Patents by Inventor Claudio L. Rampoldi

Claudio L. Rampoldi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7173417
    Abstract: A metrology instrument includes an eddy current sensor that is mounted to and concentric with a confocal distance sensor. By measuring the precise vertical placement of the eddy current probe with respect to the surface of the sample using the confocal distance sensor, the accuracy and precision of the eddy current measurement is improved. Because the confocal distance sensor and the eddy current sensor are confocal, there is no need to move the relative lateral positions between the sample and instrument, between the distance measurement and the eddy current measurement, thereby reducing error in the measurement as well are maximizing the throughput by minimizing the required stage travel for a single measurement.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: February 6, 2007
    Assignee: Nanometrics Incorporated
    Inventors: Jaime Poris, Claudio L. Rampoldi, Pablo I. Rovira, Christopher W. Blaufus
  • Patent number: 6925860
    Abstract: The height profile of a sample that includes at least one film on a substrate is leveled based on the measured thickness of the overlying film. An apparatus that levels the height profile includes a metrology tool that generates the height profile of a sample and a metrology tool that measures the thickness of one or more layers of a film stack on top of a substrate at two or more locations. The measured thickness is then used to level the height profile to reduce any tilt error before a step height calculation is made. For example, the slope of the thickness between two or more measurement points may be used to adjust the height profile. Once the height profile is leveled, step heights may be calculated with reduced tilting error.
    Type: Grant
    Filed: February 21, 2003
    Date of Patent: August 9, 2005
    Assignee: Nanometrics Incorporated
    Inventors: Jaime Poris, Claudio L. Rampoldi
  • Patent number: 6813031
    Abstract: A profiling method compensates for phase changes associated with the presence of multiple or varying material in the area to be measured. The profiling method measures at least a portion of the height profile of the area of interest. The phase of the different materials in the region are also obtained and used to generate a correction factor. Depending on the type of material in the region of interest, the correction factor may be the material specific phase difference of the materials in the region, e g., when at least one of the materials is opaque to the wavelength of light used to measure the height profile, or the relationship between the thickness and phase of the material for a desired thickness range, e.g., when one or more of the materials is transparent to the wavelengths used to measure the height profile. The correction factor is then used to correct and/or convert the measured phase profile to an actual height profile.
    Type: Grant
    Filed: August 4, 2003
    Date of Patent: November 2, 2004
    Assignee: Nanometrics Incorporated
    Inventors: Jaime Poris, Claudio L. Rampoldi
  • Patent number: 6633389
    Abstract: A profiling method compensates for phase changes associated with the presence of multiple or varying material in the area to be measured. The profiling method measures at least a portion of the height profile of the area of interest. The phase of the different materials in the region are also obtained and used to generate a correction factor. Depending on the type of material in the region of interest, the correction factor may be the material specific phase difference of the materials in the region, e.g., when at least one of the materials is opaque to the wavelength of light used to measure the height profile, or the relationship between the thickness and phase of the material for a desired thickness range, e.g., when one or more of the materials is transparent to the wavelengths used to measure the height profile. The correction factor is then used to correct and/or convert the measured phase profile to an actual height profile.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: October 14, 2003
    Assignee: Nanometrics Incorporated
    Inventors: Jaime Poris, Claudio L. Rampoldi