Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from a p-doping to an n-doping on a surface of a substrate or a preceding layer from the vapor phase from an epitaxial gas flow, at least one first precursor for an element of main group III, and at least one second precursor for an element of main group V. When a first growth height is reached, a first initial doping level is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, and subsequently, by stepwise or continuously changing the ratio of the first mass flow to the second mass flow and by stepwise or continuously increasing a mass flow of a third precursor for an n-type dopant in the epitaxial gas flow.

Abstract: In a large package of insulation material products, in particular mineral wool products in the form of panels or rolls or the like, which consist of at least two stacks of rock wool products and wherein each stack is wrapped with a sheeting, which surrounds the stack in the form of an envelope, two adjacently lying principal surfaces of the stack are joined to one another by means of a superposed sheeting, in which eye-like handle loops are formed, at least one handle loop being arranged on each stack.