Abstract: A semiconductor device and a method of making the same. The device includes a substrate mounted on a carrier, the substrate comprising a High Electron Mobility Transistor (HEMT) having a source, a gate and a drain. The carrier comprises an electrically conductive shielding portion for providing shielding against electromagnetic interference associated with switching of the device during operation. The electrically conductive shielding portion is electrically isolated from the source and from the backside of the substrate.

Abstract: In an embodiment a sensor arrangement includes a sensor die having a contact area, a suspended area and a sensitive element located in the suspended area, an interposer including at least two vias connecting a first side of the interposer to a second side of the interposer and a support mechanically and electrically connecting the contact area of the sensor die to the first side of the interposer, the support including at least two contact joints.

Abstract: In an embodiment a method for forming a pressure sensor device includes providing a pressure sensor on a substrate body, the pressure sensor comprising a membrane, depositing a top layer on top of the substrate body and the pressure sensor, connecting a cap body with the top layer, a mass of the cap body being approximately equal to a mass of the substrate body and introducing at least one opening in the cap body.

Abstract: In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.

Abstract: In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body.

Abstract: A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

Abstract: The sensor package comprises a carrier (1) including electric conductors (13), an ASIC device (6) and a sensor element (7), which is integrated in the ASIC device (6). A dummy die or interposer (4) is arranged between the carrier (1) and the ASIC device (6). The dummy die or interposer (4) is fastened to the carrier (1), and the ASIC device (6) is fastened to the dummy die or interposer (4).

Abstract: The sensor package comprises a carrier (1) including electric conductors (13), an ASIC device (6) and a sensor element (7), which is integrated in the ASIC device (6). A dummy die or interposer (4) is arranged between the carrier (1) and the ASIC device (6). The dummy die or interposer (4) is fastened to the carrier (1), and the ASIC device (6) is fastened to the dummy die or interposer (4).

Abstract: A pressure sensor device comprises a substrate body, a pressure sensor comprising a membrane, and a cap body comprising at least one opening. The pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to the main plane of extension of the substrate body, and the mass of the substrate body equals approximately the mass of the cap body. Furthermore, a method for forming a pressure sensor device is provided.

Abstract: A semiconductor device comprises a substrate body, an environmental sensor, a cap body and a volume of gas. The environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to the main plane of extension of the substrate body, and at least one channel between the substrate body and the cap body connects the volume of gas with the environment of the semiconductor device such that the channel is permeable for gases.

Abstract: Disclosed is an integrated sensor chip package comprising an integrated sensor chip enveloped in a packaging layer (30), the integrated circuit comprising a substrate (10) having a major surface; and a light sensor comprising a plurality of photodetectors (12a-d) on a region of said major surface; the packaging layer comprising an opening (32) exposing said region, the integrated sensor chip package further comprising a light blocking member (20) over said opening, the light blocking member defining an aperture (22) exposing a first set of photodetectors to light from a first range of directions and exposing a second set of photodetectors to light from a second range of directions, wherein the first range is different to the second range. An apparatus including such an integrated sensor chip package and a method of manufacturing such an integrated sensor chip package are also disclosed.

Abstract: A semiconductor device and a method of making the same. The device includes a substrate mounted on a carrier, the substrate comprising a High Electron Mobility Transistor (HEMT) having a source, a gate and a drain. The carrier comprises an electrically conductive shielding portion for providing shielding against electromagnetic interference associated with switching of the device during operation. The electrically conductive shielding portion is electrically isolated from the source and from the backside of the substrate.

Abstract: A semiconductor device and a method of making the same. The semiconductor device includes a semiconductor substrate mounted on a carrier. The semiconductor substrate includes a Schottky diode. The Schottky diode has an anode and a cathode. The semiconductor device also includes one or more bond wires connecting the cathode to a first electrically conductive portion of the carrier. The semiconductor device further includes one or more bond wires connecting the anode to a second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device.

Abstract: One example embodiment discloses a chip having a chip area, wherein the chip area includes: an overhang area; a rigid coupling area, having a set of rigid coupling points, located on one side of the overhang area; and a flexible coupling area, having a set of flexible coupling points, located on a side of the overhang area opposite to the a rigid coupling area. Another example embodiment discloses a method for fabricating a die interconnect, comprising: fabricating a rigid coupler area, having a set of rigid coupler points, within a chip having a chip area; defining an overhang area within the chip area and abutted to the rigid coupler area; and fabricating a flexible coupler area, having a set of flexible coupler points, within the chip area abutted to a side of the overhang area opposite to the rigid coupler area.

Abstract: A semiconductor device and a method of making the same. The semiconductor device includes a semiconductor substrate mounted on a carrier. The semiconductor substrate includes a Schottky diode. The Schottky diode has an anode and a cathode. The semiconductor device also includes one or more bond wires connecting the cathode to a first electrically conductive portion of the carrier. The semiconductor device further includes one or more bond wires connecting the anode to a second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device.

Abstract: An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.

Abstract: One example embodiment discloses a chip having a chip area, wherein the chip area includes: an overhang area; a rigid coupling area, having a set of rigid coupling points, located on one side of the overhang area; and a flexible coupling area, having a set of flexible coupling points, located on a side of the overhang area opposite to the a rigid coupling area. Another example embodiment discloses a method for fabricating a die interconnect, comprising: fabricating a rigid coupler area, having a set of rigid coupler points, within a chip having a chip area; defining an overhang area within the chip area and abutted to the rigid coupler area; and fabricating a flexible coupler area, having a set of flexible coupler points, within the chip area abutted to a side of the overhang area opposite to the rigid coupler area.

Abstract: An integrated circuit package for an integrated circuit having one or more sensor elements in a sensor element area of the circuit. An encapsulation covers bond wires but leaves an opening over the sensor element area. A protection layer is provided over the integrated circuit over which the encapsulation extends, and it has a channel around the sensor element area to act as a trap for any encapsulation material which has crept into the opening area.

Abstract: Disclosed is an integrated sensor chip package comprising an integrated sensor chip enveloped in a packaging layer (30), the integrated circuit comprising a substrate (10) having a major surface; and a light sensor comprising a plurality of photodetectors (12a-d) on a region of said major surface; the packaging layer comprising an opening (32) exposing said region, the integrated sensor chip package further comprising a light blocking member (20) over said opening, the light blocking member defining an aperture (22) exposing a first set of photodetectors to light from a first range of directions and exposing a second set of photodetectors to light from a second range of directions, wherein the first range is different to the second range. An apparatus including such an integrated sensor chip package and a method of manufacturing such an integrated sensor chip package are also disclosed.

Abstract: An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.