Abstract: A method of forming a radiation detector includes forming a stack including a plurality of arrays of radiation detection devices. Forming an array of the plurality of arrays includes forming a polysilicon layer over an interlayer dielectric layer of another array of the plurality of arrays; forming charge storage layers over the polysilicon layer; forming a second polysilicon layer over the charge storage layers; etching the second polysilicon layer to form gate stacks; and depositing an interlayer dielectric disposed on at least three sides of the gate stacks, the interlayer dielectric including a radiation reactive material.

Abstract: A semiconductor component includes a substrate including a plurality of source/drain implants in the form of rows and a charge storage structure disposed over the substrate. The charge storage structure includes at least three continuous layers including a first silicon oxide layer, a silicon nitride layer disposed on the first silicon oxide layer, and a second silicon oxide layer disposed on the silicon nitride layer. The semiconductor component further includes a plurality of gate structures in the form of columns disposed over the charge structure and extending perpendicular to the rows and further includes a radiation protection layer disposed over the charge storage structure and the plurality of gate structures. The radiation protection layer includes a radiation resistant material including boron having an isotope composition of at least 90% boron-11.

Abstract: A system for capturing and sequestering carbon dioxide includes nanoparticles formed from alkali or alkali metal oxides or hydroxides, such as lithium oxide. Carbon-dioxide containing effluent gasses are exposed to the nanoparticles in fixed beds or fluidized beds, or in a co-flow configuration. The nanoparticle metal oxides are converted to metal carbonates. The nanoparticles can be recovered and the carbon dioxide release by exposing the nanoparticles to an oxygen containing atmosphere at high temperatures.

Abstract: A method of forming a radiation detector includes forming a stack including a plurality of arrays of radiation detection devices. Forming an array of the plurality of arrays includes forming a polysilicon layer over an interlayer dielectric layer of another array of the plurality of arrays; forming charge storage layers over the polysilicon layer; forming a second polysilicon layer over the charge storage layers; etching the second polysilicon layer to form gate stacks; and depositing an interlayer dielectric disposed on at least three sides of the gate stacks, the interlayer dielectric including a radiation reactive material.

Abstract: A method of preparing a surface includes applying rough material layer to a surface of a support material. The rough material layer has a thickness in a range of 50 nm to 5 micrometers and a roughness Ra in a range of 10 nm to 1 micrometer. The method includes depositing a ceramic nitride or oxynitride over the rough material layer. In an example, a vehicle includes a structural support and a component comprising a support material defining an exterior facing surface and a ceramic nitride or oxynitride layer disposed over the support material.

Abstract: A turbine includes a central hub to rotate around an axis and a plurality of blades connected to the central hub. Each blade of the set of blades includes a support material having an exterior facing surface and a ceramic nitride coating disposed over the exterior facing surface. The ceramic nitride coating includes a semi-metal nitride, such as silicon nitride. The ceramic nitride coating can have a thickness in a range of 50 nm to 5 micrometers. A rough material layer can be disposed between the support material and the ceramic nitride coating.

Abstract: A method of preparing a surface includes applying rough material layer to a surface of a support material. The rough material layer has a thickness in a range of 50 nm to 5 micrometers and a roughness Ra in a range of 10 nm to 1 micrometer. The method includes depositing a ceramic nitride or oxynitride over the rough material layer. In an example, a vehicle includes a structural support and a component comprising a support material defining an exterior facing surface and a ceramic nitride or oxynitride layer disposed over the support material.

Abstract: An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.

Abstract: Systems and methods are described herein for detecting particles emitted by nuclear material. The systems comprise one or more semiconductor devices for detecting particles emitted from nuclear material. The semiconductor devices can comprise a charge storage element comprising several layers. A non-conductive charge storage layer enveloped on top and bottom by dielectric layers is mounted on a substrate. At least one top semiconductor layer can be placed on top of the top dielectric layer. A reactive material that reacts to particles, such as neutrons emitted from nuclear material, can be incorporated into the top semiconductor layer. When the reactive material reacts to a particle emitted from nuclear material, ions are generated that can alter the charge storage layer and enable detection of the particle.

Abstract: An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.

Abstract: An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.

Abstract: A method of operating an electronic device including determining an initial charge level at a non-volatile charge storage structure of a radiation-sensitive device including a radiation-reactive material and determining if a first radiation event has occurred based upon the non-volatile charge storage device having a different charge level than the initial charge level. The method further includes identifying the first radiation event as associated with either a first type of radiation or a second type of radiation based upon the different charge level.

Abstract: A mobile device including a housing, a wireless signal transceiver contained within the housing, and a radiation-detecting structure comprising a charge storage structure contained within the housing to detect radiation.

Abstract: A method of operating an electronic device including determining an initial charge level at a non-volatile charge storage structure of a radiation-sensitive device including a radiation-reactive material and determining if a first radiation event has occurred based upon the non-volatile charge storage device having a different charge level than the initial charge level. The method further includes identifying the first radiation event as associated with either a first type of radiation or a second type of radiation based upon the different charge level.

Abstract: An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.