Patents by Inventor Clinton D. Van Siclen

Clinton D. Van Siclen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9689814
    Abstract: A chemical detection system includes a frame, an emitter coupled to the frame, and a detector coupled to the frame proximate the emitter. The system also includes a shielding system coupled to the frame and positioned at least partially between the emitter and the detector, wherein the frame positions a sensing surface of the detector in a direction substantially parallel to a plane extending along a front portion of the frame. A method of analyzing composition of a suspect object includes directing neutrons at the object, detecting gamma rays emitted from the object, and communicating spectrometer information regarding the gamma rays. The method also includes presenting a GUI to a user with a dynamic status of an ongoing neutron spectroscopy process. The dynamic status includes a present confidence for a plurality of compounds being present in the suspect object responsive to changes in the spectrometer information during the ongoing process.
    Type: Grant
    Filed: March 19, 2013
    Date of Patent: June 27, 2017
    Assignee: Battelle Energy Alliance, LLC
    Inventors: Augustine J. Caffrey, David L. Chichester, Ann E. Egger, Kenneth M. Krebs, Edward H. Seabury, Clinton D. Van Siclen, C. Jayson Wharton, John M. Zabriskie
  • Patent number: 5490187
    Abstract: A method for enhancing the diffusion of gas bubbles or voids attached to impurity precipitates, and biasing their direction of migration out of the host metal (or metal alloy) by applying a temperature gradient across the host metal (or metal alloy). In the preferred embodiment of the present invention, the impurity metal is insoluble in the host metal and has a melting point lower than the melting point of the host material. Also, preferably the impurity metal is lead or indium and the host metal is aluminum or a metal alloy.
    Type: Grant
    Filed: June 13, 1994
    Date of Patent: February 6, 1996
    Assignee: Lockheed Idaho Technologies Company
    Inventors: Clinton D. Van Siclen, Richard N. Wright