Abstract: An optocoupler having a transmitter unit and a receiver unit being electrically isolated from each other and optically coupled with each other and integrated into a shared housing. The receiver unit includes an energy source that has a first electrical contact and a second electrical contact. The transmitter unit includes at least one first transmitter diode having a first optical wavelength and a second transmitter diode having a second optical wavelength. The first optical wavelength differing from the second optical wavelength by a difference wavelength, and the energy source of the receiving unit including two partial sources. The energy source being designed as a current source or as a voltage source, and the first partial source including a first semiconductor diode, and the second partial source including a second semiconductor diode. Each partial source having multiple semiconductor layers for each partial source being arranged in the shape of a stack.

Abstract: A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.

Abstract: A stacked, high-blocking III-V semiconductor power diode having a first metallic terminal contact layer, formed at least in regions, and a highly doped semiconductor contact region of a first conductivity type and a first lattice constant. A drift layer of a second conductivity type and having a first lattice constant is furthermore provided. A semiconductor contact layer of a second conductivity, which includes an upper side and an underside, and a second metallic terminal contact layer are formed, and the second metallic terminal contact layer being integrally connected to the underside of the semiconductor contact layer, and the semiconductor contact layer having a second lattice constant at least on the underside, and the second lattice constant being the lattice constant of InP, and the drift layer and the highly doped semiconductor contact region each comprising an InGaAs compound or being made up of InGaAs.

Abstract: A receiver component having a number of partial voltage sources implemented as semiconductor diodes connected to one another in series, so that the number of partial voltage sources generate a source voltage, and each of the partial voltage sources has a semiconductor diode with a p-n junction, and the semiconductor diode has a p-doped absorption layer. The p absorption layer is passivated by a p-doped passivation layer with a larger band gap than the band gap of the p absorption layer, and the semiconductor diode has an n absorption layer that is passivated by an n-doped passivation layer with a larger band gap than the band gap of the n absorption layer. The partial source voltages of the individual partial voltage sources have a deviation of less than 20% from one another, and a tunnel diode is formed between each sequential pair of partial voltage sources.

Abstract: An optocoupler having a transmitter unit and a receiver unit being electrically isolated from each other and optically coupled with each other and integrated into a shared housing. The receiver unit includes an energy source that has a first electrical contact and a second electrical contact. The transmitter unit includes at least one first transmitter diode having a first optical wavelength and a second transmitter diode having a second optical wavelength. The first optical wavelength differing from the second optical wavelength by a difference wavelength, and the energy source of the receiving unit including two partial sources. The energy source being designed as a current source or as a voltage source, and the first partial source including a first semiconductor diode, and the second partial source including a second semiconductor diode. Each partial source having multiple semiconductor layers for each partial source being arranged in the shape of a stack.

Abstract: A receiver component having a number of partial voltage sources implemented as semiconductor diodes connected to one another in series, so that the number of partial voltage sources generate a source voltage, and each of the partial voltage sources has a semiconductor diode with a p-n junction, and the semiconductor diode has a p-doped absorption layer. The p absorption layer is passivated by a p-doped passivation layer with a larger band gap than the band gap of the p absorption layer, and the semiconductor diode has an n absorption layer that is passivated by an n-doped passivation layer with a larger band gap than the band gap of the n absorption layer. The partial source voltages of the individual partial voltage sources have a deviation of less than 20% from one another, and a tunnel diode is formed between each sequential pair of partial voltage sources.

Abstract: A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped electrical isolator. The isolator is formed between the transmitter component and the receiver component, and the transmitter component and the receiver component and the isolator are arranged one on top of another in the form of a stack. The transmitter component and the receiver component are galvanically separated from one another but optically coupled to one another. The isolator is transparent for the emission wavelengths of the transmitter component and the centroidal axis of the transmitting area and the centroidal axis of the receiving area are substantially or precisely parallel to one another.

Abstract: A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped electrical isolator. The isolator is formed between the transmitter component and the receiver component, and the transmitter component and the receiver component and the isolator are arranged one on top of another in the form of a stack. The transmitter component and the receiver component are galvanically separated from one another but optically coupled to one another. The isolator is transparent for the emission wavelengths of the transmitter component and the centroidal axis of the transmitting area and the centroidal axis of the receiving area are substantially or precisely parallel to one another.