Patents by Inventor Chung-Yi Chang
Chung-Yi Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240178102Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.Type: ApplicationFiled: April 21, 2023Publication date: May 30, 2024Inventors: Chun-Ti LU, Hao-Yi TSAI, Chiahung LIU, Ken-Yu CHANG, Tzuan-Horng LIU, Chih-Hao CHANG, Bo-Jiun LIN, Shih-Wei CHEN, Pei-Rong NI, Hsin-Wei HUANG, Zheng GangTsai, Tai-You LIU, Steve SHIH, Yu-Ting HUANG, Steven SONG, Yu-Ching WANG, Tsung-Yuan YU, Hung-Yi KUO, CHung-Shi LIU, Tsung-Hsien CHIANG, Ming Hung TSENG, Yen-Liang LIN, Tzu-Sung HUANG, Chun-Chih CHUANG
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Publication number: 20240162318Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.Type: ApplicationFiled: January 26, 2024Publication date: May 16, 2024Inventors: Min-Kun DAI, Wei-Gang CHIU, I-Cheng CHANG, Cheng-Yi WU, Han-Ting TSAI, Tsann LIN, Chung-Te LIN
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Publication number: 20240162208Abstract: A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.Type: ApplicationFiled: December 7, 2022Publication date: May 16, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Da-Jun Lin, Chih-Wei Chang, Fu-Yu Tsai, Bin-Siang Tsai, Chung-Yi Chiu
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Patent number: 11961892Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.Type: GrantFiled: June 10, 2022Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Jean-Pierre Colinge, Chun-Hsiung Lin, Wai-Yi Lien, Ying-Keung Leung
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Publication number: 20240113071Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.Type: ApplicationFiled: January 5, 2023Publication date: April 4, 2024Inventors: Chung-Shi Liu, Mao-Yen Chang, Yu-Chia Lai, Kuo-Lung Pan, Hao-Yi Tsai, Ching-Hua Hsieh, Hsiu-Jen Lin, Po-Yuan Teng, Cheng-Chieh Wu, Jen-Chun Liao
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Publication number: 20240103377Abstract: A composition and method for removing a metal-containing layer or portion of a layer of a pellicle of an EUV mask are provided. The composition includes water; one or more oxidizing agents; and one or more acids. The method includes forming one or more layers over a silicon substrate with at least one of those layers includes a metal containing layer and removing the metal containing layer by contacting the metal containing layer with the composition of the disclosed and claimed subject matter.Type: ApplicationFiled: October 15, 2020Publication date: March 28, 2024Applicant: Versum Materials US, LLCInventors: CHAO-HSIANG CHEN, CHUNG-YI CHANG, YI-CHIA LEE, WEN DAR LIU
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Patent number: 11935935Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.Type: GrantFiled: November 11, 2021Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Min-Kun Dai, Wei-Gang Chiu, I-Cheng Chang, Cheng-Yi Wu, Han-Ting Tsai, Tsann Lin, Chung-Te Lin
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Patent number: 11929257Abstract: Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent.Type: GrantFiled: March 10, 2020Date of Patent: March 12, 2024Assignee: Versum Materials US, LLCInventors: Chung Yi Chang, Wen Dar Liu, Yi-Chia Lee
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Patent number: 11929417Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.Type: GrantFiled: June 30, 2022Date of Patent: March 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Jean-Pierre Colinge, Chun-Hsiung Lin, Wai-Yi Lien, Ying-Keung Leung
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Publication number: 20240074027Abstract: A capacitor capable of releasing reactive oxygen species and reactive nitrogen species after powering of claim 1 is composed of the dielectric material. A plurality of through holes are designed on the capacitor, the through holes being used as air gaps to supply plasma gas and blow a fan to increase the gas flow, and the voltage being connected to the two corresponding electrode edges of the capacitor so that the capacitor generating a heating temperature (lower than 200 degrees Celsius). Thereby, after the capacitor is perforated to form honeycomb shape and powered, the air surrounding the capacitor flowing through the capacitor is ionized to the oxygen ion and nitrogen ion via heating and charge-discharge, generates plasma at room temperature and atmospheric pressure and releases the reactive oxygen ions and reactive nitrogen ions healing and helpful for body healing.Type: ApplicationFiled: August 23, 2022Publication date: February 29, 2024Inventors: Chung-Tai Chang, Chia-Hao Chang, Ting-Yi Chang
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Patent number: 11890984Abstract: A vehicle lamp having a switching structure for low-beam and high-beam headlights is provided. The vehicle lamp includes a heat dissipating device, an LED light source, an electromagnet, a reflector assembly, a lens unit, a light-shaping plate, a driving rod, and an intermediate plate. The LED light source and the electromagnet are disposed on the heat dissipating device, and the light-shaping plate is rotatably disposed on the electromagnet. The driving rod is disposed between the electromagnet and the light-shaping plate, and the electromagnet drives the driving rod to synchronously drive the light-shaping plate to be moved to a first position or a second position. The intermediate plate is replaceably connected between the lens unit and the heat dissipating device.Type: GrantFiled: December 29, 2022Date of Patent: February 6, 2024Assignee: SONAR AUTO PARTS CO., LTD.Inventor: Chung-Yi Chang
