Abstract: A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250° C. and 1100° C. with admission into the process chamber of diatomic reductant source gas Z-Z? where Z and Z? are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed <110> and <100> planes and a film residual stress associated with the film being formed at a temperature of less than 600° C. and having a <110> film thickness that exceeds a <100> film thickness on the <100> crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.

Abstract: A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant.

Abstract: The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.

Abstract: In one aspect, the present invention provides a method and apparatus configured to form dielectric films or layers at low temperature. In one embodiment dielectric films such as silicon nitride (SixNy) and silicon dioxide (SiO2) are deposited at temperatures equal to or below 550° C. In a further aspect of the present invention, a method and apparatus configured to provide cross flow injection of reactant gases is provided. In one embodiment, reactant gasses (such as a monomolecular precursor and NH3) flow into vertically positioned adjustable injectors that mix reactants prior to injection into the wafer region.

Abstract: An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes an injection system which provides for selectable injection of gases to the process chamber. The injection system comprises one or more elongated injection tubes having a plurality of injection ports or orifices distributed in the tubes for directing flow of reactant and other gases across the surface of each substrate. The elongated injection tubes are rotatable about an axis in 360 degrees.

Abstract: An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes a cross-flow liner to improve gas flow uniformity across the surface of each substrate. The cross-flow liner of the present invention includes a longitudinal bulging section to accommodate a cross-flow injection system. The liner is patterned and sized so that it is conformal to the wafer carrier, and as a result, reduces the gap between the liner and the wafer carrier to reduce or eliminate vortices and stagnation in the gap areas between the wafer carrier and the liner inner wall.

Abstract: A system and method of minimizing stress related to the ramp rate of a variable by limiting the ramp rate as a function of the current value of the variable is provided. More specifically, the present invention provides a system and method of maintaining the radial delta temperature of a semiconductor substrate or other heated body below the crystal slip curve by dynamically controlling the temperature ramp rate during processing.

Abstract: The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.

Abstract: A system and method of minimizing stress related to the ramp rate of a variable by limiting the ramp rate as a function of the current value of the variable is provided. More specifically, the present invention provides a system and method of maintaining the radial delta temperature of a semiconductor substrate or other heated body below the crystal slip curve by dynamically controlling the temperature ramp rate during processing.