Abstract: Methods and apparatus for protecting an inner wall of a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a gas sleeve generator including a gas sleeve generator comprising a body having a central opening disposed through the body; a plenum disposed within the body and surrounding the central opening; an inlet coupled to the plenum; and an annulus coupled at a first end to the plenum and forming an annular outlet at a second end opposite the first end, wherein the annular outlet is concentric with and open to the central opening. The gas sleeve generator may be disposed upstream of a foreline plasma abatement system to provide a sleeve of a gas to a foreline of a substrate processing system.

Abstract: Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a plasma source coupled to a foreline of a process chamber, a reagent source coupled to the foreline upstream of the plasma source, and a foreline gas injection kit coupled to the foreline to controllably deliver a gas to the foreline, wherein the foreline injection kit includes a pressure regulator to set a foreline gas delivery pressure setpoint, and a first pressure gauge coupled to monitor a delivery pressure of the gas upstream of the foreline.

Abstract: In some embodiments an apparatus for treating an exhaust gas in a foreline of a substrate processing system may include a dielectric tube configured to be coupled to the foreline of the substrate processing system to allow a flow of exhaust gases from the foreline through the dielectric tube; an RF coil wound about an outer surface of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube; a tap coupled to the RF coil to provide an RF return path, the tap disposed between the first end of the dielectric tube and a central portion of the dielectric tube.

Abstract: Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a plasma source coupled to a foreline of a process chamber, a reagent source coupled to the foreline upstream of the plasma source, and a foreline gas injection kit coupled to the foreline to controllably deliver a gas to the foreline, wherein the foreline injection kit includes a pressure regulator to set a foreline gas delivery pressure setpoint, and a first pressure gauge coupled to monitor a delivery pressure of the gas upstream of the foreline.

Abstract: Embodiments of an abatement apparatus are disclosed herein. In some embodiments, an abatement apparatus may include a scrubber configured to receive an effluent stream from a process chamber and further configured to remove first particles from the effluent stream; a scrubber conduit coupled to the scrubber to receive the effluent stream therefrom and configured to remove second particles from the effluent stream, the scrubber conduit having one or more inlets configured to provide a fluid to sufficiently wet an interior surface of the scrubber conduit to trap the second particles thereon and to wash the second particles therealong; and a central scrubber coupled to the scrubber via the scrubber conduit. In some embodiments, the scrubber conduit is downward sloping from the scrubber to the central scrubber. In some embodiments, a plurality of scrubbers may be coupled to the central scrubber via a plurality of scrubber conduits.

Abstract: A system for use with a plating cell configured to plate objects in a plating process. At least one byproduct is created in a plating substance used in the plating cell. The system includes a purification system configured to remove at least a portion of the at least one byproduct from the plating substance. The purification system comprises at least a first processing vessel, a second processing vessel, and a flow path providing flow from the first processing vessel to the second processing vessel. The flow path may be configured such that the flow from the first vessel to the second vessel is caused by gravity. A method is also provided for removing at least a portion of at least one byproduct from a plating substance used in a plating cell.

Abstract: A system is provided that includes a load lock apparatus having an interior configured to receive an object. At least one inlet valve may be flow coupled to the interior of the load lock apparatus, and at least one outlet valve may also be flow coupled to the interior of the load lock apparatus. A controller may be configured to selectively control opening and closing of the at least one inlet valve. The load lock apparatus may include an object receiving mechanism that is movable within the interior of the load lock apparatus to throttle the evacuation of the interior. Several methods of using the system and load lock apparatuses are also disclosed.

Abstract: A method and system are disclosed for plating objects. At least one aspect associated with the object plating is monitored to determine the amount of at least one byproduct created during the plating and/or the reduction in the amount of at least one plating component. Based on this monitored aspect, an adjustment is made to the flow rate of substances added to a plating cell and/or the flow rate of used plating substances drained from the plating cell. The used plating substances are purified to remove at least some of the byproduct and then the purified plating substances are combined with at least one component before passing back into the plating cell to reuse at least some of the plating substances. The method and system could be used during the plating of semiconductor wafers with copper.

Abstract: A system is provided that includes a load lock apparatus having an interior configured to receive an object. At least one inlet valve may be flow coupled to the interior of the load lock apparatus, and at least one outlet valve may also be flow coupled to the interior of the load lock apparatus. A controller may be configured to selectively control opening and closing of the at least one inlet valve. The load lock apparatus may include an object receiving mechanism that is movable within the interior of the load lock apparatus to throttle the evacuation of the interior. Several methods of using the system and load lock apparatuses are also disclosed.

Abstract: A method and system are disclosed for plating objects. At least one aspect associated with the object plating is monitored to determine the amount of at least one byproduct created during the plating and/or the reduction in the amount of at least one plating component. Based on this monitored aspect, an adjustment is made to the flow rate of substances added to a plating cell and/or the flow rate of used plating substances drained from the plating cell. The used plating substances are purified to remove at least some of the byproduct and then the purified plating substances are combined with at least one component before passing back into the plating cell to reuse at least some of the plating substances. The method and system could be used during the plating of semiconductor wafers with copper.

Abstract: A system for use with a plating cell configured to plate objects in a plating process. At least one byproduct is created in a plating substance used in the plating cell. The system includes a purification system configured to remove at least a portion of the at least one byproduct from the plating substance. The purification system comprises at least a first processing vessel, a second processing vessel, and a flow path providing flow from the first processing vessel to the second processing vessel. The flow path may be configured such that the flow from the first vessel to the second vessel is caused by gravity. A method is also provided for removing at least a portion of at least one byproduct from a plating substance used in a plating cell.

Abstract: A method and system are disclosed for plating objects. At least one aspect associated with the object plating is monitored to determine the amount of at least one byproduct created during the plating and/or the reduction in the amount of at least one plating component. Based on this monitored aspect, an adjustment is made to the flow rate of substances added to a plating cell and/or the flow rate of used plating substances drained from the plating cell. The used plating substances are purified to remove at least some of the byproduct and then the purified plating substances are combined with at least one component before passing back into the plating cell to reuse at least some of the plating substances. The method and system could be used during the plating of semiconductor wafers with copper.