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Patent number: 11852314Abstract: The vehicle lamp having a dipped and main beam headlight switching structure includes a heat-dissipating device, an LED light source, an electromagnet, a light-reflecting assembly, a lens assembly, a light-shaping plate and a driving rod. The LED light source and the electromagnet are disposed on the heat-dissipating device. The light-shaping plate is rotatably disposed above the electromagnet. The driving rod is disposed between the electromagnet and the light-shaping plate. The electromagnet is configured to drive the driving rod to move the light-shaping plate to the first position or the second position, so as to change the reflected light to form near light or far light. An empty space is formed between the lens assembly and the heat-dissipating device for accommodating components.Type: GrantFiled: January 30, 2023Date of Patent: December 26, 2023Assignee: SONAR AUTO PARTS CO., LTD.Inventor: Chung-Yi Chang
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Patent number: 11828428Abstract: A vehicle lamp structure includes a heat dissipating device, an LED light source, a reflector, a supporting frame, a light-blocking plate, and a lens unit. The LED light source, the reflector, and the supporting frame are disposed on the heat dissipating device. The LED light source includes a substrate and LED units that are arranged along a lengthwise direction. The reflector has reflection surfaces that are respectively located above the LED units such that light emitted by the LED units is reflected by the reflection surfaces. The light-blocking plate is disposed in the supporting frame and has a frame body and at least one baffle, and the baffle is disposed in the frame body, such that through holes are formed in the frame body so that the light reflected by the plurality of reflection surfaces can pass through the through holes, respectively.Type: GrantFiled: January 30, 2023Date of Patent: November 28, 2023Assignee: SONAR AUTO PARTS CO., LTD.Inventor: Chung-Yi Chang
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Patent number: 11739900Abstract: A vehicle lamp having a switching structure for low-beam and high-beam headlights is provided. The vehicle lamp includes a heat dissipating device, an LED light source, an electromagnet, a reflector, a lens unit, a light-shaping plate, a driving rod, and an adjustment rod. The LED light source and the electromagnet are disposed on the heat dissipating device, and the light-shaping plate is rotatably disposed above the electromagnet. The driving rod is disposed between the electromagnet and the light-shaping plate. The electromagnet drives the driving rod to synchronously drive the light-shaping plate to be moved to a first position or a second position. The adjustment rod is disposed on the heat dissipating device, one end of the adjustment rod abuts against the light-shaping plate, and another end of the adjustment rod is exposed from the heat dissipating device.Type: GrantFiled: December 22, 2022Date of Patent: August 29, 2023Assignee: SONAR AUTO PARTS CO., LTD.Inventor: Chung-Yi Chang
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Publication number: 20230002675Abstract: The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.Type: ApplicationFiled: September 30, 2020Publication date: January 5, 2023Applicant: Versum Materials US, LLCInventors: CHUNG-YI CHANG, WEN DAR LIU, YI-CHIA LEE
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Publication number: 20220367199Abstract: Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent.Type: ApplicationFiled: March 10, 2020Publication date: November 17, 2022Applicant: VERSUM MATERIALS US, LLCInventors: CHUNG YI CHANG, WEN DAR LIU, YI-CHIA LEE
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Publication number: 20220298417Abstract: Described herein is an etching solution suitable for the selective removal of silicon over p-doped silicon and/or silicon-germanium from a microelectronic device, having water; at least one of NH4OH or a quaternary ammonium hydroxide; at least one compound selected from benzoquinone or a derivative of benzoquinone; quinoline or a derivative of quinoline; an unsubstituted or substituted C6-20 aliphatic acid; a C4-12 alkylamine; and a polyalkylenimine; optionally at least one water-miscible organic solvent; and optionally, at least one compound selected from an alkanolamine and a polyamine.Type: ApplicationFiled: June 12, 2020Publication date: September 22, 2022Applicant: Versum Materials US, LLCInventors: Wen Dar Liu, YI-CHIA LEE, CHUNG-YI CHANG, AIPING WU, LAISHENG SUN
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Patent number: 11180697Abstract: Described herein is an etching solution suitable for the selective removal of polysilicon over silicon oxide from a microelectronic device, which comprises: water; at least one of a quaternary ammonium hydroxide compound; optionally at least one alkanolamine compound; a water-miscible solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, a polyamine, a nitrogen-containing heterocyclic compound, a nitrogen-containing aromatic compound, or a nitrogen-containing heterocyclic and aromatic compound; and optionally, a surfactant.Type: GrantFiled: November 12, 2019Date of Patent: November 23, 2021Assignee: VERSUM MATERIALS US, LLCInventors: Wen Dar Liu, Yi-Chia Lee, Chung-Yi Chang
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Patent number: D971462Type: GrantFiled: November 11, 2020Date of Patent: November 29, 2022Assignee: SONAR AUTO PARTS CO., LTD.Inventor: Chung-Yi Chang
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Patent number: D987863Type: GrantFiled: November 11, 2020Date of Patent: May 30, 2023Assignee: SONAR AUTO PARTS CO., LTD.Inventor: Chung-Yi Chang