Abstract: Embodiments disclosed herein relate to measuring thermal properties. At least one embodiment includes a method including heating a location of an object with an excitation laser beam, the excitation laser beam being a continuous-wave laser beam modulated by a square-wave modulation waveform. The method may also include measuring temperature at the location over time by measuring changes in one or more reflective properties at the location. Related apparatuses are also disclosed.

Abstract: Embodiments are disclosed for a method. The method includes generating a correction datastore indicating shifts in magnitude representing corresponding characters that uniquely identify hardware comprising a computer processing chip. The method further includes generating security masks based on a correction file. Additionally, the method includes using a correction process for the computer processing chip. The generated security masks include corresponding overlays representing the shifts in magnitude with respect to corresponding product masks for the computer processing chip. The method also includes generating the computer processing chip using the security masks and the product masks.

Abstract: Described is a semiconductor processing system including a measurement tool configured to measure warpage characteristics in a semiconductor wafer. The semiconductor processing system further includes a pixelated surface configured to retain the semiconductor wafer, where the pixelated surface approximates the warpage characteristics to conform to the semiconductor wafer. The semiconductor processing system further includes a semiconductor processing tool configured to perform processing on the semiconductor wafer while it is retained on the pixelated surface.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of metal lines on substrate, forming a sacrificial dielectric material layer between the metal lines, forming a hardmask over at least one of the metal lines, etching at least one of the metal lines that is not covered by the hardmask, treating the sacrificial dielectric material layer to soften the layer. The method also includes removing the treated sacrificial dielectric material layer.

Abstract: Embodiments are disclosed for a method. The method includes generating a correction datastore indicating shifts in magnitude representing corresponding characters that uniquely identify hardware comprising a computer processing chip. The method further includes generating security masks based on a correction file. Additionally, the method includes using a correction process for the computer processing chip. The generated security masks include corresponding overlays representing the shifts in magnitude with respect to corresponding product masks for the computer processing chip. The method also includes generating the computer processing chip using the security masks and the product masks.

Abstract: Techniques for using open frame (E0) exposures for lithographic tool track/cluster monitoring are provided. In one aspect, a method for monitoring a lithographic process includes: performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool; baking and developing the at least one wafer; performing a defect inspection of the at least one wafer to generate a haze map; grouping haze data from the haze map; and analyzing the haze data to identify a maximum E0 response dose E?.

Abstract: In an approach, a processor receives device identification information corresponding to at least one device local to a location of a transaction. A processor receives notification of an infected user. A processor determines that the infected user is associated with the transaction. A processor identifies a second user from the device identification information. A processor sends a notification to the second user.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of metal lines on substrate, forming a sacrificial dielectric material layer between the metal lines, forming a hardmask over at least one of the metal lines, etching at least one of the metal lines that is not covered by the hardmask, treating the sacrificial dielectric material layer to soften the layer. The method also includes removing the treated sacrificial dielectric material layer.

Abstract: Techniques for using open frame (E0) exposures for lithographic tool track/cluster monitoring are provided. In one aspect, a method for monitoring a lithographic process includes: performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool; baking and developing the at least one wafer; performing a defect inspection of the at least one wafer to generate a haze map; grouping haze data from the haze map; and analyzing the haze data to identify a maximum E0 response dose E?.