Patents by Inventor Clifford Boyd

Clifford Boyd has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer deposition of high dielectric constant gate dielectrics
    Publication number: 20060060930
    Abstract: Gate dielectrics formed of silicates of hafnium or zirconium dioxide may be formed by atomic layer deposition. The precursors for the atomic layer deposition may include an oxidant, a silicate precursor, and a zirconium or hafnium precursor.
    Type: Application
    Filed: September 17, 2004
    Publication date: March 23, 2006
    Inventors: Matthew Metz, Clifford Boyd, Markus Kuhn, Suman Datta, Jack Kavalieros, Mark Doczy, Justin Brask, Robert Chau