Abstract: A method anneals one or more diamonds. The method provides a furnace having a chamber with a heating element configured to radiatively heat a diamond. The diamond is positioned within the chamber, and levels of gas within the chamber are modulated to achieve a prescribed pressure. The diamond is heated to a prescribed temperature using a given heating ramp rate. The given heating ramp rate is greater than about 60° C. per minute and less than about 800° C. per minute. The prescribed temperature is greater than about 1,350° C. and less than about 2,200° C. The prescribed pressure is greater than 1×10{circumflex over (?)}?9 Torr and less than about 550 Torr.

Abstract: The invention relates to a method of fabricating at least one polycrystalline silicon plate (68, 70) with one (64, 66) of its two faces presenting predetermined relief, in which method a layer of polycrystalline silicon (60, 62) is deposited on at least one (56, 58) of the two faces of a support (50). The method comprises the steps of embossing said face (52, 54) of the support (50) to impart thereto a shape that is complementary to said relief; depositing said polycrystalline silicon layer (60, 62) on said embossed face (56, 58) of the support (50), the surface (64 or 66) of said polycrystalline silicon layer situated in contact with said embossed face (56 or 58) then taking on the shape of said relief; and eliminating said support in order to obtain said polycrystalline silicon plate (68 or 70). The invention is applicable to fabricating solar cells.

Abstract: The invention relates to a method of fabricating photovoltaic cells in which at least one layer of semiconductor material is deposited continuously on a carbon ribbon (10) to form a composite ribbon (20), said layer having a free face (22, 24) opposite from its face in contact with the carbon ribbon. According to the invention, at least one treatment (28) is applied to the layer of semiconductor material, from said free face (22, 24), in order to implement photovoltaic functions of the cells on said layer, prior to eliminating the carbon ribbon (10). The invention makes it possible to increase productivity in the fabrication of photovoltaic cells, which cells can be of very small thicknesses.

Abstract: The present invention relates to a device (100) for depositing a layer based on polycrystalline silicon onto a substantially plane, elongate, moving support (4) having two longitudinal faces (43, 44) and two longitudinal side edges (41, 42), the device comprising: a crucible (1) containing a bath (2) of molten silicon, said support (4) being designed to be dipped at least in part in the bath and to pass substantially vertically in its long direction through the equilibrium surface (21) of the bath; and at least one edge control element (5, 5?), each edge control element being maintained substantially vertically close to one of the two longitudinal side edges (41, 42); each edge control element comprising walls (51 to 53?) defining a longitudinal slot (54, 54?) beside the corresponding longitudinal side edge, each slot being dipped in part in the bath (2) so as to raise the level of the bath by capillarity in the vicinity of the corresponding longitudinal side edge, the device being characterized in that at

Abstract: A method of pulling at least one ribbon of a semiconductor material, in which method two parallel filaments that are spaced apart from each other pass vertically upwards through the surface of a melt of said semiconductor material in a continuous manner, said ribbon being formed from a meniscus located between said filaments and substantially at said surface. According to the invention, a support strip is interposed between said filaments and is contained in the plane defined by said filaments, said support strip passing vertically upwards through said surface of said melt of molten semiconductor material in a continuous manner at the same rate as said filaments, said ribbon of semiconductor material being formed on one of the two faces of said support strip and being supported by said face. The invention can be used for making polycrystalline silicon ribbons for fabricating photo-cells.

Abstract: The present invention relates to a device (100) for depositing a layer based on polycrystalline silicon onto a substantially plane, elongate, moving support (4) having two longitudinal faces (43, 44) and two longitudinal side edges (41, 42), the device comprising: a crucible (1) containing a bath (2) of molten silicon, said support (4) being designed to be dipped at least in part in the bath and to pass substantially vertically in its long direction through the equilibrium surface (21) of the bath; and at least one edge control element (5, 5?), each edge control element being maintained substantially vertically close to one of the two longitudinal side edges (41, 42); each edge control element comprising walls (51 to 53?) defining a longitudinal slot (54, 54?) beside the corresponding longitudinal side edge, each slot being dipped in part in the bath (2) so as to raise the level of the bath by capillarity in the vicinity of the corresponding longitudinal side edge, the device being characterized in that a

Abstract: A holder to which a machining insert for example of triangular configuration is secured; this insert comprises a pivot pin, is clamped by means of a jaw and positioned angularly by a slider having a forked end portion urged against one side of the insert by spring means. The clamping screw constitutes a stop member to the slider.