Abstract: A photovoltaic conversion device including an area for collecting photons provided by luminous radiation and an area for converting the photons into electrical energy, the collecting area and the converting area being distinct, a fluid loaded with photoluminescent particles being for flowing between the collecting area and the converting area, the particles collecting photons and conveying them to the converting area in which they are reemitted.

Abstract: A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.

Abstract: The present invention relates to an intermediate suction support. The support has at least one suction surface (62) intended to receive a first face of at least one substrate comprising an embrittled layer, a film thus being defined between the first face of the substrate and the embrittled layer, the suction surface (62) of the intermediate support being the face with at least one suction element (63) comprising suction means provided so that, when the embrittled layer is submitted to a treatment leading to the separation of the film from the rest of the substrate, the film can be recuperated. Application to the production of a thin film structure.

Abstract: A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.

Abstract: The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.

Abstract: A method of creating an electrically conducting bonding between a face of a first semiconductor element and a face of a second semiconductor element using heat treatment. The method applies the faces one against the other with the placing between them of at least one layer of a material configured to provide, after heat treatment, an electrically conducting bonding between the two faces. The deposited layers are chosen so that the heat treatment does not induce any reaction product between said material and the semi-conductor elements. Then, a heat treatment is carried out.

Abstract: The present invention relates to an intermediate suction support. The support has at least one suction surface (62) intended to receive a first face of at least one substrate comprising an embrittled layer, a film thus being defined between the first face of the substrate and the embrittled layer, the suction surface (62) of the intermediate support being the face with at least one suction element (63) comprising suction means provided so that, when the embrittled layer is submitted to a treatment leading to the separation of the film from the rest of the substrate, the film can be recuperated. Application to the production of a thin film structure.

Abstract: The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.

Abstract: The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.

Abstract: The invention concerns a pressure sensor (1), able to operate at high temperature and measure the pressure of a hostile medium, comprising: a sensing element (4) integrating a membrane (8) in monocrystalline silicon carbide, made by micro-machining a substrate in polycrystalline silicon carbide, a first surface of membrane (8) intended to contact said medium, a second surface of membrane (8) comprising membrane deformation detection means (9) connected to electric contacts (10) to connect electric connection means (11), the surfaces of sensing element (4) contacting said medium being chemically inert to this medium; a carrier (5) to support sensing element (4) so that said first surface of membrane (8) may be contacted with said medium and the second surface of membrane (8) may be shielded from said medium, carrier (5) being in polycrystalline silicon carbide; a seal strip (6), in material containing silicon carbide, brazed between carrier (5) and sensing element (4) to protect the second surface of membra

Abstract: The invention concerns a pressure sensor (1), able to operate at high temperature and measure the pressure of a hostile medium, comprising:

Abstract: The invention concerns a pressure sensor (1), able to operate at high temperature and measure the pressure of a hostile medium, comprising: a sensing element (4) integrating a membrane (8) in monocrystalline silicon carbide, made by micro-machining a substrate in polycrystalline silicon carbide, a first surface of membrane (8) intended to contact said medium, a second surface of membrane (8) comprising membrane deformation detection means (9) connected to electric contacts (10) to connect electric connection means (11), the surfaces of sensing element (4) contacting said medium being chemically inert to this medium; a carrier (5) to support sensing element (4) so that said first surface of membrane (8) may be contacted with said medium and the second surface of membrane (8) may be shielded from said medium, carrier (5) being in polycrystalline silicon carbide; a seal strip (6), in material containing silicon carbide, brazed between carrier (5) and sensing element (4) to protect the second surface of membra

Abstract: A substrate holder is provided with two kinds of grooves (clearances) in the absorbing surface thereof. One kind of groove is made of a suitable depth so as to be able to quickly exhaust air and reduce pressure to thereby vacuum mount a substrate, and the other kind of groove is formed with a very small depth within such a range that there is no influence of dust being interposed between the holder and the substrate, in order to better the heat conduction between the substrate and the substrate holder. In addition, the area of the latter is made large as compared with the area of the former.

Abstract: A micromachined structure able to operate at a high temperature, including a deformable membrane secured on a support allowing for its deformation. The membrane includes at least a membrane layer in a material retaining its elasticity for the high operating temperature. The membrane layer supporting components detect the deformation of the membrane, made in a semiconducting material, and it has an electrically insulating interface with the detection components, formed by an electrically insulating layer. The support is made in a material enabling the membrane to be released by a microelectronics technique.

Abstract: The invention relates to a method for producing a thin membrane, comprising the following steps: implanting gas species, through one surface of a first substrate (10) and through one surface of a second substrate (20), which in said substrates are able to create microcavities (11, 21) delimiting, for each substrate, a thin layer (13, 23) lying between these microcavities and the implanted surface, the microcavities being able, after their implantation, to cause detachment of the thin layer from its substrate; assembly of the first substrate (10) onto the second substrate (20) such that their implanted surfaces face one another; detaching each thin layer (13, 23) from its substrate (10, 20), the thin layers remaining assembled together to form said thin membrane. The invention also concerns a thin membrane structure obtained with this method.

Abstract: The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.

Abstract: The invention relates to an apparatus for forming SiC on a nucleus. The apparatus comprises a first enclosure (100) defined by at least one wall (102, 110, 112) and able to receive a SiC nucleus (122), a SiC powder reservoir (118) and means (120) for heating the enclosure and, according to the invention, the wall (102, 110, 112) is essentially covered by at least one SiC layer (116).

Abstract: The laser comprises an amplifying medium placed between a first reflector and a second dispersive reflector, and a rotating wheel adapted to carry a plurality of optical deflector elements interposed between the amplifying medium and the second dispersive reflector. A light beam having a certain incidence only in respect of a predetermined wavelength which is dependent on the incidence is reflected backwards from the second dispersive reflector. The optical reflector elements are placed periodically in the path of the light beam so as to produce a sequential modification in the incidence of the light beam emerging from the amplifying medium and to give the incidence a number of different values corresponding to the desired number of wavelengths.