Abstract: The present invention provides a ferroelectric memory device and a manufacturing method forming the same capable of preventing characteristic deterioration of a ferroelectric layer due to an plasma. The ferroelectric memory device divided into a first area including a plurality of ferroelectric capacitor and a second area not including the ferroelectric capacitor, includes a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; and a bottom electrode of the ferroelectric capacitor formed in the first insulating layer, wherein a top surface of the bottom electrode is planarized with the first insulating layer; a ferroelectric layer of the ferroelectric capacitor covering not only the bottom electrode but also all the first area; and a top electrode of the ferroelectric capacitor formed on the ferroelectric layer and overlapped with the bottom electrode.

Abstract: The present invention provides a ferroelectric memory device and a manufacturing method forming the same capable of preventing characteristic deterioration of a ferroelectric layer due to an plasma. The ferroelectric memory device divided into a first area including a plurality of ferroelectric capacitor and a second area not including the ferroelectric capacitor, includes a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; and a bottom electrode of the ferroelectric capacitor formed in the first insulating layer, wherein a top surface of the bottom electrode is planarized with the first insulating layer; a ferroelectric layer of the ferroelectric capacitor covering not only the bottom electrode but also all the first area; and a top electrode of the ferroelectric capacitor formed on the ferroelectric layer and overlapped with the bottom electrode.

Abstract: The present invention provides a ferroelectric memory device and a manufacturing method forming the same capable of preventing characteristic deterioration of a ferroelectric layer due to an plasma. The ferroelectric memory device divided into a first area including a plurality of ferroelectric capacitor and a second area not including the ferroelectric capacitor, includes a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; and a bottom electrode of the ferroelectric capacitor formed in the first insulating layer, wherein a top surface of the bottom electrode is planarized with the first insulating layer; a ferroelectric layer of the ferroelectric capacitor covering not only the bottom electrode but also all the first area; and a top electrode of the ferroelectric capacitor formed on the ferroelectric layer and overlapped with the bottom electrode.

Abstract: The present invention provides a ferroelectric memory device and a manufacturing method forming the same capable of preventing characteristic deterioration of a ferroelectric layer due to an plasma. The ferroelectric memory device divided into a first area including a plurality of ferroelectric capacitor and a second area not including the ferroelectric capacitor, includes a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; and a bottom electrode of the ferroelectric capacitor formed in the first insulating layer, wherein a top surface of the bottom electrode is planarized with the first insulating layer; a ferroelectric layer of the ferroelectric capacitor covering not only the bottom electrode but also all the first area; and a top electrode of the ferroelectric capacitor formed on the ferroelectric layer and overlapped with the bottom electrode.

Abstract: There is provided a ferroelectric capacitor of semiconductor device including a SBT ferroelectric thin film. The SBT ferroelectric thin film has double layer structure in which each layer is different in detail crystalline structure from each other fabricated at different condition of thermal treatment. The first SBT thin film is formed on the bottom electrode of capacitor by spin coating SBT precursor, baking, performing rapid thermal treatment (RTP) and furnace annealing, in turn, to form conventional crystalline grain structure. The second SBT thin film is formed on the first SBT thin film by spin coating SBT precursor with lower viscosity, baking and performing RTP, in turn, to form only crystalline nuclei. The double layer structure of the SBT ferroelectric thin film allows the SBT film to be denser and improves the surface roughness.