Abstract: A process for producing a protein-oriented membrane which is enhanced physically and chemically by orienting protein and cross linking the oriented protein together, is described. The proteinaceous membrane which is subjected to orientation treatment alone is weak physically and chemically, and its processing and handling are therefore difficult. However, according to the present invention, the protein after the process of orientation is cross linked together to produce a protein-oriented membrane remarkably enhanced physically and chemically.

Abstract: A method of semiconductor surface measurement for measuring electrical characteristics of a surface of a semiconductor body is disclosed, by which an electrode, whose surface, which is opposite to the surface of a semiconductor substrate, is flat and the gap between the electrode and the surface is smaller than 0.5 .mu.m.

Abstract: An apparatus for measuring particles in a liquid, with the apparatus including an arrangement for allowing a sample liquid to flow out from a nozzle into a gas in a stream, an arrangement for radiating light into the sample liquid stream coaxially with the axis of the stream, and an arrangement for collecting ways of light scattered by particles contained in the sample liquid stream at a point outside and by a side of the sample liquid stream and then detecting the collective light rays.

Abstract: A monitor for particles of various materials which counts the number of the particles on real-time and in situ basis. The monitor comprises a unit for illuminating an object to be inspected with an illumination light beam of a predetermined cross-sectional area, a unit for detecting a change in optical mode of the illumination light beam caused by the particles being contained in the inspected object and illuminated with the illumination light beam, the illuminating and detecting units being of a unitary structure, and a unit for counting an amount of the particles contained in the inspected object by using a change in intensity of an optically mode changed light beam.

Abstract: The scanning photon microscope according to this invention relates the phase of the ac photovoltage or photocurrent signal to the hue of a color image and the amplitude of the signal to the brightness of the image in representing the signal distribution in the specimen in the form of a color image, in order to make a clear distinction between the amplitude and phase of the ac photovoltage or photocurrent induced in the specimen when irradiated with a photon beam, thus permitting detailed and multilateral analysis of the specimen's characteristics.

Abstract: An apparatus for and a method of measuring a boundary surface of a sample are disclosed in which a ratio of the light quantity of a part of reflected light from a sample which travels in the vicinity of the optical axis of the reflected light, to the light quantity of another part of the reflected light which is directed to a position deviating from the optical axis by a predetermined distance is used to accurately measure a boundary surface of a sample. Since the accuracy of measurement is increased by using the above ratio, light capable of passing through the sample can be used as incident light. Thus, a deep hole in the surface of the sample and a void such as an air bubble in a living being sample, which cannot be measured by the prior art, can be measured very accurately.

Abstract: A confocal scanning laser microscope according to the present invention employs an aperture which is provided at a predetermined position within a plane of a photomask including rectilinear pattern edges orthogonal to each other formed on a transparent substrate. The aperture is moved in such a way that coordinate positions at which a laser beam traverses the respective rectilinear pattern edges orthogonal to each other are found using output signals from an optical detector, and it is consequently brought into agreement with a focused position of the laser beam.

Abstract: A pattern defect inspection apparatus detects presence or absence of a defect in a pattern formed on a semiconductor wafer by scanning the pattern normally to the surface thereof by a coherent light beam of a predetermined spot size, detecting reflected diffraction lights generated thereby and processing the detected lights. It comprises an abnormal direction signal detector including photo-detectors having wide light receiving areas arranged in a plurality of spatial areas which the reflected diffraction lights from a normal pattern do not normally reach, a normal pattern detector including photo-detectors having large light receiving areas arranged in a plurality of spatial areas which the reflected diffraction lights from the normal pattern reach, and a defect discriminator for determining if the abnormal direction signals are due to a true defect or not in accordance with the signals from the abnormal direction signal detector and the normal pattern detector.

Abstract: An information recording method is provided, in which a p- or n-type semiconductor wafer is irradiated with an energetic particle beam such as an electron beam thereby to control, e.g., decreased or increased generation of the surface photovoltage at the irradiated area so that information may be recorded on the wafer.

Abstract: A carrier lifetime measuring apparatus according to the present invention has a construction wherein a first photon beam of a wavelength capable of rendering the optical absorption coefficient of a semiconductor sample very small when the semiconductor sample having a potential barrier in the vicinity of its surface is irradiated with the radiation, and a second photon beam of a wavelength capable of rendering the optical absorption coefficient very large are respectively chopped to alternately irradiate the identical place of the semiconductor sample with the chopped beams; first and second photovoltages which are generated in the semiconductor sample by these photon beams are detected by capacitance coupling; and the ratio between a first amplitude variation and a second amplitude variation is obtained from the amplitudes of the detected photovoltages; thereby to evaluate a minority carrier lifetime in the semiconductor sample.

Abstract: To nondestructively measure the carrier lifetime and cutoff frequency of a semiconductor wafer having a junction, the apparatus of this invention comprises means for radiating a pulsated photo beam whose frequency is changeable to the semiconductor wafer having a junction, means for taking out the resulting photovoltage by capacitance coupling and means for calculating the carrier lifetime and cutoff frequency from the chopping-frequency dependence characteristics of this photovoltage.

Abstract: A device for measuring semiconductor characteristics, wherein electrodes are installed maintaining a gap on the front and back sides of a semiconductor specimen of which the characteristics are to be measured, at least one of the electrodes being transparent, the surface of the semiconductor specimen is scanned with a pulsed narrow photon beam via the transparent electrode, and a photovoltage generated between the front and back surfaces of the semiconductor specimen is taken out from the two electrodes via the capacitive coupling, in order to observe the distribution of characteristics in the surface of the semiconductor specimen.

Abstract: A scanning-image forming apparatus using a photo-response signal according to this invention is constructed so that the photo-response signal obtained by scanning the surface of a semiconductor specimen with a photon beam is subjected to a 2nd differentiation, and that an image is displayed by employing the 2nd derivative of the photo-response signal as a modulation signal.