Abstract: Embodiments of the disclosure include an electronic device comprising a first electrode, a second electrode, a first layer disposed between the first electrode and the second electrode, the first layer comprising a metal-halide perovskite material, and an adhesive layer disposed between the first layer and the second electrode, wherein the adhesive layer comprises an organic material. Embodiments of the disclosure generally relate to photovoltaic module products, such as photovoltaic cells, photovoltaic devices and photovoltaic modules that include an absorber layer that comprise a perovskite material. Embodiments of the disclosure include an improved perovskite solar cell architecture that includes one or more buffer layers disposed within the multilayer stack of thin films used to form a solar cell that can exhibit high solar cell performance, and provide stronger adhesion between adjacent layers and/or cohesion within a layer within the multilayer stack used to form the solar cell device.

Abstract: A method can comprise providing an ink comprising reactants, a complexing agent, and a solvent, depositing the ink onto a substrate to form a wet film, drying the wet film to form a precursor layer, and annealing the precursor layer to form a perovskite film. The reactants can comprise a first and a second cation, a first metal, and a first and a second anion, wherein the first and second cations are different from each other, and the first and second anions are different from each other. The complexing agent can comprise a heterocyclic donor material. The perovskite film can comprise a mixed-cation mixed-halide perovskite material, and less than 5% by mass of the complexing agent. The perovskite film can also be formed using a one-step process.

Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.

Abstract: A method can comprise providing an ink comprising reactants, a complexing agent, and a solvent, depositing the ink onto a substrate to form a wet film, drying the wet film to form a precursor layer, and annealing the precursor layer to form a perovskite film. The reactants can comprise a first and a second cation, a first metal, and a first and a second anion, wherein the first and second cations are different from each other, and the first and second anions are different from each other. The complexing agent can comprise a heterocyclic donor material. The perovskite film can comprise a mixed-cation mixed-halide perovskite material, and less than 5% by mass of the complexing agent. The perovskite film can also be formed using a one-step process.

Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.

Abstract: A 2-terminal multi-junction solar cell having a thin film of metal halide semiconductor as the top solar-cell material and crystalline silicon as the bottom solar-cell material. In the illustrative embodiment, the top solar-cell material is a perovskite of the form AM(IxH1-x)3, where A is a cation, preferably methylammonium (CH3NH3), formamidinium ([R2N—CH?NR2]+), or cesium; M is metal, preferably Pb, Sn, Ge; H is a halide, preferably Br or Cl; and x=iodine fraction, in the range of 0 to 1, inclusive. The integration of the two solar-cell materials is enabled by the use of a tunnel junction composed of indirect band-gap material.

Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.

Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.

Abstract: A 2-terminal multi-junction solar cell having a thin film of metal halide semiconductor as the top solar-cell material and crystalline silicon as the bottom solar-cell material. In the illustrative embodiment, the top solar-cell material is a perovskite of the form AM(IxH1-x)3, where A is a cation, preferably methylammonium (CH3NH3), formamidinium ([R2N—CH?NR2]+), or cesium; M is metal, preferably Pb, Sn, Ge; H is a halide, preferably Br or Cl; and x=iodine fraction, in the range of 0 to 1, inclusive. The integration of the two solar-cell materials is enabled by the use of a tunnel junction composed of indirect band-gap material.