Patents by Inventor Cimoo Song

Cimoo Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6663231
    Abstract: A monolithic nozzle assembly formed with a mono-crystalline silicon substrate includes a damper for temporarily storing an incoming fluid, and a nozzle having a pyramidal portion and an outlet portion, the pyramidal portion for guiding the flow of the fluid from the damper toward the outlet portion and for increasing the pressure of the fluid, and the outlet portion through which the fluid is discharged, wherein the damper, and the pyramidal and outlet portions of the nozzle are aligned with each other and formed in the single mono-crystalline silicon substrate by continuous processes. The monolithic nozzle assembly can be formed with a single (100) mono-crystalline silicon wafer. Compared with a complicated nozzle assembly formed using a great number of silicon wafers and plates, the configuration of the monolithic nozzle assembly is simple, and can be manufactured on a mass production scale by semiconductor manufacturing processes.
    Type: Grant
    Filed: February 23, 2001
    Date of Patent: December 16, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-sung Lee, Hyun-cheol Kim, Yong-soo Oh, Cimoo Song
  • Patent number: 6621390
    Abstract: An electrostatically actuated capacitive MEMS switch includes a plurality of cantilever springs which are actuated parallel to the plane of a substrate. The springs are connected to posts vertically formed on the substrate, and an insulating layer for preventing direct contact between springs and inducing switching depending on a variation in capacitance between the springs is formed on the surface of each of the springs. An opening is formed in the substrate, and the springs are located over the opening. Each of the springs has both lateral portions located on different planes and a slanted middle portion for connecting the two lateral portions to each other.
    Type: Grant
    Filed: February 28, 2001
    Date of Patent: September 16, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Insang Song, Jae-geun Oh, Bumkyoo Choi, Chongwoo Kim, Cimoo Song
  • Patent number: 6535085
    Abstract: A resonator including a lower substrate having a groove, a dielectric filling the groove, a material film formed on the inner wall of the groove, the material film for preventing the permittivity from suddenly changing between the lower substrate and the dielectric, an upper substrate that is combined with the lower substrate to form a cavity, a conductive thin film formed on the lower surface of the upper substrate to face the dielectric and having a slot in contact with the material film and exposing the dielectric, and a strip line for a wave-guide that is formed on the upper part of the upper substrate and is connected to the conductive thin film. According to the resonator, the size of a cavity corresponding to a given resonance frequency can be reduced by filling a cavity with a dielectric (or magnetic material).
    Type: Grant
    Filed: August 10, 2001
    Date of Patent: March 18, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Insang Song, Jungwoo Kim, Seokjin Kang, Hoon Song, Cimoo Song, Youngwoo Kwon, Changyul Cheon, Yong-gyo Seo
  • Publication number: 20030030515
    Abstract: A resonator including a lower substrate having a groove, a dielectric filling the groove, a material film formed on the inner wall of the groove, the material film for preventing the permittivity from suddenly changing between the lower substrate and the dielectric, an upper substrate that is combined with the lower substrate to form a cavity, a conductive thin film formed on the lower surface of the upper substrate to face the dielectric and having a slot in contact with the material film and exposing the dielectric, and a strip line for a wave-guide that is formed on the upper part of the upper substrate and is connected to the conductive thin film. According to the resonator, the size of a cavity corresponding to a given resonance frequency can be reduced by filling a cavity with a dielectric (or magnetic material).
    Type: Application
    Filed: August 10, 2001
    Publication date: February 13, 2003
    Inventors: Insang Song, Jungwoo Kim, Seokjin Kang, Hoon Song, Cimoo Song, Youngwoo Kwon, Changyul Cheon, Yong-gyo Seo
  • Publication number: 20020153236
    Abstract: An electrostatically actuated capacitive MEMS switch includes a plurality of cantilever springs which are actuated parallel to the plane of a substrate. The springs are connected to posts vertically formed on the substrate, and an insulating layer for preventing direct contact between springs and inducing switching depending on a variation in capacitance between the springs is formed on the surface of each of the springs. An opening is formed in the substrate, and the springs are located over the opening. Each of the springs has both lateral portions located on different planes and a slanted middle portion for connecting the two lateral portions to each other.
    Type: Application
    Filed: February 28, 2001
    Publication date: October 24, 2002
    Inventors: Insang Song, Jae-Geun Oh, Bumkyoo Choi, Chongwoo Kim, Cimoo Song
  • Patent number: 6411182
    Abstract: A cavity resonator for reducing the phase noise of microwaves or millimeter waves output from a monolithic microwave integrated circuit (MMIC) voltage controlled oscillator (VCO) by using silicon (Si) or a compound semiconductor and a micro electro mechanical system (MEMS), and a method for fabricating the cavity resonator are provided. In the cavity resonator, instead of a conventional metal cavity, a cavity, obtained by finely processing silicon or a compound semiconductor, is coupled to a microstrip line to allow the cavity resonator to be adopted in a reflection type voltage controlled oscillator. A pole is provided to connect the edge of the microstrip line to a predetermined location of a cavity lower thin film. A coupling slot is formed by removing a predetermined width of a cavity upper thin film adjacent to the pole which comes in contact with the cavity upper thin film. A resistive thin film for impedance matching is formed around the cavity lower thin film which comes in contact with the pole.
    Type: Grant
    Filed: March 31, 2000
    Date of Patent: June 25, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Cimoo Song, Chungwoo Kim, Seokjin Kang, Insang Song, Yongwoo Kwon, Changyul Cheon
  • Patent number: 6362706
    Abstract: There is provided a cavity resonator for reducing the phase noise of electromagnetic waves output from a monolithic microwave integrated circuit (MMIC) voltage controlled oscillator (VCO) by utilizing a semiconductor (e.g., silicon, GaAs or InP) micro machining technique. In the cavity, instead of an existing metal cavity, a cavity, which is obtained by micro machining silicon or a compound semiconductor, is coupled to a microstrip line to allow the cavity resonator to be adopted in a reflection type voltage controlled oscillator. A coupling slot is formed by removing a predetermined size of the part of an upper ground plane film of a cavity facing to the microstrip line. Consequently, the cavity resonator reduces the phase noise of microwaves or millimeter waves which are output from a voltage controlled oscillator.
    Type: Grant
    Filed: March 31, 2000
    Date of Patent: March 26, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Cimoo Song, Chungwoo Kim, Insang Song, Yongwoo Kwon, Changyul Cheon
  • Publication number: 20010028378
    Abstract: A monolithic nozzle assembly for fluid, and a method for manufacturing the same with a single mono-crystalline silicon wafer by continuous self-alignment are provided. The monolithic nozzle assembly can be formed with a single (100) monocrystalline silicon wafer. Compared with a complicated nozzle assembly formed using a great number of silicon wafers and plates, the configuration of the monolithic nozzle assembly is simple, and can be manufactured on a mass production scale by semiconductor manufacturing processes. The monolithic nozzle assembly can be manufactured by continuous self-alignment, including anisotropic etching using the characteristic of the crystal plane of silicon, and LOCOS-based masking. Compared with a common photolithography process, the alignment error may be reduced below a few microns. The overall manufacturing process is simple and efficient with a high yield.
    Type: Application
    Filed: February 23, 2001
    Publication date: October 11, 2001
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun-sung Lee, Hyun-cheol Kim, Yong-soo Oh, Cimoo Song