Patents by Inventor Clifford M. Morris

Clifford M. Morris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220154025
    Abstract: Polymer binders, e.g., crosslinked polymer binders, have been found to be an effective film component in creating high quality transparent electrically conductive coatings or films comprising metal nanostructured networks. The metal nanowire films can be effectively patterned and the patterning can be performed with a high degree of optical similarity between the distinct patterned regions. Metal nanostructured networks are formed through the fusing of the metal nanowires to form conductive networks. Methods for patterning include, for example, using crosslinking radiation to pattern crosslinking of the polymer binder. The application of a fusing solution to the patterned film can result in low resistance areas and electrically resistive areas. After fusing, the network can provide desirable low sheet resistances while maintaining good optical transparency and low haze. A polymer overcoat can further stabilize conductive films and provide desirable optical effects.
    Type: Application
    Filed: February 1, 2022
    Publication date: May 19, 2022
    Inventors: Xiqiang Yang, Ying-Syi Li, Yungyu Huang, Christopher S. Scully, Clifford M. Morris, Ajay Virkar
  • Patent number: 11274223
    Abstract: Polymer binders, e.g., crosslinked polymer binders, have been found to be an effective film component in creating high quality transparent electrically conductive coatings or films comprising metal nanostructured networks. The metal nanowire films can be effectively patterned and the patterning can be performed with a high degree of optical similarity between the distinct patterned regions. Metal nanostructured networks are formed through the fusing of the metal nanowires to form conductive networks. Methods for patterning include, for example, using crosslinking radiation to pattern crosslinking of the polymer binder. The application of a fusing solution to the patterned film can result in low resistance areas and electrically resistive areas. After fusing, the network can provide desirable low sheet resistances while maintaining good optical transparency and low haze. A polymer overcoat can further stabilize conductive films and provide desirable optical effects.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: March 15, 2022
    Assignee: C3 Nano, Inc.
    Inventors: Xiqiang Yang, Ying-Syi Li, Yungyu Huang, Chris Scully, Clifford M. Morris, Ajay Virkar
  • Publication number: 20150144380
    Abstract: Polymer binders, e.g., crosslinked polymer binders, have been found to be an effective film component in creating high quality transparent electrically conductive coatings or films comprising metal nanostructured networks. The metal nanowire films can be effectively patterned and the patterning can be performed with a high degree of optical similarity between the distinct patterned regions. Metal nanostructured networks are formed through the fusing of the metal nanowires to form conductive networks. Methods for patterning include, for example, using crosslinking radiation to pattern crosslinking of the polymer binder. The application of a fusing solution to the patterned film can result in low resistance areas and electrically resistive areas. After fusing the network can provide desirable low sheet resistances while maintaining good optical transparency and low haze. A polymer overcoat can further stabilize conductive films and provide desirable optical effects.
    Type: Application
    Filed: November 22, 2013
    Publication date: May 28, 2015
    Inventors: Xiqiang Yang, Ying-Syi Li, Yungyu Huang, Chris Scully, Clifford M. Morris, Ajay Virkar
  • Publication number: 20110120537
    Abstract: High quality silicon inks are used to form polycrystalline layers within thin film solar cells having a p-n junction. The particles deposited with the inks can be sintered to form the silicon film, which can be intrinsic films or doped films. The silicon inks can have a z-average secondary particle size of no more than about 250 nm as determined by dynamic light scattering on an ink sample diluted to 0.4 weight percent if initially having a greater concentration. In some embodiments, an intrinsic layer can be a composite of an amorphous silicon portion and a crystalline silicon portion.
    Type: Application
    Filed: September 21, 2010
    Publication date: May 26, 2011
    Inventors: Goujun Liu, Clifford M. Morris, Igor Altman, Uma Srinivasan, Shivkumar Chiruvolu