Abstract: An apparatus for thermal treatment of coatings on substrates includes a microwave applicator cavity; a microwave power supply to deliver power to the cavity; a thermally insulated microwave-transparent compartment within the cavity, large enough to contain the coated substrate while occupying no more than 50% of the total volume of the cavity; a means of supporting the coated substrate within the compartment; an adjustable IR heating source in the compartment and facing the substrate so that a selected amount of IR heating may be applied to the substrate; and, a non-contacting temperature measurement device to measure the temperature of the coating. Related methods for using the apparatus to process different kinds of films are also disclosed.

Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

Abstract: A microwave power supply includes a magnetron, a waveguide configured to carry microwave power from the magnetron to a selected load, and an adjustable impedance element connected to the waveguide at a location upstream from the magnetron. The power supply may further include provision for varying the filament voltage to the magnetron tube. In the associated method, the adjustable upstream impedance and the adjustable filament voltage may be combined (and may be adjusted iteratively) to achieve high Q output. The load may be an applicator cavity for processing selected materials. The invention is particularly suitable for high Q cavities, such as single mode cavities, where it is desirable to match the output of the microwave source to the characteristics of the cavity for efficient operation.

Abstract: An apparatus for heating a semiconductor wafer includes the following: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the applicator cavity. The fixture comprises a dielectric member providing mechanical support for the wafer and a metallic ring disposed generally parallel to and concentric with the wafer at a selected distance from the wafer, whereby the application of microwave power to the wafer may be adjusted to compensate for edge effects. An associated method for heating a semiconductor wafer comprises the steps of: a. placing the wafer in a microwave applicator cavity; b. supporting the wafer on a fixture, the fixture comprising a dielectric supporting member in contact with the wafer and a metallic ring member disposed generally parallel to and concentric with the wafer at a selected distance from the wafer; and, c.