OLED element is formed on the first substrate. A micro-cavity layer is formed on a second substrate. A color filter is formed on the micro-cavity layer. The first and the second substrates are assembled, wherein the light of white OLED element passes through the color filter and the micro-cavity layer.

Abstract: An organic electroluminescent device is provided. The device includes a substrate, an anode, an emitting layer and a cathode. The anode is disposed on the substrate, the emitting layer is disposed on the anode, and the cathode is disposed on the emitting layer. The emitting layer is constructed by a dark-blue emitting layer/light-blue emitting layer/reddish orange emitting layer or a light-blue emitting layer/dark-blue emitting layer/reddish orange emitting layer. Since the dark-blue emitting layer has an excellent bright blue light color and high brightness, and the light-blue emitting layer has a long service life, and therefore, organic electroluminescent device of the present invention has an excellent blue light color, high brightness and long service life.

Abstract: A high contrast organic light-emitting device (OLED) includes a composite electron transport layer including a generally transparent electron transport layer and a light-absorbent electron transport layer formed of buckminsterfullerene. The light-absorbent electron transport layer absorbs environmental light and the OLED provides an undistorted display with high contrast. The light-absorbent electron transport layer may be disposed directly between the generally transparent electron transport layer which may be formed of Alq, and an LiF electron injection layer of a metallic cathode.

Abstract: Organic light emitting devices include an anode, a cathode and a plurality of organic light emitting units. The adjacent organic light emitting units are separated by a charge transfer layer formed of various fullerenes in combination. The charge transfer layer may be a relatively homogenous layer that is a mixture comprising fullerene.

Abstract: An emission layer of an organic light-emitting diode has a host and a dopant.

Abstract: An organic electro-luminescent device. The device comprises two electrodes and an organic electro-luminescent structure interposed therebetween. The electrodes are disposed on a substrate, one serving as an anode and the other as a cathode. The organic electro-luminescent structure comprises a fluorescent emissive layer, a phosphorescent emissive layer and a nondoped organic material layer interposed therebetween. The phosphorescent emissive layer has a host material. The nondoped organic material layer has a highest occupied molecular orbital (HOMO) energy level no higher than that of the host material in the phosphorescent emissive layer.

Abstract: A divided shadow mask for use in fabricating an organic light emitting diode display including a first shadow mask section having a plurality of openings; and at least a second shadow mask section having a plurality of openings.

Abstract: An anthracene compound for an organic electroluminescent device, having formula (I) or (II) wherein R1, R2, R3, R4, R5, and R6 are each individually an unsubstituted or substituted aryl group having 6 to 20 carbon atoms, an unsubstituted or substituted heteroaryl group having 6 to 20 carbon atoms, or an unsubstituted or substituted alkyl group having 1 to 12 carbon atoms, wherein the substituent is C1-10 alkyl, C1-10 alkoxy, or halogen.

Abstract: A bottom and top emission OLED structure includes: first and second anodes; first and second organic light-emitting layers disposed between the first and second anodes. A first electrode may be disposed between the first and second organic light-emitting layers or first and second electrically isolated electrodes may be disposed between the first and second organic light-emitting layers.

Abstract: Shadow masks capable of full-color process of display elements are provided. An exemplary embodiment of a shadow mask comprises a main body having a plurality of openings formed therethrough. A plurality of recesses formed over the main body, located adjacent to the openings. In an exemplary embodiment, the recesses are respectively defined by a trench formed in the main body and the trench is integrated with the main body. In another exemplary embodiment, the recesses are defined by a plurality of ribs protruding over a surface of the main body.

Abstract: This invention discloses a phosphorescent OLED having a light emitting layer thereof contains a host material and dopant materials comprising phosphorescent dopant and triarylamine. The triarylamine has a HOMO value less than that of the host material, as Balq (5.7 eV), thereby decreasing driving voltage and increasing lifetime of the OLED devices.

Abstract: A metal complex incorporated in the organic electroluminescent device as a dopant in a light emitting layer, a hole transfer layer, or an electron blocking layer. The metal complex is represented by the formula wherein M represents a transition metal whose atomic number of the periodic table is greater than 40; m is an integer equal to or smaller than the ligand numbers of M, n is an integer smaller than m; R1, R2, R3, and A are independently selected from the group consisting of a halogen atom, a cyano group, a phenyl group, a heterocyclic group, a CF3 group, a substituted or unsubstituted C1-C30 alkyl or alkoxy group, a hydroxy group, a thiol group, a substituted or un-substituted C2-C30 alkenyl group, a substituted or unsubstituted C6-C30 aryl group, and a haloalkyl group; Y1 represents an atomic group having a nitrogen-containing heterocyclic ring.

Abstract: A double-sided organic light-emitting display includes at least one organic light-emitting display of top emission type stacked over another organic light-emitting display.

Abstract: An electroluminescence display device that comprises an array of pixels, an electroluminescence device formed in each of the pixels, a first electrode formed in the electroluminescence device, a second electrode formed in the electroluminescence device, an electroluminescence layer formed in the electroluminescence device between the first and second electrodes to emit light through the first and second electrodes, a plurality of scan drivers to activate the array of pixels, and a control unit to control a scanning sequence of the plurality of scan drivers, the electroluminescence display device further comprising a first mode wherein the array of pixels are activated in a sequence from a first row to a last row, and a second mode wherein the array of pixels are activated in a sequence from the last row to the first row.

Abstract: A method for fabrication organic light emitting diode (OLED) displays. A white light OLED element is formed on the first substrate. A micro-cavity layer is formed on a second substrate. A color filter is formed on the micro-cavity layer. The first and the second substrates are assembled, wherein the light of white OLED element passes through the color filter and the micro-cavity layer.