Abstract: A water transfer apparatus and a wafer transfer method are provided. The wafer transfer apparatus is provided with a heating component and a cooling component, the heating component heats the wafer carrying component to a temperature the same as the wafer when it is just unloaded from the rapid thermal anneal tool, and the cooling component cools the wafer carrying component along with the wafer to room temperature, thereby avoiding the large temperature difference between the wafer and the wafer transfer apparatus, preventing the high thermal stress induced inside the wafer during wafer transfer, avoiding wafer breakage, and ensuring the completeness of the wafer.

Abstract: The present invention discloses a semiconductor device, comprising: a substrate, an insulating isolation layer formed on the substrate, a first active region layer and a second active region layer formed in the insulating isolation layer, characterized in that the carrier mobility of the first active region layer and/or second active region layer is higher than that of the substrate. In accordance with the semiconductor device and the manufacturing method thereof in the present invention, an active region formed of a material different from that of the substrate is used, the carrier mobility in the channel region is enhanced, thereby the device response speed is substantially improved and the device performance is enhanced greatly. Furthermore, unlike the existing STI manufacturing process, for the present invention, an STI is formed first, and then filling is performed to form an active region, thus avoiding the problem of generation of holes in STI, and improving the device reliability.

Abstract: The present invention discloses a method for manufacturing a semiconductor device, comprising: forming an insulating isolation layer on a substrate; forming an insulating isolation layer trench in the insulating isolation layer; forming an active region layer in the insulating isolation layer trench; forming a semiconductor device structure in and above the active region layer; characterized in that the carrier mobility of the active region layer is higher than that of the substrate. Said active region is formed of a material different from that of the substrate, the carrier mobility in the channel region is enhanced, thereby the device response speed is improved and the device performance is enhanced. Unlike the existing STI manufacturing process, for the present invention, an STI is formed first, and then filling is performed to form an active region, thus avoiding the problem of generation of holes in STI, and improving the device reliability.

Abstract: The present invention discloses a semiconductor device, comprising: a substrate, an insulating isolation layer formed on the substrate, a first active region layer and a second active region layer formed in the insulating isolation layer, characterized in that the carrier mobility of the first active region layer and/or second active region layer is higher than that of the substrate. In accordance with the semiconductor device and the manufacturing method thereof in the present invention, an active region formed of a material different from that of the substrate is used, the carrier mobility in the channel region is enhanced, thereby the device response speed is substantially improved and the device performance is enhanced greatly. Furthermore, unlike the existing STI manufacturing process, for the present invention, an STI is formed first, and then filling is performed to form an active region, thus avoiding the problem of generation of holes in STI, and improving the device reliability.

Abstract: The present invention discloses a semiconductor device and method of manufacturing the same, comprising: forming an insulating isolation layer on a substrate; forming an insulating isolation layer trench in the insulating isolation layer; forming an active region layer in the insulating isolation layer trench; and forming a semiconductor device structure in and above the active region layer, wherein the carrier mobility of the active region layer is higher than that of the substrate. In accordance with the semiconductor device and the manufacturing method thereof in the present invention, an active region formed of a material different from that of the substrate is used, the carrier mobility in the channel region is enhanced, thereby the device response speed is substantially improved and the device performance is enhanced greatly.

Abstract: The invention proposes a thermal oxidation system, which comprises: a reaction furnace for preparing silicon oxide by wet oxidation; a vapor generating chamber, feed gases reacting in the vapor generating chamber to generate water vapor and the generated water vapor entering the reaction furnace through the delivery of a pipeline; a feed gas inlet pipeline for providing the feed gases to the vapor generating chamber; a carrier gas inlet pipeline for providing the carrier gas to the reaction furnace; and a heater coupled to the feed gas inlet pipeline for heating the feed gases to promote their reaction to generate water vapor; characterized in that, the thermal oxidation system further comprises a heating device coupled to the carrier gas inlet pipeline.

Abstract: The present invention discloses a heating method for maintaining a stable thermal budget. By following the primary procedure with a virtual procedure in such a manner that the total duration of the whole heating process remains constant, it is beneficial to maintain a stable thermal budget and further to maintain a stable device performance.

Abstract: A semiconductor fabrication method is provided, in which a protective layer is deposited on the dummy wafer such that the protective layer fully encases the dummy wafer. Therefore, the dummy wafer will not be oxidized during thermal oxidation, thereby reducing dummy wafer consumption, decreasing production cost, avoiding particulate matter produced due to oxidation of the dummy wafer, and preventing the wafer to be oxidized from contamination.

Abstract: A water transfer apparatus and a wafer transfer method are provided. The wafer transfer apparatus is provided with a heating component and a cooling component, the heating component heats the wafer carrying component to a temperature the same as the wafer when it is just unloaded from the rapid thermal anneal tool, and the cooling component cools the wafer carrying component along with the wafer to room temperature, thereby avoiding the large temperature difference between the wafer and the wafer transfer apparatus, preventing the high thermal stress induced inside the wafer during wafer transfer, avoiding wafer breakage, and ensuring the completeness of the wafer.

Abstract: The present application discloses a method for manufacturing a semiconductor device, comprising the steps of: forming a semiconductor substrate, a gate stack and a second protection layer in sequence on a first insulating layer; after defining a gate region and removing portions of the second protection layer and the gate stack outside the gate region, while keeping portions of the stop layer, the semiconductor layer and the second insulating layer which covers sidewalls of the patterned semiconductor layer outside the gate region and exposing the sacrificial layer, performing source/drain ion implementation in the semiconductor layer; after forming a second sidewall spacer so as to cover at least the exposed portion of the sacrificial layer, removing the first protection layer and the second protection layer so as to expose the semiconductor layer and the gate stack; and forming a contact layer on the exposed portion of the semiconductor layer and the gate stack; performing planarization so as to expose the

Abstract: The present application discloses a method for manufacturing a semiconductor device, comprising the steps of: forming a semiconductor substrate, a gate stack and a second protection layer in sequence on a first insulating layer; after defining a gate region and removing portions of the second protection layer and the gate stack outside the gate region, while keeping portions of the stop layer, the semiconductor layer and the second insulating layer which covers sidewalls of the patterned semiconductor layer outside the gate region and exposing the sacrificial layer, performing source/drain ion implementation in the semiconductor layer; after forming a second sidewall spacer so as to cover at least the exposed portion of the sacrificial layer, removing the first protection layer and the second protection layer so as to expose the semiconductor layer and the gate stack; and forming a contact layer on the exposed portion of the semiconductor layer and the gate stack; performing planarization so as to expose the

Abstract: The present invention provides a method and a system for cleaning furnace, including the steps of introducing a nitrogen gas flow into a cleaning agent tank to carry the cleaning agent, introducing the nitrogen gas carrying the cleaning agent into the furnace via a pipeline to clean the furnace; and generating a steam by mixing and igniting a hydrogen gas flow and an oxygen gas flow, and then introducing the steam into the furnace to clean the furnace. The method for cleaning furnace according to the invention can effectively remove metal and non-metal impurities deposits in a furnace of semiconductor oxidation furnace equipment.